H2A TRANSISTOR Search Results

A608 transistor pnp

Abstract: transistor A608 A608 A608 transistor bta608 pnp transistor a608 BTA608A3 bta60 C306A BTA6
Contextual Info: Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA608A3 Features • The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

C945 pin spec

Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
Contextual Info: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.

n6718

Abstract: NPN transistor ECB TO-92 IC350 IC35 H2A transistor
Contextual Info: Spec. No. : C823A3 Issued Date : 2006.10.16 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features

NH10

Abstract: BTNH10A3
Contextual Info: Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date :2006.08.16 Page No. : 1/5 CYStech Electronics Corp. VHF/UHF NPN Epitaxial Planar Transistor BTNH10A3 Description The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

a733 transistor

Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
Contextual Info: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

transistor h2a

Abstract: diode marking H2 H2N5089
Contextual Info: HI-SINCERITY Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMPSH10

Abstract: HA2001
Contextual Info: HI-SINCERITY Spec. No. : HA200105 Issued Date : 2000.11.01 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

transistor h2a

Abstract: HSB564A
Contextual Info: HI-SINCERITY Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB564A is designed for general purpose low frequency power amplifier applications.

HBF422

Contextual Info: HI-SINCERITY Spec. No. : HE6404 Issued Date : 1993.03.18 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures

transistor h2a

Abstract: diode marking H2 vbe 10v, vce 500v NPN Transistor HTL145 HE645
Contextual Info: HI-SINCERITY Spec. No. : HE6454 Issued Date : 1993.02.24 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HTL145 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTL145 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

c351a

Abstract: N4401 DTC114 DTA114EA3 DTC114E DTC114EA3
Contextual Info: Spec. No. : C351A3 Issued Date : 2003.08.20 Revised Date :2003.09.29 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTC114EA3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

OC 140 germanium transistor

Abstract: HSD879 Germanium Transistor transistor h2a
Contextual Info: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor

700 H2A

Abstract: HE9018
Contextual Info: HI-SINCERITY Spec. No. : HE6120 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HE9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner.

HA3669

Abstract: transistor ha3669 diode marking H2
Contextual Info: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching

HE8550

Contextual Info: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull

SD965

Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
Contextual Info: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings

Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

Contextual Info: HI-SINCERITY Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. TO-92 Absolute Maximum Ratings

Contextual Info: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

ht-666

Abstract: transistor h2a HT666 HE6464
Contextual Info: HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

Contextual Info: HI-SINCERITY Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4126 is designed for general purpose switching and amplifier applications. TO-92

transistor h2a

Abstract: HMPSA56 H2A transistor HE631
Contextual Info: HI-SINCERITY Spec. No. : HE6311 Issued Date : 1992.09.09 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSA56 PNP SILICON TRANSISTOR Description Amplifier transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

ha2001

Abstract: HBC558 transistor BC 245 c
Contextual Info: HI-SINCERITY Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.