HIGH CURRENT P-CHANNEL ENHANCEMENT MOSFET MODULE Search Results

LC32020

Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Contextual Info: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING

15A POWER TRANSISTOR FOR SMPS

Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Contextual Info: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch

Contextual Info: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 5 1 .0 5 7 .0 2 8 .0 1 0 .0 T Y P ø 4 .2 5 2 P O S N FEATURES 7 .0 • P - CHANNEL POWER MOSFETS 6 .3 5 T Y P • N - CHANNEL POWER MOSFETS

depletion mode mosfet

Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a

transistor c1237

Abstract: TSD250N05V
Contextual Info: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250

Contextual Info: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n

schematic diagram UPS

Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Contextual Info: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS

TSD40N50DV

Abstract: aval d 317 transistor
Contextual Info: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH

Contextual Info: June 1997 Micro Linear ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p f ° r processors such as the Pentium Pro and Pentium

2MI50S-050

Contextual Info: 2M I50S-050 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET MOS-FET MODULE • Features lOutline Drawings • Low on-resistance • High current • Insulated to elements and metal base • Separated two-elements ■Applications • High frequency power supplies

SD 1496 transistor

Abstract: TSD2M350F
Contextual Info: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE

MG400H1FL1

Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Contextual Info: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran­ sistors, voltage between terminals, power dissi­ pation, junction temperature, storage tempera­ ture, etc. These characteristics are all closely

Contextual Info: ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium II from Intel®.

Contextual Info: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE

TSD200N05V

Abstract: schematic diagram UPS TSD200N05F smps&ups
Contextual Info: JIO E^ D • 7 ^ 2 3 7 J303QbQ0 ''T ^ S ■ TSD200N05F TSD200N05V SGS-THOMSON ItLIKglMKS s "15 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE G s-th o m so n ADVANCE DATA TYPE T S D 200N 05F /V V R dss 50 V d s o i I Id 0.006 n 200 A ■ VERY HIGH DENSITY POWER MOS

TSD22N80V

Abstract: TSD22N80F transistor b 1185 STH8N80
Contextual Info: 3GE D • 7=12^537 QDBQSTM 3 TSD22N80F TSD22N80V SCS-THOMSON M G»Li D¥iiMa<gS s g s-thom son N _ CHANNEL ENHANCEMENT MODE _POWER MQS TRANSISTOR MODULE ADVANCE DATA TYPE V dss RDS(on Id T S D 22N 80F/V 800 V 0.4 n 22 A ■ HIGH VOLTAGE, HIGH CURRENT POWER

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

ba102

Abstract: IRFP150 TSD4M150F TSD4M150V T-39-15 sc0305
Contextual Info: S G ~ S - T H OMS ON 3DE » • 7^51537 DD3DS3Ö 4 TSD4M150F TSD4M150V SGS-THOMSON pBv;S IQÄ1Tß»D gS N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS(on Id TS D 4M 150F/V 100 V 0.014 0 135 A . ■ ■ . « . ■ ■ HIGH CURRENT POWER MOS MODULE

Contextual Info: 3QE D • 7 ^ 5 3 7 QQ3074Q T ■ £Z7 SGS-THOMSON Ä 7# [* ^ « [IO T a [* S IR F K 4 H 4 5 0 s g s - thomson" N - CHANNEL ENHANCEMENT MODE -POWER MOS TRANSISTOR MODULE TYPE IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A ■ . « . HIGH CURRENT POWER MOS MODULE

Contextual Info: 3DE D H Z ! B TESTES? D Q 3 D 7S D 2 • ._ ^ 1 S G S - T H O M S O N A 7 I [»^ [¡[LICTliMDOS s 6 - IRFK6H350 N - CHANNEL ENHANCEMENT MODE - POWER MOS TRANSISTOR MODULE S - T H OM S ON ADVANCE DATA TYPE IR FK6H 350 V dss RDS on

TSD5MG40V

Abstract: STHV102 TSD5MG40F sthv QG30S
Contextual Info: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE

transistor j237

Abstract: d 317 transistor
Contextual Info: 3DE ]> • 7^2^237 0030748 4 ■ ' T / 3 CM S 7 SGS-THOMSON ^ 7# IR F K 6 H 2 5 0 ^ s_ t h o m s o n N _ CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR FK 6H 250 V dss RDS{on Id 200 V 0.015 o 140 A . . . ■ _

Contextual Info: <Silicon RF Power Modules > RA55H3340M RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the