PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
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CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
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smd 41B
Abstract: ic 41b hall sensor smd hall current sensor ic smd hall sensor hall chip smd
Text: Low current consumption and high sensitivity CMOS Hall IC AN48840B/41B Overview The AN48840B/41B are Hall IC magnetic sensor which has 2 times or more sensitivity and low current consumption of about one fiftieth compared with our conventional one. In these Hall IC, Hall element,
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AN48840B/41B
AN48840B/41B
AN48840B
AN48841B
M00721AE
smd 41B
ic 41b
hall sensor smd
hall current sensor ic
smd hall sensor
hall chip smd
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transistor 5d smd
Abstract: AN48820A smd diode 5d smd transistor 5d 5d smd SMD Hall SMD Hall sensors smd code b- 1- 4 Hall element smd code Hall element mini inverter smd
Text: New CMOS Hall-IC AN48820A/48830B Overview This Hall sensor IC incorporates CMOS technology forhigh sensitivity and low power consumption. Hall element, offset cancel circuit, amplifier circuit, sample & hold circuit, Schmitt circuit and output FETs are integrated onto
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AN48820A/48830B
AN48820A/AN48830B
AN48820A
AN48830B
transistor 5d smd
AN48820A
smd diode 5d
smd transistor 5d
5d smd
SMD Hall
SMD Hall sensors
smd code b- 1- 4 Hall element
smd code Hall element
mini inverter smd
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Untitled
Abstract: No abstract text available
Text: Doc No. TA4-EA-06180 Revision. 2 Product Standards AN44140A Sine-wave PWM drive system and rotor position detection method by 1-Hall-sensor 1-Hall-Sensor Driver IC for 3-phase Brushless Motor FEATURES APPLICATIONS Driver IC for 3-phase brushless fan motor
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TA4-EA-06180
AN44140A
24-pin
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3 phase soft start motor control diagram
Abstract: No abstract text available
Text: Doc No. TA4-EA-06180 Revision. 1 Product Standards AN44140A Sine-wave PWM drive system and rotor position detection method by 1-Hall-sensor 1-Hall-Sensor Driver IC for 3-phase Brushless Motor FEATURES APPLICATIONS Driver IC for 3-phase brushless fan motor
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TA4-EA-06180
AN44140A
24-pin
3 phase soft start motor control diagram
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hall sensor 3hr
Abstract: marking KR 4pin OH003 OH10003 hall sensor TYP 688 panasonic device marking examples
Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10003
OH003)
hall sensor 3hr
marking KR 4pin
OH003
OH10003
hall sensor TYP 688
panasonic device marking examples
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marking KR 4pin
Abstract: OH004 OH10004
Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage
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OH10004
OH004)
marking KR 4pin
OH004
OH10004
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OH009
Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor
Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10009
OH009)
OH009
OH10009
hall sensor Panasonic GaAs
4pin hall sensor
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OH010
Abstract: OH10010 hall sensor 4pin
Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)
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OH10010
OH010)
OH010
OH10010
hall sensor 4pin
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Untitled
Abstract: No abstract text available
Text: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.40+0.10 -0.05 0.10 The AN48800A is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48800A
AN48800A
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hall sensor Panasonic GaAs
Abstract: OH10010 OH010
Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ
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OH10010
OH010)
hall sensor Panasonic GaAs
OH10010
OH010
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4G2 hall
Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ
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OH10003
OH003)
4G2 hall
OH003
hall sensor 3hr
OH10003
hall sensor Panasonic GaAs
hall sensor TYP 688
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OH004
Abstract: OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples
Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ
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OH10004
OH004)
OH004
OH10004
hall sensor Panasonic GaAs
marking KR 4pin
panasonic device marking examples
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OH008
Abstract: OH10008 hall sensor Panasonic GaAs
Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ
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OH10008
OH008)
OH008
OH10008
hall sensor Panasonic GaAs
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panasonic device marking examples
Abstract: hall sensor 40 L
Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
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OH10004
OH004)
panasonic device marking examples
hall sensor 40 L
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hall sensor 40 L
Abstract: No abstract text available
Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.6±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
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OH10008
OH008)
hall sensor 40 L
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4G2 hall
Abstract: hall sensor 40 L
Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
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OH10003
OH003)
4G2 hall
hall sensor 40 L
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hall sensor 40 L
Abstract: No abstract text available
Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
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OH10009
OH009)
hall sensor 40 L
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hall sensor 40 L
Abstract: No abstract text available
Text: MA111 GaAs Hall Elements OH10023 OH023 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Output resistance : typ. 7kΩ(max. 10kΩ) ● Sealed in the Mini type (4-pin) package. Automatic insertion through
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MA111
OH10023
OH023)
hall sensor 40 L
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OH023
Abstract: OH10023
Text: MA111 GaAs Hall Elements OH10023 OH023 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Output resistance : typ. 7kΩ(max. 10kΩ) ● Sealed in the Mini type (4-pin) package. Automatic insertion through
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MA111
OH10023
OH023)
OH023
OH10023
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hall sensor 40 L
Abstract: No abstract text available
Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ
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OH10010
OH010)
hall sensor 40 L
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AN48840B
Abstract: No abstract text available
Text: AN48840B Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation For low-speed rotation detection 0.225 0.22+0.10 −0.05 4 M Di ain sc te on na tin nc ue e/ d The AN48840B is a Hall ICs (a magnetic sensor) which has 2 times
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AN48840B
AN48840B
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AN48840B
Abstract: hall sensor smd 80 L
Text: AN48840B Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation For low-speed rotation detection 0.225 0.22+0.10 −0.05 4 M Di ain sc te on na tin nc ue e/ d The AN48840B is a Hall ICs (a magnetic sensor) which has 2 times
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AN48840B
AN48840B
hall sensor smd 80 L
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lt4054
Abstract: OCP2023 mp1423 OCP2030 GA8513 OCP2020 Li-ion charger LT4054 MP1410 ocp3601 ocp8020
Text: Orient-Chip Semiconductor Co., Ltd Products cross reference Hall Sensor Competitor Part Number Infineon TLE4913 Allegro A3212 Melexis MLX90248 Anachip AH180 ANPEC APX9132 Honeywell SS40 Melexis US1881 Panasonic DN6851 Asahi Kasei EW512 Asahi Kasei EW732 OCS Part
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TLE4913
A3212
MLX90248
AH180
APX9132
US1881
DN6851
EW512
EW732
OCH168
lt4054
OCP2023
mp1423
OCP2030
GA8513
OCP2020
Li-ion charger LT4054
MP1410
ocp3601
ocp8020
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