QM10TE-HB
Abstract: bup transistor bvp DIODE QM10 QM10T
Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250
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QM10TE-HB
E80276
E80271
QM10TE-HB
bup transistor
bvp DIODE
QM10
QM10T
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72976
Abstract: 73006
Text: Model Number Index Model# 26 Page# B . . . . . . . . . . . . . . 22 HB. . . . . . . . . . . . . 22 MDP. . . . . . . . . . . . 14 MDP-S. . . . . . . . . . 14 MDP-ST. . . . . . . . . 14 MDP-X. . . . . . . . . . 14 1297. . . . . . . . . . . .13 1297. . . . . . . . . . . .25
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1330-ST.
72976
73006
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Untitled
Abstract: No abstract text available
Text: Model Number Index Pomona r U rn U n d jiG Mane Forriotw ACCESS Page AL-B. .90533. .58 B . .90534. .55 BNC-C. .90445. .32 HB. .90535. .55 MDP. .90505. .76 MDP-S. .90505. .76
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PT080.
SP150B
22505A.
22506A.
7048AL.
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Tektronix 2712
Abstract: 0805C104KAT2A
Text: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced
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DRF1400
DRF1400
LMR400
DRF1300
Tektronix 2712
0805C104KAT2A
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Untitled
Abstract: No abstract text available
Text: MAQ3203 High-Brightness LED Driver Controller with High-Side Current Sense General Description The MAQ3203 is a hysteretic, step-down, constantcurrent, High-Brightness LED HB LED driver. It provides an ideal solution for interior/exterior lighting, architectural
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MAQ3203
MAQ3203
M9999-032411-A
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YJ 162A
Abstract: CCO100A-57.1429M
Text: Barrier Blocks Accessories Fanning Strips Features • Minimize wiring errors • Available in straight and right angle styles Performance Data Materials Insulation Material: UL 94 HB rated XPC, chocolate Contact Material: Brass Contact Plating: Cadmium Straight Type
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140J-1
141J-1
142JT*
142J-2
YJ 162A
CCO100A-57.1429M
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Untitled
Abstract: No abstract text available
Text: MAQ3203 High-Brightness LED Driver Controller with High-Side Current Sense General Description The MAQ3203 is a hysteretic, step-down, constantcurrent, High-Brightness LED HB LED driver. It provides an ideal solution for interior/exterior lighting, architectural
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MAQ3203
MAQ3203
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Untitled
Abstract: No abstract text available
Text: MAQ3203 High-Brightness LED Driver Controller with High-Side Current Sense General Description The MAQ3203 is a hysteretic, step-down, constantcurrent, High-Brightness LED HB LED driver. It provides an ideal solution for interior/exterior lighting, architectural
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MAQ3203
MAQ3203
M9999-032411-A
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N1297NS260
Abstract: No abstract text available
Text: EVALUATION LABORATORY Rating Report - Issue 1 Date - 6 February, 2001 Origin - EL Total Pages - 11 Phase Control Thyristor Types N1297NS200 to N1297NS260 Author Checked Approved HB Abstract The N1297NS200-260 phase control Thyristor range features a 50mm diameter silicon slice
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N1297NS200
N1297NS260
N1297NS200-260
N450SH26
91TR6
N1297NS260.
N1297NS260
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Untitled
Abstract: No abstract text available
Text: MIC3203/MIC3203-1 High-Brightness LED Driver Controller with High-Side Current Sense General Description Features The MIC3203 is a hysteretic, step-down, constant-current, High-Brightness LED HB LED driver. It provides an ideal solution for interior/exterior lighting, architectural and
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MIC3203/MIC3203-1
MIC3203
M9999-032910-A
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mic320
Abstract: CRCW08051002FKEA MIC3203 8led icc axial 4.7uf 50v MR-16 GRM2165C2A271JA01D 60V3A 2014 8pin
Text: MIC3203/MIC3203-1 High-Brightness LED Driver Controller with High-Side Current Sense General Description Features The MIC3203 is a hysteretic, step-down, constant-current, High-Brightness LED HB LED driver. It provides an ideal solution for interior/exterior lighting, architectural and
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MIC3203/MIC3203-1
MIC3203
M9999-032910-A
mic320
CRCW08051002FKEA
8led
icc axial 4.7uf 50v
MR-16
GRM2165C2A271JA01D
60V3A
2014 8pin
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Untitled
Abstract: No abstract text available
Text: STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • High speed switching series • Minimized tail current 3 2 1 TO-3PF
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STGW40H65FB,
STGFW40H65FB,
STGWT40H65FB
O-247
DocID025171
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Untitled
Abstract: No abstract text available
Text: | IHIS DRAWING IS UNPUBLISHLD. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. LOC DIST HB R E V IS IO N S P C1 ©PART C DESCRIPTION UK 1 .CHANGETE LOGO 2.ADD UNE IDENTIFICATION 3.PN OBSOLETE ^.TERMINALS TOLERANCE CLARIFICATION rn n DATE UWN APVD
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04-MAY-12
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Untitled
Abstract: No abstract text available
Text: STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Low saturation voltage: VCE sat = 1.6 V (typ.)
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STGW40H60DLFB,
STGWT40H60DLFB
O-247
DocID024370
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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Untitled
Abstract: No abstract text available
Text: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V
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STGW40H65FB
STGWT40H65FB
O-247
DocID025171
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HB FULLER
Abstract: xr-5410
Text: HSTEXflR XR-5410 BBE Low Voltages Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL INFORMATION The XR-5410 is a low voltage version of the high definition audio matched-pair sound enhancement p ro c e sso r u sin g the patented B B E ® S o u n d
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XR-5410
XR-5410
HB FULLER
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NAN YA PLASTICS 6410G5
Abstract: 6410g5 1402G 6410G3 QMFZ2.E130155 3210G6 NAN YA PLASTICS 1403g6 6210G3 6401G6 2210G6
Text: QMFZ2.E130155 - Plastics - Component Page 1 of 9 QMFZ2.E130155 Plastics - Component Page Bottom Previous Page Notice of Disclaimer Plastics - Component See Page 6 for appropriate mould material Guide Information NAN YA PLASTICS CORP PLASTICS 4TH DIV 3RD FL
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E130155
E130155
NAN YA PLASTICS 6410G5
6410g5
1402G
6410G3
QMFZ2.E130155
3210G6
NAN YA PLASTICS 1403g6
6210G3
6401G6
2210G6
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skb 7/12
Abstract: 1103022-2 1-1102664-5 2D216 70.10.02.41 ha64 Tyco hts 1-1103640-9 hf123 2-1103000-3 2-1102352-1
Text: HTS Industrie-Steckverbinder HTS Heavy Duty Connectors HE.32 Kontakteinsätze/Contact inserts Baugröße/Size 10 Kontaktzahlen No. of contacts Schraubanschluss, Federzug-Anschluss, Crimpanschluss für gedrehte HE Crimpkontakte Screw terminal, Spring Clamp terminal,
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1106436-4
Abstract: Bolt Torque M32 AMP PBT connector 0-1103057-1 1103022-2 1103096-1 HB 541 74004 2-1103032-3 2-1104012-3
Text: RoHS Ready Industrie-Steckverbinder Heavy Duty Connectors GLOBAL INDUSTRIAL & COMMERCIAL T YCO E L E C T R O N I C S “ T E C H N O LO GY P O R T F O L I O ” ● Connector Systems / Electromechanical Components ● Antennas, GPS Antennas, Integrated Antenna Systems
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XR-5410
Abstract: No abstract text available
Text: er EXAR XR-5410 BBE Low Voltages Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL INFORMATION j The XR-5410 is a low voltage version of the high definition audio matched-pair sound enhancement processo r using th e pa te n te d BBE® Sound Enhancement technique. It is designed for use with
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XR-5410
XR-5410
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SKB 7 04
Abstract: SKB 7 02 crimping rj45 cat5e skb 7/12 bei m25 twinax SKB 7 / 12 M22520/1-01 HA 16 Sti SB 1-16 SCHUKO
Text: RoHS Ready Industrie-Steckverbinder Heavy Duty Connectors GLOBAL INDUSTRIAL AND COMMERCIAL TYCO ELECTRONICS TECHNOLOGY PORTFOLIO ● Connector Systems / Electromechanical Components ● Wire & Cable ● Resistors and Inductors ● Circuit Protection Devices
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ATF54143.s2p
Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency
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ATF-54143
MTT-28,
ATF-54143
5989-0852EN
ATF54143.s2p
5988-2336EN
transistor C610
5989-0034EN
TOKO LL1608-FSR15
ATF54143
atf54143 pHEMT
AN-1222
BCV62C
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a1271
Abstract: 0805CS-270XMBC CGY120 CGY121 Q62702-G0071 54102-A1271-J60 cgy siemens SIEMENS f 121-B Siemens B
Text: CGY 121 B GaAs MMIC Preliminary Data l l l l l l l RF-in; -Vg Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V
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Q62702-G0071
a1271
0805CS-270XMBC
CGY120
CGY121
Q62702-G0071
54102-A1271-J60
cgy siemens
SIEMENS f
121-B
Siemens B
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