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    HFE TRANSISTOR 200 Search Results

    HFE TRANSISTOR 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    HFE TRANSISTOR 200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HN3C51F

    Abstract: MARKING L toshiba TRANSISTOR 015G hn3c51 015G
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN3C51F HN3C51F MARKING L toshiba TRANSISTOR 015G hn3c51 015G PDF

    HN4A51J

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A51J -120V HN4A51J PDF

    hn3a51f

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN3A51F -120V hn3a51f PDF

    HN4C51J

    Abstract: No abstract text available
    Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C51J HN4C51J PDF

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J PDF

    HN4A06J

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A06J -120V HN4A06J PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		2SC2712 150mA 2SC2712G-x-AE3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 OT-23/SOT-323 2SC2712-Y PDF

    2SC2712-G R

    Abstract: 2SC2712 TRANSISTOR BL 100 2SC2712-Y 2SC2712G 2SC2712-G 2SC2712L 2SC2712Y IC150 transistor 5 gr
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


    Original     		2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712-x-AE3-R 2SC2712-x-AL3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712-G R 2SC2712 TRANSISTOR BL 100 2SC2712-Y 2SC2712G 2SC2712-G 2SC2712L 2SC2712Y IC150 transistor 5 gr PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		2SC2712 150mA 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 PDF

    2SC2712

    Abstract: 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 3 FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		2SC2712 150mA OT-23 2SC2712L 2SC2712-x-AE3-R 2SC2712L-x-AE3-R QW-R206-029 2SC2712 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y PDF

    2SC2712

    Abstract: 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		2SC2712 150mA 2SC2712L 2SC2712G 2SC2712-x-AE3-R 2SC2712-x-AL3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr PDF

    2sc2712

    Abstract: C 029 Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


    Original     		2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA1517S -120V. KTC3911S. -120V, -10mA, PDF

    HN4C06J

    Abstract: HN4C06
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J 150oducts HN4C06J HN4C06 PDF

    HN4C06J

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J HN4C06J PDF

    Untitled

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A06J -120V PDF

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN3C51F PDF

    HN3C51F

    Abstract: No abstract text available
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN3C51F HN3C51F PDF

    HN3A51F

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN3A51F -120V HN3A51F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C51J PDF

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J PDF

    Marking 34-Q1

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A51J -120V Marking 34-Q1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		2SC2713 2SA1163 PDF