HFE-75 TRANSISTOR Search Results

HFE-75 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

HFE-75 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BD291 Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035 Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22	Original	DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035	PDF
all transistor Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-24 I _INSULATED TYPE j QM50TB-24 Collector current. BOA Vcex Collector-emitter voltage. 1200V hFE DC current gain. 75 Insulated Type	OCR Scan	QM50TB-24 E80276 E80271 all transistor	PDF
Mitsubishi transistor Abstract: 53c300 QM15 QM150E Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150E2Y/E3Y-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150E2Y/E3Y-HK Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain. 75	OCR Scan	QM150E2Y/E3Y-HK E80276 E80271 Mitsubishi transistor 53c300 QM15 QM150E	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM30HA-H E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-HK lc Collector current. 150A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM150DY-HK E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-H Ic Collector current. 15A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM15TD-H E80276 E80271	PDF
QM50DY-H Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM50DY-H E80276 E80271 QM50DY-H	PDF
Contextual Info: f MITSUBISHI TRANSISTOR MODULES j QM400HA-24 ! HIGH POWER SWITCHING USE [ _INSULATED TYPE f QM400HA-24 Collector current. 400A Collector-emitter voltage.1200V • hFE DC current gain.75	OCR Scan	QM400HA-24 E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM50HA-H E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50CY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM50CY-H E80276 E80271	PDF
QM20TD-H Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM20TD-H E80276 E80271 QM20TD-H	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20DX-H Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM20DX-H E80276 E80271	PDF
QM600HA-24 Abstract: 3102A qm600ha-2 qm600 qm600H Contextual Info: MITSUBISHI TRANSISTOR MODULES QM600HA-24K HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-24K • lc • Vcex Collector current. 600A Collector-emitter voltage.1200V • hFE DC current gain.75	OCR Scan	QM600HA-24K QM600HA-24 3102A qm600ha-2 qm600 qm600H	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM1OODY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM1 OODY-HK Ic Collector current. 100A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	E80276 E80271 QM100DY-HK	PDF

Mitsubishi QM50DY-H Abstract: qm50dy-h Contextual Info: MITSUBISHI TRANSISTOR MODULES s QM50DY-H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QMSODY-H • lc Collector current. 50A Collector-emitter voltage. 600V • hFE DC current gain.75	OCR Scan	QM50DY-H E80276 E80271 Mitsubishi QM50DY-H qm50dy-h	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2H Collector current. 15A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM15TB-2H E80276 E80271	PDF
2N3906 EBC Abstract: 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MIN 5.0 ICES ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff 2N2712 NPN AMPL/SWITCH ECB	Original	2N2712 2N2714 2N2923 2N2924 PN5828 PN5910 PN6010 2N3906 EBC 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent	PDF
QM30DY-2H Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type	OCR Scan	QM30DY-2H E80276 E80271 QM30DY-2H	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H lc Collector current. 150A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM150CY-H E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM50DY-2H E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type	OCR Scan	QM30CY-H 30CY-H E80276 E80271	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H Ic Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM100HY-2H E80276 E80271	PDF
QM10 Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75	OCR Scan	QM100HY-2H E80276 E80271 Tj-25 QM10	PDF
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2H lc Collector current. 75A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM75DY-2H E80276 E80271	PDF

HFE-75 TRANSISTOR Search Results

HFE-75 TRANSISTOR Result Highlights (5)

HFE-75 TRANSISTOR Datasheets Context Search

BD291

all transistor

Mitsubishi transistor

QM50DY-H

QM20TD-H

QM600HA-24

Mitsubishi QM50DY-H

2N3906 EBC

QM30DY-2H

QM10