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    HAMMING CODE Search Results

    HAMMING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    HAMMING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    flash hamming ecc

    Abstract: hamming code 512 bytes SLC nand hamming code 512 bytes hamming hamming code 7 bit hamming code micron ecc nand
    Text: TN-29-08: Hamming Codes for NAND Flash Memory Devices Overview Technical Note Hamming Codes for NAND Flash Memory Devices For the latest NAND Flash product data sheets, see www.micron.com/products/nand/partlist.aspx. Overview NAND Flash memory products have become the technology of choice to satisfy highdensity, nonvolatile memory requirements in many applications. NAND Flash technology provides large amounts of storage at a price point lower than any of today's semiconductor alternatives. NAND Flash development has focused on low cost per bit,


    Original     		TN-29-08: 09005aef819bc571 09005aef819bc51c tn2908 flash hamming ecc hamming code 512 bytes SLC nand hamming code 512 bytes hamming hamming code 7 bit hamming code micron ecc nand PDF

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
    Text: SY10E193 SY100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR E160 E193 MC10193 SY100E193 SY10E193 SECDED PDF

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193
    Text: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. M9999-032006 E160 E193 MC10193 SY100E193 SY10E193 PDF

    SECDED

    Abstract: E160 E193 MC10193 SY100E193 SY10E193
    Text: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR SECDED E160 E193 MC10193 SY100E193 SY10E193 PDF

    DL140

    Abstract: E160 MC100E193 MC10E193
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction MC10E193 Circuit MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    Original     		MC10E193 MC100E193 MC10E/100E193 12-bit MC10E193/D* MC10E193/D DL140 E160 MC100E193 MC10E193 PDF

    7 bit hamming code

    Abstract: hamming encoding hamming encoder AN1221 HC05 HC08 HC08 c code example AN-1221 HC08 code example IASM08
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1221/D AN1221 Hamming Error Control Coding Techniques with the HC08 MCU by Mark McQuilken & Mark Glenewinkel CSIC Applications Freescale Semiconductor, Inc. INTRODUCTION


    Original     		AN1221/D AN1221 7 bit hamming code hamming encoding hamming encoder AN1221 HC05 HC08 HC08 c code example AN-1221 HC08 code example IASM08 PDF

    54HSC630

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS 54HSC/T630 APRIL 1995 DS3595-3.4 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to


    Original     		54HSC/T630 DS3595-3 16-BIT 54HSC/T630 22-bit 54HSC630 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ Hamming code generation 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with industry standard 10KH,


    OCR Scan     		lnternal75Ki2 MC10E/100E193 SY10E193 SY100E193 pa850 SY10E193JC J28-1 SY100E193JC PDF

    XTD22

    Abstract: No abstract text available
    Text: AT&T Microelectronics Product Specification Sheet 1042BL initial Use 5ESS EDC32 Description The 1042BL EDC32 performs error detection and correction on a 32-bit data word using seven bits of correction code. The correction code generated by the device is a modified Hamming


    OCR Scan     		1042BL EDC32 1042BL EDC32 32-bit am29c660 68-pin XTD22 PDF

    hamming code

    Abstract: "hamming code" 4 bit hamming code BU-203
    Text: AmZ8160 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynamic memory


    OCR Scan     		16-Bit AmZ8160 AmZ8000 Z8000 Am2960 hamming code "hamming code" 4 bit hamming code BU-203 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 12-bit PDF

    Z8000

    Abstract: "hamming code"
    Text: Am2960 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynam ic memory


    OCR Scan     		Am2960 16-Bit Am2960s 32-bit 64-bit Z8000 "hamming code" PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 MC10193, expan1100 DL140 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 12-bit DL140 b3b7252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Work? Error-correcting codes sums to 0. Thus, calculating the checkbits as shown in Fig­ Many types of error-correcting techniques exist, but in data ure 1, the data word D15-D„) 0011 1101 1001 1001 yields communications, Hamming encoding probably finds the


    OCR Scan     		16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ C10E/100E193 10/100E SY10E193JC J28-1 SY10E193JCTR SY100E193JC PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERR OR DETECTION/ C O RR ECT IO N CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KD MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTIVE CIRCUIT SYNERG Y SEMICONDUCTOR |Y100E193 O i l U 1 1 1 y%3 D ESCRIPTIO N FEATURES The SY10E/100E/101E193 is an errordetection and correction EDAC circuit designed for use in new, high performance ECL systems. The E193 generates hamming parity codes on an 8 -bit


    OCR Scan     		Y100E193 SY10E/100E/101E193 10KH00 PDF

    MD0205

    Abstract: ims c012 CD05 CD07 CD10 CD12 MB1426 MD03 CD00 cd06
    Text: FU JITSU 16 BIT ERROR CHECKING & CORRECTION DESCRIPTION The MB1426 E rror Checking and C orrection ECC device is designed to enhance memory reliability in 16-bit systems. Using a m odified Hamming SingleE rror-C orrection/D ouble-E rror-D etection (SEC/DED) code, the ECC can find


    OCR Scan     		MB1426 16-bit 64-pin MB1426 64-Lead PGA-64C-A01) 021DIA MD0205 ims c012 CD05 CD07 CD10 CD12 MD03 CD00 cd06 PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU 16 BIT ERROR CHECKING & CORRECTION DESCRIPTION The MB1426 E rror Checking and C orrection ECC device is designed to enhance memory reliability in 16-bit systems. Using a m odified Hamming SingleE rror-C orrection/D ouble-E rror-D etection (SEC/DED) code, the ECC can find


    OCR Scan     		MB1426 16-bit 64-pin 64-Lead PGA-64C-A01) PDF

    MC10193

    Abstract: E160 E193 SY100E193 SY101E193
    Text: A ERROR DETECTION/ CORRECTIVE CIRCUIT SYN ERG Y e v in n F ic n 1 y 101E193 _ SEMICONDUCTOR J D E S C R IP T IO N FEATURES Hamming Code Generation. 8 - Bit Wide. Expandable for more width. Provides Parity Register. ESD Protection of 2000V.


    OCR Scan     		SY100E193: SY101E193: MC10E/100E193. SY10E/100E/101E193 MC10193 E160 E193 SY100E193 SY101E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA • • • • • • M C10E193 M C100E193 Hamming Code Generation 8-Bit Word, Expandable Provides Parity of Whole Word Scannable Parity Register Extended 100E Vgg Range of -4 .2 V to 75 k il Input Pulldown Resistors


    OCR Scan     		C10E193 C100E193 MC10E/100E193 PDF