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    HALL CIRCUIT TRANSISTOR Search Results

    HALL CIRCUIT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HALL CIRCUIT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hall sensor 40 L

    Abstract: No abstract text available
    Text: Hall ICs DN8797MS-A 3 V operation Hall IC • Overview 0.65 ± 0.15 Unit: mm The DN8797MS-A is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation circuit which are integrated on a single chip with a fine


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    PDF DN8797MS-A DN8797MS-A hall sensor 40 L

    DN8799MS

    Abstract: No abstract text available
    Text: Hall ICs DN8799MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8799MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8799MS DN8799MS

    DN8798MS

    Abstract: hall sensor field measuring
    Text: Hall ICs DN8798MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8798MS DN8798MS hall sensor field measuring

    DN8798MS

    Abstract: hall current sensor ic
    Text: Hall ICs DN8798MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8798MS DN8798MS hall current sensor ic

    hall current sensor ic

    Abstract: hall ic
    Text: Hall ICs DN8796MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8796MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8796MS DN8796MS hall current sensor ic hall ic

    DN8799MS

    Abstract: No abstract text available
    Text: Hall ICs DN8799MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8799MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8799MS DN8799MS

    hall sensor Panasonic

    Abstract: DN8796MS
    Text: Hall ICs DN8796MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8796MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8796MS DN8796MS hall sensor Panasonic

    DN8797MS

    Abstract: No abstract text available
    Text: Hall ICs DN8797MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8797MS-A is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8797MS DN8797MS-A DN8797MS

    DN8798MS

    Abstract: No abstract text available
    Text: Hall ICs DN8798MS 3 V operation Hall IC Alternating magnetic field operation Unit: mm 2.80 +0.20 –0.30 1.50 +0.25 –0.05 0.95 0.65±0.15 1 0.95 2.90 +0.20 –0.05 1.90±0.20 0.65±0.15 The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit,


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    PDF DN8798MS DN8798MS

    DN8798MS

    Abstract: No abstract text available
    Text: Hall ICs DN8798MS 3 V operation Hall IC Alternating magnetic field operation Unit: mm 2.80 +0.20 –0.30 1.50 +0.25 –0.05 0.95 0.65±0.15 1 0.95 2.90 +0.20 –0.05 1.90±0.20 0.65±0.15 The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit,


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    PDF DN8798MS DN8798MS

    Untitled

    Abstract: No abstract text available
    Text: Hall ICs DN8798MS 3 V operation Hall IC Alternating magnetic field operation Unit: mm 2.80 +0.20 –0.30 1.50 +0.25 –0.05 0.95 0.65±0.15 1 0.95 2.90 +0.20 –0.05 1.90±0.20 0.65±0.15 The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit,


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    PDF DN8798MS DN8798MS 10onductor

    hall sensor 40 L

    Abstract: No abstract text available
    Text: Hall ICs DN8797MS-A 3 V operation Hall IC • Overview M Di ain sc te on na tin nc ue e/ d 0.40 +– 0.10 0.05 0.65 ± 0.15 Unit: mm The DN8797MS-A is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation


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    PDF DN8797MS-A DN8797MS-A hall sensor 40 L

    PHOTO TRANSISTOR 940nm to-18

    Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
    Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,


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    PDF CND0204ACT-ND CND0215ACT-ND CND0208ACT-ND CND0214ACT-ND CND0209ACT-ND CND0216ACT-ND CND0204ATR-ND CND0215ATR-ND CND0208ATR-ND CND0214ATR-ND PHOTO TRANSISTOR 940nm to-18 cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND

    TRIAC 40669

    Abstract: hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor
    Text: Application Note 27701B* HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


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    PDF 27701B* 362-A TRIAC 40669 hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor

    N140 ALLEGRO

    Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000
    Text: Application Note 27703.1B GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


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    PDF 1-508-ALLEGRO N140 ALLEGRO HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000

    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: GH sc-59 to-92 hall sensor ultrasonic range meter IC Ultrasonic welding circuit transistor Common collector configuration thermoset plastics Application Note 27703 HALL EFFECT TO 92 leadframe
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


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    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: hall effect sensor GH SC-59 HALL EFFECT Loctite 406 LT HALL SENSOR to-92 hall sensor Ultrasonic welding circuit
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


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    vane air flow sensor

    Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503
    Text: Application Note 27701B* APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


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    PDF 27701B* 362-A vane air flow sensor pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503

    61A hall

    Abstract: gaussmeter 27701 4 pin hall effect AC CURRENT TESLA Manufacturer 27701-AN ALLEGRO U PACKAGE AN 27701 triac contactless AC main detector Sensor
    Text: Application Information Hall-Effect IC Applications Guide Allegro MicroSystems uses the latest integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches and sensor ICs with the


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    PDF 27701-AN, 61A hall gaussmeter 27701 4 pin hall effect AC CURRENT TESLA Manufacturer 27701-AN ALLEGRO U PACKAGE AN 27701 triac contactless AC main detector Sensor

    XM18-3008PMU

    Abstract: SM12-31010NA PR12-4DN XM18-3008PMI XM30-3015PMU SM8-31010NA SM12-31010PA PR12-4DP LM12-4004A G50-3A30JC
    Text: Sensor 1- Hall Sensor Hall Sensor Brief introduction SM series Hall sensor is a kind of magnet-sensitive sensor consisting of voltage regulator, Hall voltage generator, differential amplifier, Schmidt trigger and the output pole of collector open circuit. Its input is the magnetic flux density. The output is adigital voltage signal.


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    PDF 24VDC XM18-3008PMU SM12-31010NA PR12-4DN XM18-3008PMI XM30-3015PMU SM8-31010NA SM12-31010PA PR12-4DP LM12-4004A G50-3A30JC

    TB6586

    Abstract: TB6586FG Hall amplifier TB6586AFG HW-P
    Text: TB6586FG/AFG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6586FG, TB6586AFG Three-Phase Full-Wave Brushless Motor Controller Features • Upper-phase PWM control • Built-in triangular-wave generator • Support of a bootstrap circuit • Built-in Hall amplifier support of a Hall element


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    PDF TB6586FG/AFG TB6586FG, TB6586AFG TB6586FG TB6586AFG TB6586FG: TB6586 Hall amplifier HW-P

    A3186

    Abstract: 3141 thru 3144 application note "battery protection" A3187 LT HALL SENSOR TO-243AA A3185 A3185SLL A3188 A3189
    Text: THRU HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible through a novel Schmitt trigger circuit that


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    13A hall sensor

    Abstract: LT HALL SENSOR A3187 A3188 A3189 A3185 A3185SLL A3186 0114B
    Text: THRU HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible through a novel Schmitt trigger circuit that


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    741C op amp

    Abstract: samco UGN3501 ates 2n3055 ugn3501 equivalent GN3503 40669 Triac 3503 allegro hall effect Magnetic Tachometer with ug*3503 UGN3120U
    Text: APPLICATIONS INFORMATION HALL EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall effect ICs. These are contactless, magnetically activated switches


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    PDF to/732-2822 225-4N 741C op amp samco UGN3501 ates 2n3055 ugn3501 equivalent GN3503 40669 Triac 3503 allegro hall effect Magnetic Tachometer with ug*3503 UGN3120U