LC32020
Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING
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LC32016
LC32020
LC32016
LC32020
power mosfet module
n-channel 500w power mosfet
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15A POWER TRANSISTOR FOR SMPS
Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch
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FAN7031,
FAN7023,
FAN7005
FIN7216-01
FAN7556
FAN7601
FSA3357
QVE00033
Power247TM,
15A POWER TRANSISTOR FOR SMPS
list of n channel power mosfet
FQPF*10n20c
detailed vfd circuit diagram for motor
FAN7601 application data
list of P channel power mosfet
80a charger transformer
dual Phototransistor mouse
FQPF10N20C
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Untitled
Abstract: No abstract text available
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 5 1 .0 5 7 .0 2 8 .0 1 0 .0 T Y P ø 4 .2 5 2 P O S N FEATURES 7 .0 • P - CHANNEL POWER MOSFETS 6 .3 5 T Y P • N - CHANNEL POWER MOSFETS
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LC32016
LC32020
300ms
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depletion mode mosfet
Abstract: No abstract text available
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a
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ISOPLUS220TM
ISOPLUS220
depletion mode mosfet
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transistor c1237
Abstract: TSD250N05V
Text: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250
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c1237
Q03QLi02
TSD250N05F
TSD250N05V
TSD250N05F/V
O-240)
PC-029«
transistor c1237
TSD250N05V
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Untitled
Abstract: No abstract text available
Text: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n
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003QSC
TSD20N1
TSD20N100V
TSD20N100F/V
O-240)
PC-029«
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PDF
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schematic diagram UPS
Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS
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TSD180N1
TSD180N1OV
TSD180N10F/V
C045S0
T-91-20
O-240)
schematic diagram UPS
TSD180N10V
k 815 MOSFET
smps&ups
TSD180N10F
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TSD40N50DV
Abstract: aval d 317 transistor
Text: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH
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TSD40N50DF
TSD40N50DV
O-240)
PC-029«
TSD40N50DV
aval
d 317 transistor
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Untitled
Abstract: No abstract text available
Text: June 1997 Micro Linear ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p f ° r processors such as the Pentium Pro and Pentium
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ML4902
100mV
L4902CT
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2MI50S-050
Abstract: No abstract text available
Text: 2M I50S-050 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET MOS-FET MODULE • Features lOutline Drawings • Low on-resistance • High current • Insulated to elements and metal base • Separated two-elements ■Applications • High frequency power supplies
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2MI50S-050
2MI50S-050
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SD 1496 transistor
Abstract: TSD2M350F
Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE
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QG3D534
TSD2M350F
TSD2M350V
TSD2M350F/V
T-91-20
O-240)
PC-029«
SD 1496 transistor
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MG400H1FL1
Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Text: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran sistors, voltage between terminals, power dissi pation, junction temperature, storage tempera ture, etc. These characteristics are all closely
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Untitled
Abstract: No abstract text available
Text: ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium II from Intel®.
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ML4902
ML4902
10OmV
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Untitled
Abstract: No abstract text available
Text: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE
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IRFK6H450
SCM720
O-240)
PC-029«
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TSD200N05V
Abstract: schematic diagram UPS TSD200N05F smps&ups
Text: JIO E^ D • 7 ^ 2 3 7 J303QbQ0 ''T ^ S ■ TSD200N05F TSD200N05V SGS-THOMSON ItLIKglMKS s "15 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE G s-th o m so n ADVANCE DATA TYPE T S D 200N 05F /V V R dss 50 V d s o i I Id 0.006 n 200 A ■ VERY HIGH DENSITY POWER MOS
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m330bQG
TSD200N05F
TSD200N05V
TSD200N05F/V
T-91-20
O-240)
TSD200N05V
schematic diagram UPS
TSD200N05F
smps&ups
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TSD22N80V
Abstract: TSD22N80F transistor b 1185 STH8N80
Text: 3GE D • 7=12^537 QDBQSTM 3 TSD22N80F TSD22N80V SCS-THOMSON M G»Li D¥iiMa<gS s g s-thom son N _ CHANNEL ENHANCEMENT MODE _POWER MQS TRANSISTOR MODULE ADVANCE DATA TYPE V dss RDS(on Id T S D 22N 80F/V 800 V 0.4 n 22 A ■ HIGH VOLTAGE, HIGH CURRENT POWER
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TSD22N80F
TSD22N80V
TSD22N80F/V
STH8N80
T-91-20
O-240)
TSD22N80V
TSD22N80F
transistor b 1185
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pt 4115 led driver
Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
KM4211-PB:
KM4211
FAN5231-PB:
pt 4115 led driver
AN-7527
an7527
an5043
AN-7501
AN-7502
AN42045
transistor k 4110
PC100 NPN
ML4425
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Untitled
Abstract: No abstract text available
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
900MHz
1800MHz
900mV
MC33170
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ba102
Abstract: IRFP150 TSD4M150F TSD4M150V T-39-15 sc0305
Text: S G ~ S - T H OMS ON 3DE » • 7^51537 DD3DS3Ö 4 TSD4M150F TSD4M150V SGS-THOMSON pBv;S IQÄ1Tß»D gS N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS(on Id TS D 4M 150F/V 100 V 0.014 0 135 A . ■ ■ . « . ■ ■ HIGH CURRENT POWER MOS MODULE
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TSD4M150F
TSD4M150V
TSD4M150F/V
IRFP150
TSD4M150V
T-91-20
O-240)
ba102
TSD4M150F
T-39-15
sc0305
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7 ^ 5 3 7 QQ3074Q T ■ £Z7 SGS-THOMSON Ä 7# [* ^ « [IO T a [* S IR F K 4 H 4 5 0 s g s - thomson" N - CHANNEL ENHANCEMENT MODE -POWER MOS TRANSISTOR MODULE TYPE IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A ■ . « . HIGH CURRENT POWER MOS MODULE
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3074Q
IRFK4H450
T-91-20
O-240)
PC-029«
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Untitled
Abstract: No abstract text available
Text: 3DE D H Z ! B TESTES? D Q 3 D 7S D 2 • ._ ^ 1 S G S - T H O M S O N A 7 I [»^ [¡[LICTliMDOS s 6 - IRFK6H350 N - CHANNEL ENHANCEMENT MODE - POWER MOS TRANSISTOR MODULE S - T H OM S ON ADVANCE DATA TYPE IR FK6H 350 V dss RDS on
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IRFK6H350
T-91-20
O-240)
PC-029«
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TSD5MG40V
Abstract: STHV102 TSD5MG40F sthv QG30S
Text: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE
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TSD5MG40F
TSD5MG40V
TSD5MG40F/V
STHV102
TSD5MG40V
T-91-20
O-240)
TSD5MG40F
sthv
QG30S
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transistor j237
Abstract: d 317 transistor
Text: 3DE ]> • 7^2^237 0030748 4 ■ ' T / 3 CM S 7 SGS-THOMSON ^ 7# IR F K 6 H 2 5 0 ^ s_ t h o m s o n N _ CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR FK 6H 250 V dss RDS{on Id 200 V 0.015 o 140 A . . . ■ _
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SC04720
O-240)
PC-029«
transistor j237
d 317 transistor
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H3340M RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the
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RA55H3340M
330-400MHz
RA55H3340M
55-watt
400-MHz
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