HFA08TB60 DIODE Search Results

Contextual Info: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47

HFA08TB60

Abstract: HFA08TB60 DIODE
Contextual Info: PD -2.341 International lO R Rectifier HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions Benefits

Contextual Info: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47

HFA08TB60

Abstract: IRFP250
Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

Contextual Info: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

HFA08TB60

Abstract: IRFP250
Contextual Info: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA08TB60

Abstract: IRFP250
Contextual Info: PD -2.341 HFA08TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

HFA08TB60

Abstract: ULTRAFAST RECTIFIER 16A 600V vf 1.7 IRFP250
Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

lrr3

Contextual Info: P D -2 .3 4 1 International US Rectifier HEXFRED Provisional Data Sheet HFA08TB60 600V, 8A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Units Characteristics Vr VRRM 600 V IF AV 8 A trr (typ) 18 ns Qrr (typ) 65 nC IRRM 5 A di(rec)M/dt (typ)

Contextual Info: P D -2.341 International Rectifier I R HFA HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • 08 T B 60 VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low I r r m Very L ow Q rr Guaranteed Avalanche Specified at Operating Conditions

Contextual Info: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

transistor tip 1050

Abstract: smd transistor B1 TRANSISTOR SMD 2X y EIA-481A HFA08TB60 SMD-220 SMD TRANSISTOR MARKING l4 D9919
Contextual Info: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

HFA08TB60

Abstract: IRFP250
Contextual Info: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

Contextual Info: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

a06t

Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

MT5C1008DCJ-45/SMD a06t transistor

Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

a06t

Abstract: hfa08tb60pbf
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

20337

Abstract: SMD e9
Contextual Info: 111! n a n I n t e r n a t i o n a l R e c t if ie r UltraFast Recovery Diodes Put Number VRWM V 10BF10 10BF20 10BF40 10BF60 10BF80 100 200 400 600 800 1 1 1 1 1 30BF10 30BF20 30BF40 30BF60 30BF80 100 200 400 600 800 3 3 3 3 3 (6) IfSMOiOHi (A) VFM lF(AV)

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

Contextual Info: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •

HFA16TA120C

Abstract: HF30A060ACD HFA16PB120 IR210 ir485 HF10A060ACD
Contextual Info: ¡Ill usas I n t e r n a t io n a l R e c t if ie r Die Tables and Outlines HEXFRED Die w > M i Part Number Die{2) Part Number Die Size N/A 6 HF06A060ACB Length/Side in.) mm "C x 0" (in.) mm Anode MetaKzation Quantity Tray (0.066x0.066)1.68x1.68 (0.037x0.037) 0.94x0.94