H11B1 V Search Results

H11B1

Abstract: H11B3
Contextual Info: MOTOROLA Order this document by H11B1/D SEMICONDUCTOR TECHNICAL DATA H11B1 * [CTR = 500% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output Low Input Current H11B3 [CTR = 100% Min] *Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting

optocouplers H11B1

Contextual Info: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR Minimum at lf = 1 mA H11B1, 500% H11B2,200% H11B3,100% * Withstand Teat Voltage, 7500 Volt * Coupling Capacitance, 0.5 pF * Underwriters Lab File #E52744 * VDE Approval «0884 Optional with Option 1, add -X001 Suffix

H11B1

Abstract: H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

optocoupler H11b1

Abstract: H11B1 H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 PHOTODARLINGTON OPTOCOUPLER FEATURES • CTR Minimum at IF = 1 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VACRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

optocoupler H11b1

Abstract: H11B1 H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

H1101

Abstract: lf 335
Contextual Info: SIEMENS H11B1/H11B2/H11B3 PHOTODARUNGTON OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR Minimum at lF = 1 mA H11B1, 500% Pin One ID. (31 fgl H11B2, 200% H 1 1 B 3 ,100% • Isolation Test Voltage, 5300 VACRHS • Coupling Capacitance, 0.5 pF

H11B1

Abstract: H11B2 H11B3
Contextual Info: g y, , H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & VDE UL & ®®®® C6A 8e n BEMKO DEMKO NEMKO BABT GlobalOptotsotator 6-Pin D IP O ptoisolators Darlington Output Low Input Current H11B1* H11B3 [CTR • 500% Min] [CTR *100% Min] •Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting

DIN EN 50014 STANDARD

Abstract: H11B1 H11B1-X007 H11B2 H11B3 VDE0884
Contextual Info: H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC

H11B1-X007

Abstract: optocoupler H11b1 H11B1 DIN EN 50014 STANDARD H11B2 H11B3 VDE0884
Contextual Info: H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC

Contextual Info: H11B1/H11B2/H11B3 Infi ne on Photodarlington Optocoupler technologies Dimensions in inches mm pin one ID Î .248 (6.30) .256 (6.50) M axim um R atings E m itter Reverse V oltag e. 3.0 V Continuous Forward C urrent. 60 mA

Contextual Info: H11B1, H11B2, H11B3 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Material categorization:

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES

Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

til113

Abstract: EL 4N33 EL4N33 EL 4N32 marking CODE n3 6PIN H11BX 4N30 4N31 4N33 E214129
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

EL4N33

Abstract: H11BX 4N33 4N32 4n33 schematic 4N31 H11B1 4N29 4N30 E214129
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

marking CODE n3 6PIN

Abstract: EL4N33 SMD 6PIN IC MARKING CODE n3
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

Contextual Info: H11B1/ H11B2/ H11B3 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • Isolation test voltage, 5300 VRMS • Coupling capacitance, 0.5 pF Agency Approvals • UL - File No. E52744 System Code J • DIN EN 60747-5-2 VDE0884

H11B1-X007

Contextual Info: H11B1/ H11B2/ H11B3 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • Isolation test voltage, 5300 VRMS • Coupling capacitance, 0.5 pF Agency Approvals • UL - File No. E52744 System Code J • DIN EN 60747-5-2 VDE0884

marking CODE n3 6PIN

Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

E91231

Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
Contextual Info: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current