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Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor mark code H1 Abstract: HI669A Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C	Original	PDF	HE9004 HI669A HI669A O-251 10sec transistor mark code H1
HI669A Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2003.07.21 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C	Original	PDF	HE9004 HI669A HI669A O-251
HI669A Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C	Original	PDF	HE9004 HI669A HI669A O-251
HI3055 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 1/2 HI3055 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3055 is designed for general purpose of amplifier and switching applications.	Original	PDF	HE9004 HI3055 HI3055
Untitled Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C	Original	PDF	HE9004 HI669A HI669A O-251 183oC 217oC 260oC