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    HBT TRANSISTOR GAAS Search Results

    HBT TRANSISTOR GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HBT TRANSISTOR GAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    Untitled

    Abstract: No abstract text available
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS111011

    SGA-1263Z

    Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a

    SGA1263Z

    Abstract: SGA1263
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH SGA1263Z DCto4000MHz OT-363 50GHz DS111011 SGA1263

    MCH185A100JK

    Abstract: transistor Bc 540 pin transistor Bc 540
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SPA1526Z SOF-26 SOF-26 Matchi9421 SPA1526ZSQ MCH185A100JK transistor Bc 540 pin transistor Bc 540

    SPA1426Z

    Abstract: TAJA105K020R
    Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs


    Original     		PDF SPA1426Z SPA1426Z SOF-26 SOF-26 DS110610 SPA1426ZSQ TAJA105K020R

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot

    Untitled

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT


    Original     		PDF SGA9289Z OT-89 SGA9289Z DS140313 SGA9289ZSQ SGA9289ZSR

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz

    Untitled

    Abstract: No abstract text available
    Text: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable


    Original     		PDF SXB4089Z 400MHz 2500MHz OT-89 SXB4089Z 2500MHz

    Untitled

    Abstract: No abstract text available
    Text: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable


    Original     		PDF SXB4089Z 400MHz 2500MHz SXB4089Z OT-89 2500MHz

    SGA-1263

    Abstract: SGA-1263Z BY 356
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356

    trace code marking RFMD

    Abstract: SGA-1263 SGA-1263Z
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z

    25c2625

    Abstract: ECB-101161 267M3502104
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS121024 25c2625 ECB-101161 267M3502104

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343

    Untitled

    Abstract: No abstract text available
    Text: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor HBT MMIC housed in low-cost, surface-mountable


    Original     		PDF SXB4089Z 400MHz 2500MHz SXB4089Z OT-89 2500MHz

    MARKING HBT

    Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor

    Transistor BC 457

    Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
    Text: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs


    Original     		PDF SPA-1426Z SOF-26 SPA-1426Z SOF-26 SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3 Transistor BC 457 MCH185CN104KK TAJA105K020R

    MCH185A100JK

    Abstract: 1000PPM
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SPA1526Z SOF-26 SOF-26 SPA1526ZSQ SPA1526ZSR MCH185A100JK 1000PPM

    SPA-1426

    Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
    Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs


    Original     		PDF SPA1426Z SPA1426Z SOF-26 SOF-26 Opt17] DS120601 SPA-1426 Transistor BC 457 MCH185A8R2JK MCH185A221JK

    spa1526

    Abstract: No abstract text available
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526

    Transistor BC 457

    Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
    Text: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA-1526Z SOF-26 SPA-1526Z SOF-26 SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3 Transistor BC 457 bc 457 Transistor MCH185A101JK MCH185CN104KK TAJA105K020R MCH185A100JK

    Untitled

    Abstract: No abstract text available
    Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs


    Original     		PDF SPA1426Z SOF-26 SPA1426Z enha9421 DS120601 SPA1426ZSQ