HALL SENSOR PANASONIC Search Results

PHOTO TRANSISTOR 940nm to-18

Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Contextual Info: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,

smd 41B

Abstract: ic 41b hall sensor smd hall current sensor ic smd hall sensor hall chip smd
Contextual Info: Low current consumption and high sensitivity CMOS Hall IC AN48840B/41B „ Overview The AN48840B/41B are Hall IC magnetic sensor which has 2 times or more sensitivity and low current consumption of about one fiftieth compared with our conventional one. In these Hall IC, Hall element,

transistor 5d smd

Abstract: AN48820A smd diode 5d smd transistor 5d 5d smd SMD Hall SMD Hall sensors smd code b- 1- 4 Hall element smd code Hall element mini inverter smd
Contextual Info: New CMOS Hall-IC AN48820A/48830B „ Overview This Hall sensor IC incorporates CMOS technology forhigh sensitivity and low power consumption. Hall element, offset cancel circuit, amplifier circuit, sample & hold circuit, Schmitt circuit and output FETs are integrated onto

Contextual Info: Doc No. TA4-EA-06180 Revision. 2 Product Standards AN44140A Sine-wave PWM drive system and rotor position detection method by 1-Hall-sensor 1-Hall-Sensor Driver IC for 3-phase Brushless Motor FEATURES APPLICATIONS  Driver IC for 3-phase brushless fan motor

3 phase soft start motor control diagram

Contextual Info: Doc No. TA4-EA-06180 Revision. 1 Product Standards AN44140A Sine-wave PWM drive system and rotor position detection method by 1-Hall-sensor 1-Hall-Sensor Driver IC for 3-phase Brushless Motor FEATURES APPLICATIONS  Driver IC for 3-phase brushless fan motor

hall sensor 3hr

Abstract: marking KR 4pin OH003 OH10003 hall sensor TYP 688 panasonic device marking examples
Contextual Info: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the

marking KR 4pin

Abstract: OH004 OH10004
Contextual Info: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage

OH009

Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor
Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the

OH010

Abstract: OH10010 hall sensor 4pin
Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)

Contextual Info: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.40+0.10 -0.05 0.10 The AN48800A is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our

hall sensor Panasonic GaAs

Abstract: OH10010 OH010
Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ

4G2 hall

Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
Contextual Info: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ

OH004

Abstract: OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples
Contextual Info: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ

OH008

Abstract: OH10008 hall sensor Panasonic GaAs
Contextual Info: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ

panasonic device marking examples

Abstract: hall sensor 40 L
Contextual Info: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.6±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)

4G2 hall

Abstract: hall sensor 40 L
Contextual Info: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)

hall sensor 40 L

Contextual Info: MA111 GaAs Hall Elements OH10023 OH023 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Output resistance : typ. 7kΩ(max. 10kΩ) ● Sealed in the Mini type (4-pin) package. Automatic insertion through

OH023

Abstract: OH10023
Contextual Info: MA111 GaAs Hall Elements OH10023 OH023 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Output resistance : typ. 7kΩ(max. 10kΩ) ● Sealed in the Mini type (4-pin) package. Automatic insertion through

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ

AN48840B

Contextual Info: AN48840B Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation For low-speed rotation detection 0.225 0.22+0.10 −0.05 4 M Di ain sc te on na tin nc ue e/ d The AN48840B is a Hall ICs (a magnetic sensor) which has 2 times

AN48840B

Abstract: hall sensor smd 80 L
Contextual Info: AN48840B Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation For low-speed rotation detection 0.225 0.22+0.10 −0.05 4 M Di ain sc te on na tin nc ue e/ d The AN48840B is a Hall ICs (a magnetic sensor) which has 2 times

lt4054

Abstract: OCP2023 mp1423 OCP2030 GA8513 OCP2020 Li-ion charger LT4054 MP1410 ocp3601 ocp8020
Contextual Info: Orient-Chip Semiconductor Co., Ltd Products cross reference Hall Sensor Competitor Part Number Infineon TLE4913 Allegro A3212 Melexis MLX90248 Anachip AH180 ANPEC APX9132 Honeywell SS40 Melexis US1881 Panasonic DN6851 Asahi Kasei EW512 Asahi Kasei EW732 OCS Part