GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Text: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
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Q62702-G117
GSO05553
GSO05553
Q62702-G117
CFH77
HEMT marking P
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ATF501P8
Abstract: ATF-501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
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ATF-501P8
5988-9767EN
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
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PDF
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ATF-501P8
Abstract: 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
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ATF-501P8
5988-9767EN
4570 8-pin RF
902-145
A004R
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
4558 schematic diagram
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PDF
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
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MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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PDF
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GS 9521
Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
CFH120-10
GS 9521
CFH120
CFH120-08
CFH120-10
1507 0745
HEMT marking K
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PDF
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
MAX 8985
pseudomorphic HEMT
ta 7176 datasheet
8772 P
CFH120
CFH120-08
CFH120-10
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953A
MGF4953A
12GHz
000pcs/reel
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PDF
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M 6965
Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Text: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;
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CFH400T
M 6965
HEMT marking D
CFH400T
72482
HEMT marking P
74923
HEMT marking K
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PDF
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Untitled
Abstract: No abstract text available
Text: CFH400 P - HEMT Target Datasheet Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz F = 0.65dB; Ga = 17.5dB @ 3V; 15mA; f=2GHz
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CFH400
OT343
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4953B
MGF4953B
20GHz
000pcs/reel
MGF4953B-01)
MGF4953B-70al
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PDF
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Untitled
Abstract: No abstract text available
Text: HMC752LC4 v01.0514 AMPLIFIERS - LOW NOISE - SMT GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Typical Applications Features This HMC752LC4 is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios Gain: 25 dB • Point-to-Multi-Point Radios P1dB Output Power: +13 dBm
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HMC752LC4
HMC752LC4
16mm2
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cfy siemens
Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Text: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
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CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
cfy siemens
CFY77-10
cfy77
HEMT marking P
059 906 051
CFY77-08
Q62702-F1549
Q62702-F1559
cfy 14 siemens
HEMT marking K
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6943-3
Abstract: No abstract text available
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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OT343
CFH800
Rn/50
6943-3
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
OT343
D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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PDF
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MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
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PDF
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transistor zo 107
Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
volt-69
Rn/50
transistor zo 107
831 transistor
Transistor 933
transistor 131-6
TRANSISTOR zo 109 ma
Hemt transistor
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MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
MGF4964
Micro-X marking "K"
transistor "micro-x" "marking" 3
low noise Micro-X marking "K"
HEMT marking K
Low Noise Gaas
GD-32
MGF4964B
MGF496
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CFY75
Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-F1368
Q62702-F1369
235b05
DDL75MG
CFY75
EHT08184
fl235b05
0QL7S41
CFY75
cfy 75
cfy 14 siemens
HEMT marking P
FMI 591
cfy siemens
CFY 19
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PDF
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CFY77-10
Abstract: HEMT HEMT marking K 036 906 051 VS005553
Text: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type
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OCR Scan
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VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY77-10
HEMT
HEMT marking K
036 906 051
VS005553
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PDF
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CFY 18
Abstract: HEMT marking D HEMT marking K VS005553
Text: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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CFY77
VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY 18
HEMT marking D
HEMT marking K
VS005553
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PDF
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HEMT marking K
Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Text: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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VS005553
CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
chap18
S35bD5
HEMT marking K
marking t54
CFY 18
cfy 14 siemens
marking code 51C
HEMT
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