HE8550
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull
|
Original
|
PDF
|
HE6114
HE8550
HE8550
150oC
200oC
183oC
217oC
260oC
245oC
10sec
|
HE8550
Abstract: transistor he8550 HE8550B
Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2003.10.03 Page No. : 1/3 MICROELECTRONICS CORP. HE8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
|
Original
|
PDF
|
HE6114
HE8550
HE8550
transistor he8550
HE8550B
|
HE8550
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Page No. : 1/3 MICROELECTRONICS CORP. HE8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
|
Original
|
PDF
|
HE6114
HE8550
HE8550
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2004.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B
|
Original
|
PDF
|
HE6114
HE8550
HE8550
183oC
217oC
260oC
|