HEWLETTPACKARD RF TRANSISTOR Search Results

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

ATF-10736

Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

Contextual Info: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor­ 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic

Contextual Info: Silicon Bipolar Transistors Reliability Data HBFP-0405 HBFP-0420 HBFP-0450 Description The following cumulative test results have been obtained by Hewlett-Packard from process and product qualification, reliability monitor, and engineering evaluation tests. For the purpose

high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

Hewlett-Packard LED

Abstract: HP MMIC optocouplers* hp
Contextual Info: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

Contextual Info: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

transistor s11 s12 s21 s22

Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic

AT-41511

Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
Contextual Info: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

a1270* transistor

Abstract: 1689c hp plotter
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

transistor k 4212 fet

Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
Contextual Info: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips

mmic a08

Abstract: MSA-0885 HP MMIC 101 A08 monolithic amplifier A08 mmic
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

Bipolar Junction Transistor

Abstract: 414 rf transistor AT-420
Contextual Info: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and

AT-420

Contextual Info: H EW LETT' mLlíM PA CK A R D RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature

HP MMIC INA

Abstract: AN-A005 chip die hp transistor mmic ina an-s012
Contextual Info: INA Bonding Configurations Application Bulletin 0007 Introduction RF INPUT This Application Bulletin provides assembly information for the INA family of MagICTM MMIC low noise amplifiers. Three chip geometries are covered: INA-01100, INA-02100, and INA-03100.

ina series

Abstract: Signal Path Designer AN-S003
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

915 MHz RFID

Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

marking code H.5 Sot 23-5

Abstract: FR4 substrate fiberglass HSMS-286C
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

AT64020

Abstract: AT-64020
Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic

Waveform Clipping With Schottky

Abstract: hsms-2802 hp d sOT23 diode for clippers schottky diode cross reference HSMS-2802 HSMS-28X2 HSMS2822
Contextual Info: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

HSMS2851

Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
Contextual Info: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar