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Rochester Electronics LLC HGTG12N60D1D UFS SERIES N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG12N60D1D	Bulk			44	1 - 10 - 100 $6.85 1000 $6.85 10000 $6.85	Buy Now
Harris Semiconductor HGTG12N60D1D
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Bristol Electronics	HGTG12N60D1D		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	HGTG12N60D1D		606		1	1 $6.59 10 $6.59 100 $6.19 1000 $5.6 10000 $5.6	Buy Now

HGTG12N60D1D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HGTG12N60D1D		Harris Semiconductor	12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode		Original	PDF
HGTG12N60D1D		Intersil	12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode		Original	PDF

HGTG12N60D1D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G12N60D1D Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D Text: HGTG12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss	Original	HGTG12N60D1D O-247 500ns 150oC. G12N60D1D G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D	PDF
G12N60D1 Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60 Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE	Original	HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60	PDF
Untitled Abstract: No abstract text available Text: HGTG12N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)21 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.	Original	HGTG12N60D1D delay100nÃ time150nÃ time600n	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
Untitled Abstract: No abstract text available Text: HARRIS SEMICOND 33 h SECTOR a r bflE D • M3G2271 0050271 201 ■ ¡ H A S HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 12 Amp, 600 Volt • Latch Free Operation	OCR Scan	M3G2271 HGTG12N60D1D O-247 500ns	PDF
12N60D1D Abstract: 12n60d1 Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description	OCR Scan	HGTG12N60D1D 500ns 12N60D1D 12n60d1	PDF
HGTH20N40E1D Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS	OCR Scan	O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide	PDF
igbt 400V 20A Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .	OCR Scan	HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V	PDF
TRANSISTOR BIPOLAR 400V 20A Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .	OCR Scan	HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT	PDF
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40	PDF