HEX GATE OR AND Search Results

14572U

Contextual Info: H D 14572U B Hex Gate 4 - ln v e r e r 2 - i n p u t NOR Gate 2 - i n p u t N A N D Gate The HD14572UB hex functional gate finds primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.

MC14572UBCPG

Abstract: MC14572UB MC14572UBCP MC14572UBD MC14572UBDG MC14572UBDR2 MC14572UBDR2G MC14572UBF 14572ubg
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

14572U

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

MC14572UB

Abstract: MC14572UBCP MC14572UBD MC14572UBDR2 MC14572UBF MC14572UBFEL 14572U
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

MC14572U

Abstract: 14572ubg
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

135VDC

Abstract: MC14572UBCP MC14572UB MC14572UBD MC14572UBDR2 MC14572UBF MC14572UBFEL 14572U
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

MC14572

Abstract: MC14572UB MC14572UBCP MC14572UBCPG MC14572UBD MC14572UBDG MC14572UBDR2 MC14572UBDR2G MC14572UBF 14572u
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

14572u

Abstract: MC14572UB
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

MC14572UB

Abstract: MC14572UBCP MC14572UBD MC14572UBDR2 MC14572UBF MC14572UBFEL 14572U
Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

cd 40118

Abstract: ci 4081 DV4001 4069UB dv408
Contextual Info: AVG Semiconductors DDi Technical Data DV4069UB Available Q2. 1995 Quad 2-Input NOR NAND Gate Dual 4-Input NOR (NAND) Gate Triple 3-Input NOR (NAND) Gate Quad 2-Input OR (AND) Gate Hex Inverter Gate (unbuffered) DV4001B DV4002B DV4025B DV4071B DV4069UB

Contextual Info: AVG Semiconductors DDiT Technical Data D V4069U B A vailable Q2, 1995 Quad 2-Input NOR NAND Gate Dual 4-Input NOR (NAND) Gate Triple 3-Input NOR (NAND) Gate Quad 2-Input OR (AND) Gate Hex Inverter Gate (unbuffered) DV4001B DV4002B DV4025B DV4071B DV4069UB

serial number of idm

Abstract: HIP0061 HIP0063 HIP0063AB MS-013-AE
Contextual Info: HIP0063 PRELIMINARY Hex Low Side MOSFET Driver with Serial or Parallel Interface and Diagnostic Fault Control October 1995 Features Description • Six Channel MOSFET Driver with Gate Drive Control by Serial SPI or Parallel Interface and an Option for PWM Logic Switching Control

HIP0061

Abstract: HIP0063 HIP0063AB MS-013-AE 4009 NOT GATE IC 4009 not gate 4009 NOT GATE IC power supply pin driver injectors peak and hold
Contextual Info: HIP0063 TM PRELIMINARY Hex Low Side MOSFET Driver with Serial or Parallel Interface and Diagnostic Fault Control October 1995 Features Description • Six Channel MOSFET Driver with Gate Drive Control by Serial SPI or Parallel Interface and an Option for PWM Logic Switching Control

NTE4511B

Abstract: Q32B NTE4501 NTE4518B NTE4520B NTE4508B NTE4510B NTE4512B NTE4514B NTE4516B
Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4501 16 -L e a d DI P, See D iag. 249 Dual 4 -In p u t N AND Gate, 2 -In p u t NOR/OR Gate, 8 -In p u t AN D/NAN D Gate NTE4502B 1 6-L e a d DIP, See Dlag. 249 Strobed Hex Inverter/Buffer N TE4503B

Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4501 1 6 -L e a d DIP, See Diag. 249 Dual 4 -In p u t N AND Gate, 2 -In p u t NOR/OR Gate, 8 -In p u t A N D/NAN D Gate NTE4502B 16 -L e a d DIP, See Dlag. 249 Strobed Hex Inverter/Buffer N TE4503B

HIP0061

Abstract: HIP0063 HIP0063AB MS-013-AE
Contextual Info: HIP0063 S E M I C O N D U C T O R PRELIMINARY Hex Low Side MOSFET Driver with Serial or Parallel Interface and Diagnostic Fault Control October 1995 Features Description • Six Channel MOSFET Driver with Gate Drive Control by Serial SPI or Parallel Interface and

DM54L04J

Abstract: block diagram of AND gate C1995 DM54L04 DM54L04W J14A W14B
Contextual Info: DM54L04 Hex Inverting Gate General Description This device contains six independent gates each of which performs the logic INVERT function Connection Diagram Dual-In-Line Package TL F 6616 – 1 Order Number DM54L04J or DM54L04W See NS Package Number J14A or W14B

Contextual Info: SN74AS1832 HEX 2-INPUT OR DRIVER SDAS045C – AUGUST 1984 – REVISED JANUARY 1995 • • D OR N PACKAGE TOP VIEW High Capacitive-Drive Capability Typical Delay Time of 3.9 ns (CL = 50 pF) and Typical Power Dissipation of Less Than 17 mW per Gate Center VCC and GND Configuration

Contextual Info: SN74AS1832 HEX 2-INPUT OR DRIVER SDAS045C – AUGUST 1984 – REVISED JANUARY 1995 • • D OR N PACKAGE TOP VIEW High Capacitive-Drive Capability Typical Delay Time of 3.9 ns (CL = 50 pF) and Typical Power Dissipation of Less Than 17 mW per Gate Center VCC and GND Configuration

Contextual Info: SN74AS1832 HEX 2-INPUT OR DRIVER SDAS045C – AUGUST 1984 – REVISED JANUARY 1995 • • D OR N PACKAGE TOP VIEW High Capacitive-Drive Capability Typical Delay Time of 3.9 ns (CL = 50 pF) and Typical Power Dissipation of Less Than 17 mW per Gate Center VCC and GND Configuration