HA 431 TRANSISTOR Search Results

HA 431 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

HA 431 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3442 Abstract: E271 2n4347 Text: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment	OCR Scan	2N3442, 2N4347 2N4347) 2N3442) 2N3442 2N4347. 2N3442. E271	PDF
Untitled Abstract: No abstract text available Text: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage	OCR Scan	A23b320 Q62702-F585 Q62702-F1059 23b320 102mA	PDF
ha 431 transistor Abstract: 2SD2396 2SD 431 TRANSISTOR a 431 transistor n 431 transistor transistor 431 N Text: 2SD2396 Transistor, NPN Features Dimensions Units : mm • available in TO-220FN package • high dc current gain (hFE), typically hFE =1000 • low collector saturation voltage, typically VCE(sat) = 0.3 V at lc /lB = 2 A/ 0.05 A 2SD2396 (TO-22QFN) ¿ 3 .2 ±0.2	OCR Scan	2SD2396 O-220FN T0-220FP O-22QFN) 2SD2396 ha 431 transistor 2SD 431 TRANSISTOR a 431 transistor n 431 transistor transistor 431 N	PDF
Untitled Abstract: No abstract text available Text: SOT223 NPN SILICON PLANAR HIGH CURREI HIGH PERFORMANCE TRANSISTORS I I ISSUE 2 - OCTOBER 1995_ FEATURES * * * * FZT851 FZT853 Extremely low equ ¡valent on-resistance; RcEtnt\| 44mQ at 5A 6 Amps continuous current, up to 20 Amps peak current	OCR Scan	OT223 FZT851 FZT853 FZT951 FZT953	PDF
d947 Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951 Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically	OCR Scan	023SbOS BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 fl23SbGS 000436b d947 d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors	OCR Scan	MGSF1P02LT1	PDF
bf451 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D bb53^31 D0E7bT4 STS H A P X J j BF450 BF451 V HF SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a plastic envelope intended for HF and IF applications in radio receivers, especially for mixer stages in AM receivers and IF stages in AM/FM receivers with negative earth.	OCR Scan	BF450 BF451 BF45ax. bf451	PDF
ha 431 transistor Abstract: BSP122 UBB073 transistor 431 N Text: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching	OCR Scan	BSP122 OT223 0to10 ha 431 transistor BSP122 UBB073 transistor 431 N	PDF
Untitled Abstract: No abstract text available Text: D73F5T1, D73F5T2 File Number 2367 HARRIS SErilCOND SECTOR SbE D 43D2271 G04DflbE STS T -3 7 -/S 5-Ampere Silicon P-N-P Power Transistors TERMINAL DESIGNATION Features: • Low I / c e sat ■ Fast switching speed m Complementary to D72F5T1,2 The D73F5T1 and D73F5T2 silicon p-n-p power transistors	OCR Scan	D73F5T1, D73F5T2 43D2271 G04DflbE D72F5T1 D73F5T1 D73F5T2 O-251	PDF
SILICON TRANSISTOR CORP Abstract: h a 431 transistor Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	SNF40404 ST102 MIL-S-19500 SILICON TRANSISTOR CORP h a 431 transistor	PDF
f585 Abstract: bfn21 62702-F585 transistor sl 431 Text: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking	OCR Scan	62702-F585 62702-F1059 f585 bfn21 62702-F585 transistor sl 431	PDF
ha 431 transistor Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag Text: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for	OCR Scan	27B2S BRY39 10kii 7Z611S0 7Z61149 27fl3b ha 431 transistor BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 transistor ag	PDF
BCw610 Abstract: transistor marking code 431 BCW61B Text: Philips Semiconductors Product specification PNP general purpose transistors BCW61 series PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.	OCR Scan	BCW61 BCW60. BCW61A BCW61B BCW61C BCW610 8CW61C BCw610 transistor marking code 431	PDF
f 0472 N-Channel MOSFET Abstract: hrf3205 mosfet HRF3205 Text: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	HRF3205, HRF3205S HRF3205S f 0472 N-Channel MOSFET hrf3205 mosfet HRF3205	PDF

BUZ41A Abstract: No abstract text available Text: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR\|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	2S473S BUZ41A O-220AB ES473S GG14t. T-39-11 BUZ41A	PDF
ha 431 transistor Abstract: PZTA44 PZTA45 Text: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a	OCR Scan	00EL017 PZTA44; PZTA45 OT223 OT223 PZTA44 PZTA45= PZTA44 ha 431 transistor PZTA45	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax	OCR Scan	O-220 C67078-S1318-A2	PDF
ha 431 transistor Abstract: No abstract text available Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.	OCR Scan	BU2727AX ha 431 transistor	PDF
14N50 Abstract: STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F Text: 7 ^ 2 3 7 Ü Ü M S 'iS l b ö T « S Ü T H Gl SGS-THOMSON i^OTi «S STH14N50/FI STW14N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 14N50 S TH 14N50FI STW 14N50 . . • . ■ ■ V dss RDS on Id 500 V 500 V 500 V < 0.45 £2 < 0.45 £2 < 0.45 n	OCR Scan	14N50 14N50FI 14N50 STH14N50/FI STW14N50 VGS-10V STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F	PDF
sd 431 transistor Abstract: No abstract text available Text: S IE M E N S SIPMOS Small-Signal Transistor BSS 91 VDS = 240 V /D = 0.35 A ^DS on = 6-0 A • N channel • Enhancem ent mode • Package: T O -1 8 ') Type Ordering code for version in bulk BSS 91 Q 62702 -S 45 7 Maximum Ratings Parameter Symbol Values	OCR Scan		PDF
BD618 Abstract: BD 202 transistors Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically	OCR Scan	623Sb BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 612/BD 614/BD BD618 BD 202 transistors	PDF
BUK627-400A Abstract: BUK627-400B ha 431 transistor transistor 431 N Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.	OCR Scan	BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N	PDF
UFN432 Abstract: mosfet UFN432 UFN 432 UFN431 UFN433 Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.	OCR Scan	UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433	PDF
BUK445-100A Abstract: BUK445-100B 100-P BUK445 PQ25-C Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • 1^53^31 DD3DSSS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	bbS3T31 BUK445-100A/B -SOT186 BUK445 -100B BUK445-100A BUK445-100B 100-P PQ25-C	PDF

HA 431 TRANSISTOR Search Results

HA 431 TRANSISTOR Result Highlights (5)

HA 431 TRANSISTOR Datasheets Context Search

2N3442

Untitled

ha 431 transistor

Untitled

d947

Untitled

bf451

ha 431 transistor

Untitled

SILICON TRANSISTOR CORP

f585

ha 431 transistor

BCw610

f 0472 N-Channel MOSFET

BUZ41A

ha 431 transistor

Untitled

ha 431 transistor

14N50

sd 431 transistor

BD618

BUK627-400A

UFN432

BUK445-100A