thermistor ntc
Abstract: E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB
Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)
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50MT060WHTAPbF
E78996
2002/95/EC
11-Mar-11
thermistor ntc
E78996 bridge
UPS circuit diagram pcb
50mt060whta
50MT060WHTAPB
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Untitled
Abstract: No abstract text available
Text: CPV364M4FPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for medium speed 1 to 10 kHz
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CPV364M4FPbF
11-Mar-11
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transistor SMD MARKING CODE HF
Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A
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PD-96036
HFA06TB120SPbF.
116nC
HFA06TB120S
O-220
transistor SMD MARKING CODE HF
smd code HF transistor
TRANSISTOR SMD MARKING CODE WT
AAAA series SMD transistor
smd code HF diode
TRANSISTOR SMD MARKING CODE X D
AAAA
transistor smd code marking tm
SMD MARKING CODE transistor WW
marking code dt2 transistor
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dm 465
Abstract: HFA135NH40 IRFP250 NC4000
Text: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. = 1V IF(AV) = 135A
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HFA135NH40
290nC
dm 465
HFA135NH40
IRFP250
NC4000
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HFA08PB120
Abstract: IRFP250
Text: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08PB120
140nC
O-247AC
HFA08PB120
IRFP250
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HFA140NJ60D
Abstract: IRFP250
Text: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC
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HFA140NJ60D
340nC
HFA140NJ60D
IRFP250
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HFA06TB120
Abstract: IRFP250 transistor D207
Text: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC
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HFA06TB120
116nC
O-220AC
HFA06TB120
IRFP250
transistor D207
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irm 1838
Abstract: HFA30PB120 IR 1838 OZ 9936 transistor D207 IRFP250
Text: Preliminary Data Sheet PD-2.604 rev. A 12/00 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.4V
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HFA30PB120
490nC
HFA30PB120
irm 1838
IR 1838
OZ 9936
transistor D207
IRFP250
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400uH
Abstract: GB35XF120K
Text: Bulletin PD - 94570 rev.B 08/03 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB35XF120K
E78996
400uH
GB35XF120K
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Untitled
Abstract: No abstract text available
Text: VS-HFA140FA60 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 140 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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VS-HFA140FA60
E78996
OT-227
VS-HFA140FA60
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see
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VS-HFA180NH40PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AAAA series SMD transistor
Abstract: No abstract text available
Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2
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PD-20603
HFA08TB120S
140nC
HFA08TB120S
08-Mar-07
AAAA series SMD transistor
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Untitled
Abstract: No abstract text available
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: VS-VSKDU162/12PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC® package • Simplified mechanical designs, rapid assembly • High surge capability
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VS-VSKDU162/12PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GB05XP120KTPBF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21116
HFA210NJ60CPbF
08-Mar-07
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PD245
Abstract: No abstract text available
Text: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. = 1V
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HFA240NJ40C
290nC
08-Mar-07
PD245
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motor IG 2200 19 X 000 15 R
Abstract: No abstract text available
Text: PD -5040 CPV364M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz
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CPV364M4F
360Vdc,
08-Mar-07
motor IG 2200 19 X 000 15 R
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Untitled
Abstract: No abstract text available
Text: HFA30TA60CS Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA30TA60CS
HFA30TA60CS
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Bulletin I27143 Rev.B 07/03 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features Gen. 4 Warp Speed IGBT Technology HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
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I27143
25MT060WF
E78996
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -5038 CPV363M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz
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CPV363M4F
360Vdc,
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -5.046 CPV362M4F IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz See Fig. 1 for Current vs. Frequency curve
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CPV362M4F
360Vdc,
08-Mar-07
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HFA45HI120C
Abstract: No abstract text available
Text: International I R Rectifier HEXFRED P D -2 .3 7 5 Provisional Data Sheet HFA45HI120C u l t r a fa s t, s o f t r e c o v e r y d io d e Features: Major Ratings and Characteristics Units Characteristics V br per leg lF(AV) 1200V, 28A 1200 V 28 A trr (per leg)
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HFA45HI120C
O-259AA
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HFA45HC60C
Abstract: transistor k31
Text: PD-2.368 International US Rectifier_ HEXFRED Provisional Data Sheet HFA45HC60C 600V, 45A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Units Vbr per leg 600 V lF(AV) 45* A trr (Per leg) 75 ns Qrr (per leg) 375 nC
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HFA45HC60C
00A/J1S,
00A/pS,
O-258AA
transistor k31
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