HF SSB APPLICATIONS RF 28 V Search Results

HF SSB APPLICATIONS RF 28 V Result Highlights (5)

Part	Manufacturer	Description
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU

HF SSB APPLICATIONS RF 28 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MS1226 Contextual Info: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device	Original	MS1226 MS1226	PDF
Contextual Info: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device	Original	MS1226 MS1226 RTH00	PDF
HF SSB APPLICATIONS RF 28 v Abstract: j192 Contextual Info: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This	Original	MS1076 MS1076 HF SSB APPLICATIONS RF 28 v j192	PDF
7048 Abstract: MS1076 Contextual Info: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This	Original	MS1076 MS1076 053-7048IC 7048	PDF
SD1730 Abstract: Planar choke TH560 choke C20 C24 Contextual Info: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING	Original	SD1730 TH560) -30dB TH560 SD1730 35ise Planar choke TH560 choke C20 C24	PDF
choke coil Abstract: SD1729 TH416 Contextual Info: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION	Original	SD1729 TH416) TH416 SD1729 choke coil TH416	PDF
SD1729 Abstract: TH416 88nF Contextual Info: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION	Original	SD1729 TH416) TH416 SD1729 TH416 88nF	PDF
Contextual Info: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This	Original	MS1076 MS1076	PDF
SD1730 Abstract: TH560 arco Contextual Info: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING	Original	SD1730 TH560) -30dB TH560 SD1730 TH560 arco	PDF
Contextual Info: SGS-THOMSON SD1729 TH416 IILG RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . OPTIMIZED FOR SSB . 30 MHz . 28 VOLTS • IMD -3 0 dB . COMMON EMITTER . GOLD METALLIZATION ■ P o u t = 130 W P E P WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon	OCR Scan	SD1729 TH416) SD1729 D070704	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization	Original	MS1078 MS1078	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1077 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization	Original	MS1077 MS1077	PDF
HF SSB APPLICATIONS Abstract: MS1078 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization	Original	MS1078 MS1078 HF SSB APPLICATIONS	PDF
TH416 Abstract: SD1729 Contextual Info: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon	Original	SD1729 TH416) SD1729 TH416	PDF

TH560 Contextual Info: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN	Original	SD1730 TH560) SD1730 TH560	PDF
Contextual Info: SGS-THOMSON SD1224-10 m RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS 30 MHz 28 VOLTS IMD -2 8 dB COMMON EMITTER GOLD METALLIZATION P OUT = 30 W MIN. WITH 18 dB GAIN PIN CONNECTION 4/ 1 \ Q A DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com	OCR Scan	SD1224-10 SD1224-10	PDF
MS1076 Contextual Info: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor	Original	MS1076 MS1076	PDF
Contextual Info: /T T ^ 7 / S G S -T H O M S O N SD1730 TH560 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD -30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN	OCR Scan	SD1730 TH560) -30dB SD1730	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	MS1226 MS1226	PDF
MS1226 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	MS1226 MS1226 MSC0943	PDF
S904 Abstract: 1729T TH416 Contextual Info: f Z 7 SGS-THOMSON * 7# . KM @ [j[L[i TE»n© §_ SD 1729 TH 416 RF & MICROWAVE TRANSISTO RS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION P out = 130 W PEP WITH 12 dB GAIN	OCR Scan	SD1729 S904 1729T TH416	PDF
SD1407 Abstract: VK-200 arco 463 Contextual Info: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar	Original	SD1407 SD1407 VK-200 arco 463	PDF
SD1407 Abstract: vk200 VK-200 m174 5004LFL Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar	Original	SD1407 SD1407 SD14thout vk200 VK-200 m174 5004LFL	PDF
SD1407 Abstract: vk200 VK-200 vk 200 SD140 Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar	Original	SD1407 SD1407 vk200 VK-200 vk 200 SD140	PDF

HF SSB APPLICATIONS RF 28 V Search Results

HF SSB APPLICATIONS RF 28 V Result Highlights (5)

HF SSB APPLICATIONS RF 28 V Datasheets Context Search

MS1226

HF SSB APPLICATIONS RF 28 v

7048

SD1730

choke coil

SD1729

SD1730

HF SSB APPLICATIONS

TH416

TH560

MS1076

MS1226

S904

SD1407

SD1407

SD1407