F4-75R12KS4
Abstract: igbt for HIGH POWER induction heating Eupec Power Semiconductors eupec module igbt IGBT EUPEC ECONOPACK induction heating igbt 2902 eupec power electronics products IGBT f4
Text: Press Release – May 2003 PCIM 2003 New IGBT H-Bridge family based on Econo module platform is designed for fast switching applications With the new family of H-Bridge configured Econo modules eupec offers a state-of-the-art IGBT solution for fast switching
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F4-75R12KS4
D-59581
igbt for HIGH POWER induction heating
Eupec Power Semiconductors
eupec module igbt
IGBT EUPEC
ECONOPACK
induction heating igbt
2902
eupec power electronics products
IGBT f4
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SLOS390
Abstract: s-pbga-n80
Text: DRV592 SLOS390 – NOVEMBER 2001 ±3-A HIGH-EFFICIENCY H-BRIDGE REQUIRES EXTERNAL PWM FEATURES D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz D D D D D DESCRIPTION The DRV592 is a high-efficiency, high-current H-bridge ideal for driving a wide variety of thermoelectric cooler
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DRV592
SLOS390
DRV592
SLOS390
s-pbga-n80
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TEC Driver
Abstract: TEC H bridge CDRH104R DRV591 DRV592 DRV592VFP DRV592VFPR SLMA002 S-PQFP-G32 pwm tec
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
TEC Driver
TEC H bridge
CDRH104R
DRV591
DRV592VFP
DRV592VFPR
SLMA002
S-PQFP-G32
pwm tec
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Untitled
Abstract: No abstract text available
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
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TEC Driver
Abstract: TEC H bridge CDRH104R DRV591 DRV592 DRV592VFP DRV592VFPR SLMA002 S-PQFP-G32 pwm control of tec
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
TEC Driver
TEC H bridge
CDRH104R
DRV591
DRV592VFP
DRV592VFPR
SLMA002
S-PQFP-G32
pwm control of tec
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Untitled
Abstract: No abstract text available
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
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Untitled
Abstract: No abstract text available
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
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Untitled
Abstract: No abstract text available
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
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DRV592VFP
Abstract: CDRH104R DRV591 DRV592 DRV592VFPR SLMA002 S-PQFP-G32 pwm control of tec
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
DRV592VFP
CDRH104R
DRV591
DRV592VFPR
SLMA002
S-PQFP-G32
pwm control of tec
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TEC Driver
Abstract: CDRH104R DRV591 DRV592 DRV592VFP DRV592VFPR SLMA002 S-PQFP-G32
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
TEC Driver
CDRH104R
DRV591
DRV592VFP
DRV592VFPR
SLMA002
S-PQFP-G32
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CDRH104R
Abstract: DRV591 DRV592 DRV592VFP DRV592VFPR SLMA002 S-PQFP-G32
Text: DRV592 www.ti.com SLOS390A – NOVEMBER 2001– REVISED MAY 2002 ±3ĆA HIGHĆEFFICIENCY HĆBRIDGE REQUIRES EXTERNAL PWM FEATURES DESCRIPTION D ±3-A Maximum Output Current D Requires External PWM From DC to 1 MHz The DRV592 is a high-efficiency, high-current H-bridge
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DRV592
SLOS390A
DRV592
CDRH104R
DRV591
DRV592VFP
DRV592VFPR
SLMA002
S-PQFP-G32
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ICE1HS01G
Abstract: TRANSISTOR D206 24V 5A SMPS circuit diagram LLC resonant transformer core pc47 SMPS CIRCUIT DIAGRAM 24v transistor NPN c115 24v 5a smps 24V SMPS 200w circuit smps resonant llc
Text: Application Note, V1.0, 22 April 2009 Application Note EVALHS-200W-ICE1HS01G 200W SMPS Evaluation Board using LLC Half Bridge Resonant Controller ICE1HS01G Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG
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EVALHS-200W-ICE1HS01G
ICE1HS01G
ICE1HS01G
TRANSISTOR D206
24V 5A SMPS circuit diagram
LLC resonant transformer
core pc47
SMPS CIRCUIT DIAGRAM 24v
transistor NPN c115
24v 5a smps
24V SMPS 200w circuit
smps resonant llc
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diagram LG LCD TV circuits
Abstract: resonant half bridge schematic zcs ICE1HS01G resonant half bridge schematic resonant full bridge schematic zcs LLC resonant full bridge schematic LLC resonant transformer LLC resonant converter transformer lg lcd tv POWER SUPPLY SCHEMATIC diagram power supply LG 32 in LCD TV circuits
Text: Application Note, V1.0, 12 August 2009 Application Note ANPS0031 -ICE1HS01G Half Bridge LLC Resonant Converter Design using ICE1HS01G Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG 81726 Munich, Germany
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ANPS0031
-ICE1HS01G
ICE1HS01G
diagram LG LCD TV circuits
resonant half bridge schematic zcs
ICE1HS01G
resonant half bridge schematic
resonant full bridge schematic zcs
LLC resonant full bridge schematic
LLC resonant transformer
LLC resonant converter transformer
lg lcd tv POWER SUPPLY SCHEMATIC
diagram power supply LG 32 in LCD TV circuits
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195uH
Abstract: No abstract text available
Text: KGEA-HB LF interior antenna shape h bridge 153x45x27mm 33 uH - 500 uH Lightning detector antennas Features - Transmitting low frequency. - LF emitter antenna assembly by method Ultrasonic Welding. - The connector integrated in the external housing plastic (waterproof connector).
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153x45x27mm
400VDC/250VAC
AEC-Q200
KGEA-HB-B-0195J
KGEA-HB-B-0500J
KGEA-HB-C-0426J
PBT-GF30%
195uH
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UDG-9S080
Abstract: No abstract text available
Text: y 1 Implication • INFO H available | UNITRODE UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 Phase Shift Resonant Controller FEATURES DESCRIPTION • Zero to 100% Duty Cycle Control The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the switching of one half-bridge with respect
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UC1875/6/7/8
UC2875/6/7/8
UC3875/6/7/8
10MHz
UC1875
UC1875.
UDG-9S080
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958b
Abstract: AS36 IFR 740 IRGTI120F06
Text: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
C-224
0DEDD14
958b
AS36
IFR 740
IRGTI120F06
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Untitled
Abstract: No abstract text available
Text: y U N IT R O D E H UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 FEATURES DESCRIPTION • Zero to 100% Duty Cycle Control • Programmable Output Turn-On Delay The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the switching of one half-bridge with respect
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UC1875/6/7/8
UC2875/6/7/8
UC3875/6/7/8
UC1875
UC1875.
001bl30
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DIODE C817
Abstract: DIODE C813 953B IRGTI050U06 C814 C817 C813
Text: International ï «k Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed 1GBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 2 5K H z hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
supplies817
IRGTI050U06
10OnH
C-818
DIODE C817
DIODE C813
953B
C814
C817
C813
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Untitled
Abstract: No abstract text available
Text: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"
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10KHz
IRGTI120F06
C-223
100nH
C-224
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IRGTI165F06
Abstract: c227 diode c230 diode
Text: PO9.950B biternational Rectifier IRGTI165F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • R u g ged Design •S im p le g ate-d rive .F a s t operation up to 1 0 K H z hard switching, or 5 0 K H z resonant .S w itch in g -L o s s Rating includes all “tail"
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IRGTI165F06
10KHz
50KHz
IRGTI165F06
100nH
C-230
S5452
002DG2Q
c227 diode
c230 diode
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ic laf 0001
Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
Text: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses
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IRGTI200F06
10KHz
50KHz
applicationI200F06
100nH
C-236
ic laf 0001
LAF 0001
laf 0001 power
IR LFN
IRGTI200F06
200A 600V FET
2S0240
50PCL
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IRGTI090U06
Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
Text: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"
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IRGTI090U06
25KHz
100KHz
C-823
IRGTI090U06
100nH
10-1NT-A-PAK
C-824
c823
1C00
954B
C824
c821 ls
IRGT1090U06
apak
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Diode C219
Abstract: resistance 220 ohm diode 1n6
Text: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
su513
IRGTI120F06
100nH
C-224
Diode C219
resistance 220 ohm
diode 1n6
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT Module Half-Bridge Configuration VII150-12G4 ^c dc VCES —150 A = 1200 V H ig h S h o rt C irc u it S O A C a p a b ility Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 MQ 1200 V VGES v GEM Continuous
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VII150-12G4
DD27c3
III50-12G4
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