2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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transistor h9
Abstract: H9 sot 23 H9 transistor marking LDTC124GLT1G H922
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC124GLT1G
OT-23
transistor h9
H9 sot 23
H9 transistor marking
LDTC124GLT1G
H922
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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H9 transistor marking
Abstract: LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTC124GWT1G
H9 transistor marking
LDTC124GWT1G
transistor h9
MARKING H9
h922
h9 MARKING
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SC8810
Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
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SC-88,
SC-74
lea50
SC-88
SC8810
transistor h9
DTC124EK equivalent
DI-74
H9 transistor marking
DTC114TK
dtc143tk
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rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
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113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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SOT363 marking code H9
Abstract: H9 transistor marking transistor h9 H9 SOT363 PIMH9 PUMD9
Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ‚ R2 = 47 kΩ Product specification Supersedes data of 2001 Nov 07 2003 Sep 15 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;
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SCA75
613514/03/pp9
SOT363 marking code H9
H9 transistor marking
transistor h9
H9 SOT363
PIMH9
PUMD9
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CHEMH9GP
Abstract: H9 transistor marking
Text: CHENMKO ENTERPRISE CO.,LTD CHEMH9GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTC114Y
100OC
-40OC
50m100m
CHEMH9GP
H9 transistor marking
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H9 transistor marking
Abstract: transistor h9
Text: CHENMKO ENTERPRISE CO.,LTD CHEMH9PT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTC114Y
100OC
-40OC
50m100m
H9 transistor marking
transistor h9
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SOT363 marking code H9
Abstract: PIMH9 PUMD9
Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Sep 15 2004 Apr 14 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;
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SCA76
R75/04/pp9
SOT363 marking code H9
PIMH9
PUMD9
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PIMH9
Abstract: PUMD9
Text: DISCRETE SEMICONDUCTORS DAT PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 15 2004 Apr 14 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
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R75/04/pp9
PIMH9
PUMD9
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SOT363 marking code H9
Abstract: PIMH9 PUMD9
Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 15 2004 Apr 14 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors;
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R75/04/pp9
SOT363 marking code H9
PIMH9
PUMD9
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MARKING H9
Abstract: transistor h9 H9 transistor marking
Text: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH9 (SC-107C) SMT6
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100mA
SC-107C)
OT-353
SC-88)
DTC114Y
R1120A
MARKING H9
transistor h9
H9 transistor marking
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Untitled
Abstract: No abstract text available
Text: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures 1) Built-In Biasing Resistors.
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100mA
100mA
DTC114Y
R1120A
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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transistor h9
Abstract: PIMH9
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
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M3D302
SCA73
613514/01/pp8
transistor h9
PIMH9
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2d6 transistor
Abstract: TRANSISTOR MARKING 1d8
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
2d6 transistor
TRANSISTOR MARKING 1d8
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RN2911FS
Abstract: RN1910FS RN1911FS RN2910FS H9 transistor marking
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications C B 2 5 3 4 +0.02 0.48 -0.04 Equivalent Circuit and Bias Resistor Values
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RN2910FS
RN2911FS
RN2910FS,
RN1910FS
RN1911FS
RN2911FS
RN1911FS
H9 transistor marking
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Untitled
Abstract: No abstract text available
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FS,RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 package. C B fS6 E Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
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RN2910FS
RN2911FS
RN1910FS,
RN1911FS
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transistor equivalent table
Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor
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CHEMG11PT
CHDTC124E
CHDTC144E
CHDTC114Y
CHDTC143Z
CHDTC114E
transistor equivalent table
NPN PNP sot-563
sc74a
A6 MARKING SC-74
BD NPN transistors
transistor fg 680 gd
marking H6 sot 23
SOT-353 MARKING G2
SC-88A npn
SC-74 H2
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TRANSISTOR MARKING 707
Abstract: H9 transistor marking transistor h9
Text: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I
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SC-74)
DTC114YKA)
SC-70)
SC-59)
TRANSISTOR MARKING 707
H9 transistor marking
transistor h9
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H9 transistor marking
Abstract: transistor h9
Text: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V
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2SA1807F5
SC-63)
A/-60
2SA1807F5
H9 transistor marking
transistor h9
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