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    HALL EFFECT SWITCH SENSOR Search Results

    HALL EFFECT SWITCH SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HALL EFFECT SWITCH SENSOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hall effect sensor 4 pin

    Abstract: HALL ELEMENT Hall IC Switch hall sensor 40 L 0114b hall effect sensor 1816 "battery protection" A 27631 hall effect sensor 4 pin ic hall magnetic bipolar
    Text: 3134 LOW-HYSTERESIS BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION Data Sheet 27631.4* 3134 BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION X This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for


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    TLE4906L

    Abstract: No abstract text available
    Text: High Precision Hall-Effect Switch Target Specification TLE4906L Version Date: Page 1.6 2003/02/21 1 of 9 Target Specification High Precision Hall-Effect Switch TLE4906L Version 1.6 High Precision Hall-Effect Switch Target Specification TLE4906L Version Date:


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    PDF TLE4906L TLE4906L

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    Abstract: No abstract text available
    Text: High Precision Hall-Effect Switch Target Specification TLE4906H Version Date: Page 1.5 2003/01/15 1 of 9 Target Specification High Precision Hall-Effect Switch TLE4906H Version 1.5 High Precision Hall-Effect Switch Target Specification TLE4906H Version Date:


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    PDF TLE4906H

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD443H HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage


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    PDF CYD443H CYD443H D-85464

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    Abstract: No abstract text available
    Text: High Precision Hall-Effect Switch Target Specification TLE4906L Version Date: Page 1.5 2003/01/15 1 of 9 Target Specification High Precision Hall-Effect Switch TLE4906L Version 1.5 High Precision Hall-Effect Switch Target Specification TLE4906L Version Date:


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    PDF TLE4906L

    SMD Hall

    Abstract: TLE4906H
    Text: High Precision Hall-Effect Switch Target Specification TLE4906H Version Date: Page 1.6 2003/02/21 1 of 9 Target Specification High Precision Hall-Effect Switch TLE4906H Version 1.6 High Precision Hall-Effect Switch Target Specification TLE4906H Version Date:


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    PDF TLE4906H SMD Hall TLE4906H

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD3144 Hall Effect Switch ICs CYD3144E/L Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,


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    PDF CYD3144 CYD3144E/L D-85464

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD3144E Hall Effect Switch ICs CYD3144E Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,


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    PDF CYD3144E CYD3144E D-85464

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD443H Unipolar HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage


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    PDF CYD443H CYD443H D-85464

    Untitled

    Abstract: No abstract text available
    Text: 2-Wire High Precision Hall-Effect Switch Target Specification TLE4976L Version Date: Page 1.5 2003/01/15 1 of 9 Target Specification 2-Wire High Precision Hall-Effect Switch TLE4976L Version 1.5 2-Wire High Precision Hall-Effect Switch Target Specification


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    PDF TLE4976L

    TLE4976L

    Abstract: No abstract text available
    Text: 2-Wire High Precision Hall-Effect Switch Target Specification TLE4976L Version Date: Page 1.6 2003/02/21 1 of 9 Target Specification 2-Wire High Precision Hall-Effect Switch TLE4976L Version 1.6 2-Wire High Precision Hall-Effect Switch Target Specification


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    PDF TLE4976L TLE4976L

    Untitled

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,


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    PDF CYD3141E CYD3141E D-85464

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,


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    PDF CYD3141E CYD3141E D-85464

    EW-667

    Abstract: EW-6671
    Text: AsahiKASEI Hall Effect Switch EW-667 series 【New】 EW-6671 【New】 EW-6672 http://www.asahi-kasei.co.jp/ake HALL EFFECT SWITCH EW-6671, EW-6672 ♦FEATURES • Ultra-sensitive Hall effect SWITCH.………Non-contact magnetic switch • Suitable for battery operation………Vdd=2.4V to 3.3V


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    PDF EW-667 EW-6671 EW-6672 EW-6671, EW-6672) EW66712CE06

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    Abstract: No abstract text available
    Text: AH1801 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • • AH1801 is a Micropower, Ultra-sensitive Hall Effect Switch, which is with two Hall effect plates and a output driver, mainly designed


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    PDF AH1801 AH1801

    43a Hall Effect Magnetic Sensors

    Abstract: X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard
    Text: HALL EFFECT SENSING AND APPLICATION MICRO SWITCH Sensing and Control 7DEOH RI &RQWHQWV Chapter 1 • Hall Effect Sensing Introduction . 1


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    PDF 005715-2-EN 43a Hall Effect Magnetic Sensors X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard

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    Abstract: No abstract text available
    Text: IH Series HALL EFFECT Benefits - switch and linear version - 5 million cycle - low behind panel depth - IP67 sealing MARTINEZ Sébastien Marketing APEM S.A.S www.apem.com Version 4 31/03/10 IHS AND IHL Series IH series - Hall Effect HALL EFFECT Hall effect = contactless => long life


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    PDF where10V 1000Mhz. IEC/EN61000-4-3 UL94-V0 AWG26

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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E Hall-effect switch integrated circuits is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an


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    PDF CYD3141E CYD3141E D-85464

    ME105

    Abstract: No abstract text available
    Text: HALL EFFECT IC SWITCH CRO ME105 HALL-EFFECT SWITCH This Hall-effect switch is stress-resistants sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. The device includes a voltage regulator, Hall voltage generator, signal amplifier, Schmitt trigger and open-collector


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    PDF ME105 Oct-98 ME105

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    Abstract: No abstract text available
    Text: HALL EFFECT IC SWITCH CRO CS1018 HALL-EFFECT SWITCH This Hall-effect switch is stress-resistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. The device includes a voltage regulator, Hall voltage generator, signal amplifier, Schmitt trigger and opencollector output on a single silicon chip. The on-board regulator permits operation with supply voltages of 3.6


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    PDF Vcc-12 CL-20uF CS1018 Dec-98

    20uf

    Abstract: No abstract text available
    Text: CRO CS1018 HALL-EFFECT SWITCH HALL EFFECT IC SWITCH This Hall-effect switch is stress-resistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. The device includes a voltage regulator, Hall voltage generator, signal amplifier, Schmitt trigger and opencollector output on a single silicon chip. The on-board regulator permits operation with supply voltages of 3.6


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    PDF Dec-98 20uf

    20uf

    Abstract: CS1018 Hall-Effect Switch
    Text: M CS1018 HALL-EFFECT SWITCH HALL EFFECT IC SWITCH This Hall-effect switch is stress-resistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. The device includes a voltage regulator, Hall voltage generator, signal amplifier, Schmitt trigger and opencollector output on a single silicon chip. The on-board regulator permits operation with supply voltages of 3.6


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    PDF CS1018 20uf Hall-Effect Switch

    Untitled

    Abstract: No abstract text available
    Text: 3130 HALL-EFFECT SWITCH This Hall-effect switch is a highly temperature stable and stressresistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


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    PDF UGS3030T/U UGN3130UA

    UGN-3140

    Abstract: No abstract text available
    Text: 3140 HALL-EFFECT SWITCH This Hall-effect switch is a highly temperature stable and stressresistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


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    PDF UGS3040T/U UGN3140UA UGN-3140