Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HARRIS IGBT Search Results

    HARRIS IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HARRIS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200 PDF

    MOSFET 1200v 30a

    Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
    Text: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:


    Original     		FO-011 1-800-4-HARRIS MOSFET 1200v 30a Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C PDF

    mlt 22

    Abstract: MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator HIP2030 IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor
    Text: Harris Semiconductor No. AN9408.2 Harris Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Harris Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,


    Original     		AN9408 HIP2030 HIP2030, HIP2030EVAL, DB307A. mlt 22 MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor PDF

    100w audio amplifier circuit diagram class D

    Abstract: CA4013 amidon t106-3 AN9525 2 speakers 1 crossover amplifier pcb HIP4080AEVAL2 power mosfet audio amplifier class-A 2.1 crossover amplifier pcb motorola 100w class-d audio amplifier 78L06 download datasheet
    Text: Harris Semiconductor No. AN9525.2 Harris Intelligent Power March 1996 Class-D Audio II Evaluation Board HIP4080AEVAL2 Author: George E. Danz Harris COOLAUDIO Products Introduction Class-D Efficiency Historically, audio amplifiers have been configured as Class A,


    Original     		AN9525 HIP4080AEVAL2) HIP4080AEVAL2 1-800-4-HARRIS 100w audio amplifier circuit diagram class D CA4013 amidon t106-3 2 speakers 1 crossover amplifier pcb power mosfet audio amplifier class-A 2.1 crossover amplifier pcb motorola 100w class-d audio amplifier 78L06 download datasheet PDF

    CD4016BEX

    Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
    Text: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		BR-027 82CXXX CD4016BEX MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE PDF

    SCHEMATIC POWER SUPPLY WITH IGBTS

    Abstract: inverter 3kw schematic 230vac to 30vdc transformer SCHEMATIC WITH IGBTS 3KW flyback converter AN9105 GS601 HVIC 3kw inverter RUR860
    Text: Harris Semiconductor No. AN9105.1 Harris Intelligent Power May 1992 HVIC/IGBT HALF-BRIDGE CONVERTER EVALUATION CIRCUIT Author: George Danz The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration


    Original     		AN9105 500VDC. 230VAC SP601 AN-8829 25VDC 500VDC SP601 GS601) RUR860 SCHEMATIC POWER SUPPLY WITH IGBTS inverter 3kw schematic 230vac to 30vdc transformer SCHEMATIC WITH IGBTS 3KW flyback converter GS601 HVIC 3kw inverter RUR860 PDF

    SCHEMATIC WITH IGBTS

    Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
    Text: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high


    Original     		AN8603 ED-26, SCHEMATIC WITH IGBTS thyristor rca MOS-Gated Thyristor Abstract schematic power transistor PDF

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS PDF

    40E06

    Abstract: 80E06
    Text: How to use the Transient thermal models Harris Semiconductor The transient thermal impedance models available from HARRIS semiconductor provide the user with a simple method to estimate the junction temperature rise under a transient condition. The models will


    Original     		4E-05 6E-05 0E-04 40E06 80E06 PDF

    power supply IRF830 APPLICATION

    Abstract: 220 ac voltage regulator without transformer an9101 250VAC CAP FAN REGULATOR HV-2405E IRF830 equivalent Gould 2608 MOSFET IGBT THEORY AND APPLICATIONS SCHEMATIC POWER SUPPLY irf840 TRANSISTOR mosfet IRF840
    Text: Harris Semiconductor No. AN9217.2 Harris Intelligent Power April 1994 HIGH CURRENT OFF LINE POWER SUPPLY Author: Don LaFontaine Introduction Overview Design Engineers are constantly pushed to reduce the space and cost of the power supply in their systems. For


    Original     		AN9217 HV-2405E AN9101 power supply IRF830 APPLICATION 220 ac voltage regulator without transformer 250VAC CAP FAN REGULATOR IRF830 equivalent Gould 2608 MOSFET IGBT THEORY AND APPLICATIONS SCHEMATIC POWER SUPPLY irf840 TRANSISTOR mosfet IRF840 PDF

    "high voltage current mirror"

    Abstract: Automatic voltage regulator RBS MOTOR SOFT START 10 AMP 1000V RECTIFIER DIODE high voltage current mirror 220 ac INVERTER without transformer design of mosfet based power supply automatic transfer switch 400v circuit diagram N CHANNEL MOSFET 10A 1000V IRF450 equivalent
    Text: Harris Semiconductor No. AN9335 Harris Intelligent Power December 1993 HIP5500 HIGH VOLTAGE 500VDC POWER SUPPLY DRIVER IC Author: George E. Danz Introduction MOSFET (shown shaded in Figure 1), this approach lacks the advantages of a “distributed” turn-off device and doesn’t


    Original     		AN9335 HIP5500 500VDC) HIP2500 500VDC O-220 20pin, "high voltage current mirror" Automatic voltage regulator RBS MOTOR SOFT START 10 AMP 1000V RECTIFIER DIODE high voltage current mirror 220 ac INVERTER without transformer design of mosfet based power supply automatic transfer switch 400v circuit diagram N CHANNEL MOSFET 10A 1000V IRF450 equivalent PDF

    hip2500

    Abstract: AN9010 igbt 300V 10A HV Floating MOS-Gate Driver circuits SP601 switched reluctance motor IGBT 1000V igbt dc to dc buck converter SP600 400V igbt dc to dc buck converter igbt dc to dc converter capacitor charging
    Text: Harris Semiconductor No. AN9010.5 Harris Intelligent Power July 1997 HIP2500 High Voltage 500VDC Half-Bridge Driver IC Author: George E. Danz Introduction The HIP2500 is an high voltage, high speed half-bridge driver for driving n-channel MOS gated power devices. The


    Original     		AN9010 HIP2500 500VDC) 500VDC 230VAC SP600/SP601 ISO9000 igbt 300V 10A HV Floating MOS-Gate Driver circuits SP601 switched reluctance motor IGBT 1000V igbt dc to dc buck converter SP600 400V igbt dc to dc buck converter igbt dc to dc converter capacitor charging PDF

    SCHEMATIC POWER SUPPLY irf840

    Abstract: irf840 mosfet drive circuit diagram LM7812 3a TRANSISTOR mosfet IRF840 amidon 43 toroid core ic lm7812 transistor irf840 frequency range amidon T94 toroid core P3657-A PE-51686
    Text: Harris Semiconductor No. AN9417 Harris Intelligent Power December 1994 A 360W, POWER FACTOR CORRECTED, OFF-LINE POWER SUPPLY, USING THE HIP5500 Author: David Hamo Introduction period is the conduction time of the bootstrap diode. This time is concurrent with the HIP5500 phase node, VS, falling


    Original     		AN9417 HIP5500 HIP5500 36VDC A114M SHF5000A122A 1N4372 1N961 PE-51686 FB43-101 SCHEMATIC POWER SUPPLY irf840 irf840 mosfet drive circuit diagram LM7812 3a TRANSISTOR mosfet IRF840 amidon 43 toroid core ic lm7812 transistor irf840 frequency range amidon T94 toroid core P3657-A PE-51686 PDF

    GEC Marconi Materials Technology

    Abstract: ford ppap INCOMING RAW MATERIAL specification in-process quality control ford motor company Ford in-process quality INCOMING RAW MATERIAL INSPECTION procedure ford m Nokia 9000 INCOMING RAW MATERIAL INSPECTION procedure work instruction raw material stores delco semiconductors
    Text: BRIEF HISTORY of HARRIS SEMICONDUCTOR The modern-day Harris Corporation has its roots in Radiation, Inc., an electronics company formed in Melbourne, Florida, in 1950. Radiation was founded shortly after the first rocket was launched from Cape Canaveral. The company's original staff of 12 employees pioneered the


    Original     		PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    HGTH20N40E1D

    Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
    Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS


    OCR Scan     		O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide PDF

    Untitled

    Abstract: No abstract text available
    Text: In t h i s i s s u e Harris Broadens PWM Controller Family Complete Power Spring 1999 Harris’ New SMPS IGBTs vs. MOSFETs: No Contest The challenge: Make smaller Solutions from Device Bay First Class D Full Bandwidth Reference Designs power supplies. Use fewer


    OCR Scan     		100kHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR bôE ]> 4 3 G2 E 7 1 WÊ 0 Q S G 2 DS HHAS HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 HARRIS SEMICONDUCTOR 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-218AC


    OCR Scan     		HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA M302271 HGTH20N40C1 HGTM20N40C1 HGTP15N40C1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •


    OCR Scan     		M3D2S71 HGTH12N40C1D, HGTH12N40E1D HGTH12N50C1D, HGTH12N50E1D O-218AC 40E1D/50E1D D/50C1D AN7254 AN7260) PDF

    chrysler ccd bus

    Abstract: bq 8055 MARKING CODE SMD JW CDP68EM05C4 6818A chrysler sci diagnostic port 5v rx tx RCA CDP 18 U 42 cd HARRIS HIP 4080 Motorola transistor smd marking codes 6805E2
    Text: CDP68 CMOS MICROCONTROLLERS & PERIPHERALS 1995 ¿ • m j* . j m - - - r •■ .-*■ . ii- « HARRIS S E M 1C O N D U C T O R CEI H A R R I S U U S E M I C O N D U C T O R HARRIS SEMICONDUCTOR In December 1988, Harris Semiconductor acquired the General Electric Solid


    OCR Scan     		CDP68 CDP6805 Gu1993 DB235B) 680pp) chrysler ccd bus bq 8055 MARKING CODE SMD JW CDP68EM05C4 6818A chrysler sci diagnostic port 5v rx tx RCA CDP 18 U 42 cd HARRIS HIP 4080 Motorola transistor smd marking codes 6805E2 PDF

    wf vqe 24 d

    Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
    Text: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns


    OCR Scan     		0SD21D TG20N10OD2 520ns HGTG20N100D2 wf vqe 24 d AN7254 AN7260 transistor c90 wx2 transistor PDF

    kc 637

    Abstract: No abstract text available
    Text: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features


    OCR Scan     		M3D2271 HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-218AC M302271 HGTH12N40C1 HGmi2N40C1 HGTP10N40C1 kc 637 PDF

    20n60b3d

    Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
    Text: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.


    OCR Scan     		-220A 60B3D 20n60b3d 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS GENERATION III ULTRA-FAST SWITCHING "UFS" IGBT FUTURE PRODUCTS o J\X Ju TO-252AA TO-220AB TO-247 600V HGTD5N60B3 HGTD7N60B3 HGTD5N60B3S HGTD7N60B3S HGTP12N60B3 HGTG30N60B3 HGTG40N60B3 1200V HGTD4N120B3 HGTD6N120B3 HGTD4N120B3S HGTD6N120B3S HGTP10N120B3


    OCR Scan     		O-251AA HGTD5N60B3 HGTD7N60B3 HGTD4N120B3 HGTD6N120B3 O-252AA HGTD5N60B3S HGTD7N60B3S HGTD4N120B3S HGTD6N120B3S PDF