HFA08TB60 Search Results

Contextual Info: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

HFA08TB60S

Abstract: IRFP250
Contextual Info: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode + 2 N/C 1 3 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

HFA08TB60

Abstract: IRFP250
Contextual Info: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

a06t

Abstract: hfa08tb60pbf
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

HFA08TB60

Abstract: IRFP250
Contextual Info: PD -2.341 HFA08TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: HFA08TB60S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode + 2 N/C 1 3 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

HFA08TB60

Abstract: 81 221
Contextual Info: HFA08TB60 Conforms to JEDEC Outline TO-220AC Dimensions in millimeters and inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

lrr3

Contextual Info: P D -2 .3 4 1 International US Rectifier HEXFRED Provisional Data Sheet HFA08TB60 600V, 8A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Units Characteristics Vr VRRM 600 V IF AV 8 A trr (typ) 18 ns Qrr (typ) 65 nC IRRM 5 A di(rec)M/dt (typ)

Contextual Info: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified • Material categorization:

Contextual Info: International I R Rectifier HEXFRED1 Preliminary Data Sheet PD -2.607 03/98 HFA08TB60S Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very L o w I rrm Very Low Q rr Guaranteed Avalanche Specified at Operating Conditions

94047

Contextual Info: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •

smd transistor b3

Contextual Info: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

transistor 20607

Contextual Info: Bulletin PD -20607 rev. B 12/00 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VR = 600V VF typ. * = 1.4V IF(AV) = 8.0A Qrr (typ.)= 65nC

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

hfa06tb120

Abstract: HFA16PB120 HFA180MD60C
Contextual Info: International Rectifier HEXFRED HEXFRED V RRM Part Number V I FAV @ T C per pkg. (A) (C) V @I FM FM (A) IR @ VRWM (µA) Max I RRM (A) Max t rr (mA) R Θ JC per pkg. (°C/W) Notes Fax-on-Demand Discrete D2Pak HFA04TB60S HFA08TA60CS HFA08TB60S HFA15TB60S

HFA08TB60

Abstract: ULTRAFAST RECTIFIER 16A 600V vf 1.7 IRFP250
Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

Contextual Info: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode + 2 N/C 1 3 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

KU 607

Abstract: TRANSISTOR SMD MARKING CODE 451 smd TRANSISTOR code marking 2F diode SMD MARKING CODE 607 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM HFA08TB60S IRFP250 2607 transistor
Contextual Info: Preliminary Data Sheet PD -2.607 03/98 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI

Contextual Info: VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified meets JESD 201 class 2 whisker test 2 • Material categorization:

HFA08TB60

Abstract: IRFP250
Contextual Info: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A

Contextual Info: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •

transistor 20607

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
Contextual Info: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits