marking KR 4pin
Abstract: 4 pin hall marking
Text: MA111 GaAs Hall Elements OH004 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic
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MA111
OH004
150mV
marking KR 4pin
4 pin hall marking
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hall marking D
Abstract: No abstract text available
Text: MA111 GaAs Hall Elements OH010 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic
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MA111
OH010
105mV
hall marking D
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hall sensor 4-pin
Abstract: KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin
Text: GaAs Hall Devices OH10008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
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OH10008
hall sensor 4-pin
KH5 25
hall
OH10008
hall sensor 4pin
4 pin hall sensor
hall 4 pins
4 pin package hall sensor
hall ic 4pin
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OH008
Abstract: 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin
Text: MA111 GaAs Hall Elements OH008 GaAs hall element Unit : mm ● Input resistance : typ. 0.75kΩ 3 2 0.6±0.1 0.8±0.1 2.85±0.25 ● Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C
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MA111
OH008
105mV
OH008
4pin hall sensor
hall sensor ic 4pin
hall ic 4pin
hall sensor 4pin
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hall sensor 3hr
Abstract: hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R
Text: GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10003
hall sensor 3hr
hall sensor 4-pin
phonograph
hall sensor 4pin
marking KR 4pin
4 pin hall marking
OH10003
4 pin hall marking R
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hall sensor 4-pin
Abstract: hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking
Text: GaAs Hall Devices OH10009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10009
hall sensor 4-pin
hall sensor ic 4pin
hall sensor 4pin
hall 4 pins
KH5 25
OH10009
4 pin hall 6
4 pin hall marking
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hall sensor 3hr
Abstract: marking KR 4pin OH003 OH10003 hall sensor TYP 688 panasonic device marking examples
Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10003
OH003)
hall sensor 3hr
marking KR 4pin
OH003
OH10003
hall sensor TYP 688
panasonic device marking examples
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OH008
Abstract: OH10008 hall sensor Panasonic GaAs
Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
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OH10008
OH008)
OH008
OH10008
hall sensor Panasonic GaAs
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hall 96a
Abstract: 80 L hall effect sensor 3 pin hall+96a
Text: A1233 Dual Channel Hall Effect Direction Detection Sensor IC Features and Benefits Description Precisely aligned dual Hall elements Tightly matched magnetic switchpoints Speed and direction outputs Individual Hall element outputs L package Output short circuit protection
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A1233
A1233
hall 96a
80 L hall effect sensor 3 pin
hall+96a
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OH009
Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor
Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the
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OH10009
OH009)
OH009
OH10009
hall sensor Panasonic GaAs
4pin hall sensor
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hall sensor 4pin
Abstract: marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall
Text: GaAs Hall Devices OH10004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage
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OH10004
hall sensor 4pin
marking KR 4pin
hall 4hr
4 pin hall marking R
4HR hall
4pin hall sensor
OH10004
4 pin hall 6
hall ic 4pin
4pin hall
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A3144
Abstract: Current sensor and Hall sensor HALL-EFFECT SWITCHES
Text: HALL-EFFECT SENSORS 610 THRU 640 HALL-EFFECT SUBASSEMBLIES The ATS610 through ATS640 series of devices are optimized Hall-effect IC/magnet combinations that provide complex sensing functions in small packages. See page 11 for a complete listing of devices.
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ATS610
ATS640
ATS63x
AH-006-5
ATS612JSB
UGQ5140K
FH-001
A3144
Current sensor and Hall sensor
HALL-EFFECT SWITCHES
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ic 3524 pin diagram
Abstract: A3212ELH UGN3235K UGN3503U A3056EU A3056LU A3058EU A3058LU ATS610 ATS612JSB
Text: HALL-EFFECT SENSORS 610 THRU 640 HALL-EFFECT SUBASSEMBLIES The ATS610 through ATS640 series of devices are optimized Hall-effect IC/magnet combinations that provide complex sensing functions in small packages. See page 11 for a complete listing of devices.
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ATS610
ATS640
ATS63x
AH-006-5
ATS612JSB
FH-001
ic 3524 pin diagram
A3212ELH
UGN3235K
UGN3503U
A3056EU
A3056LU
A3058EU
A3058LU
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ic 3524 internal block diagram
Abstract: ic 3524 pin diagram ic 4518 applications ic 3525 internal block diagram magnetic transducers "Hall Effect Sensors" A3056EU UGN3235K A3056LU A3058EU
Text: HALL-EFFECT SENSORS 535 THRU 640 HALL-EFFECT SUBASSEMBLIES The ATS535 through ATS640 series of devices are optimized Hall-effect IC/magnet combinations that provide complex sensing functions in small packages. See page 11 for a complete listing of devices.
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ATS535
ATS640
ATS63x
AH-006-5
ATS612JSB
FH-001
ic 3524 internal block diagram
ic 3524 pin diagram
ic 4518 applications
ic 3525 internal block diagram
magnetic transducers
"Hall Effect Sensors"
A3056EU
UGN3235K
A3056LU
A3058EU
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Untitled
Abstract: No abstract text available
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description Two matched Hall effect switches on a single substrate 1 mm Hall element spacing Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
A1230
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marking KR 4pin
Abstract: OH004 OH10004
Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage
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OH10004
OH004)
marking KR 4pin
OH004
OH10004
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Untitled
Abstract: No abstract text available
Text: MA111 GaAs Hall Elements OH10017 OH017 GaAs hall element Input resistance : typ. 2kΩ(min. 1.5kΩ) 3 2 ● Mini thin type (4-pin) package. Automatic insertion through taping and magazine possible. • Applications Various hall motor . Low current dissipation type
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MA111
OH10017
OH017)
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A1230
Abstract: IPC7351 SOIC127P600X175-8M BURR
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
A1230
IPC7351
SOIC127P600X175-8M
BURR
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A1230LLTR-T
Abstract: A1230 2A1230
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
A1230LLTR-T
2A1230
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A1230
Abstract: No abstract text available
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
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hall sensor 4-pin
Abstract: hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9
Text: GaAs Hall Devices OH10010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)
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OH10010
hall sensor 4-pin
hall sensor 4pin
4pin hall sensor
hall sensor ic 4pin
4 pin hall sensor
hall 4pin
4pin hall
hall
hall 4 pins
hall 9
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IR Sensor alarm circuit
Abstract: LT202A sharp tv LT202
Text: Hall [C LT202A GaAs Hall IC for Fan Motor LT202A • Features ■ Outline Dimensions Increasing the efficiency of motor rotation due to cutting the electric current which doesn’t contributing to rotation ● Combining a ;aAs Hall device and a driver IC in a
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LT202A
IR Sensor alarm circuit
LT202A
sharp tv
LT202
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A1230
Abstract: A1230LK-T SOIC127P600X allegro 80 L
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
A1230LK-T
SOIC127P600X
allegro 80 L
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A1230
Abstract: A-1230 IPC7351 SOIC127P600X175-8M A1230LK-T
Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology
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A1230
A1230
A-1230
IPC7351
SOIC127P600X175-8M
A1230LK-T
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