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    HARRIS SEMICONDUCTOR AN7260.2 Search Results

    HARRIS SEMICONDUCTOR AN7260.2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    HARRIS SEMICONDUCTOR AN7260.2 Datasheets Context Search

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    jfet cascode

    Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
    Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the


    Original     		AN7260 jfet cascode vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching PDF