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    HSC1815

    Abstract: diode marking H2
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 183oC 217oC 260oC

    HSC1815

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815