Untitled
Abstract: No abstract text available
Text: B772S PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G Emitter Collector Base H J A D A B C D E F G H J K B K E C Millimeter
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B772S
10MHz
07-May-2010
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b772s
Abstract: B772S-R B772 400DA pnp Transistor TO92 5V 200mA
Text: B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank
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B772S
B772S-R
B772S-O
B772S-Y
B772S-GR
-10mA,
-200mA
-100mA,
10MHz
b772s
B772S-R
B772
400DA
pnp Transistor TO92 5V 200mA
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B772 equivalent
Abstract: tf b772
Text: @ LG Semicon. Co. LTD. Description Features The GMM7328210BS/SG is an 8M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7328210BS/SG is
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GMM7328210BS/SG
7328210BS/SG
GMM7328210BS/SG
GMM732821
GMM7328210BSG
H0BB757
B772 equivalent
tf b772
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B772 equivalent
Abstract: C817T3-H TRANSISTOR b772 b772 q b772 b772 p BTD8 BTB772T3 BTD882T3 B772 SPECIFICATION
Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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C817T3-H
BTB772T3
BTD882T3
BTB772T3/S
O-126
UL94V-0
B772 equivalent
C817T3-H
TRANSISTOR b772
b772 q
b772
b772 p
BTD8
BTB772T3
BTD882T3
B772 SPECIFICATION
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b772s
Abstract: BTB772SA3 BTD882SA3
Text: CYStech Electronics Corp. Spec. No. : C817A3-H Issued Date : 2003.05.31 Revised Date:2004.07.02 Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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C817A3-H
BTB772SA3
BTD882SA3
UL94V-0
b772s
BTB772SA3
BTD882SA3
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B772 equivalent
Abstract: b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp
Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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C817T3-H
BTB772T3/S
BTD882T3/S
O-126
UL94V-0
B772 equivalent
b772 to 126
b772 p
TRANSISTOR b772
B772 SPECIFICATION
pnp b772
BTB772T3S
complementary b772
B772
b772 pnp
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b772 p
Abstract: TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR
Text: CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A
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C817I3-H
BTB772I3
BTD882I3
O-251
Pw350s
UL94V-0
b772 p
TRANSISTOR b772 p
complementary b772
H B772
TO-251 B772
BTD8
b772
B772 SPECIFICATION
TRANSISTOR b772
B772 TRANSISTOR
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B772 P M 24
Abstract: D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361
Text: CD 137 PX Series 10 000 h at 85°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 400 ~ 550 Capacitance Range (µF)
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120Hz)
M6x12
M5x10
M8x16
CNN30M12
K100-ISO-50
K100-ISO-77
v2006
B772 P M 24
D551
A642
CD 137 capacitor
b774 transistor
B772 P 38
A643
B641
A771
A361
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b774 transistor
Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
Text: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)
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120Hz)
M6x12
M5x10
M8x16
CNN30M12
K100-ISO-50
K100-ISO-77
v2006
b774 transistor
c772
CNN30M12
Jianghai
k100
A642
A772
capacitor jianghai cd 138
K100-ISO-77
A643
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ib2c1
Abstract: sinus generator AN298 DIP28 PLCC28 TDB7711 TDB7722
Text: rZ 7 ^ 7# T D B 7711 T D B 7722 S G S -T H O M S O N SUBSCRIBER LINE INTERFACE C IR C U IT KIT • PROGRAMM ABLE DC FEEDING RESIS TANCE AND LIMITING CURRENT seven values ■ LONGITUDINAL BALANCE PERFORM ANCE : UP TO 63 dB ■ FOUR OPERATING MODES (power-down,
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OCR Scan
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TDB7711
TDB7722
TDB7711-TDB7722
H8BTDB7711-12
ib2c1
sinus generator
AN298
DIP28
PLCC28
TDB7711
TDB7722
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bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
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OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
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b772 q
Abstract: B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772
Text: TO-126 Plastic-Encapsulate Transistors^ B772 TRANSISTO R PNP F EATURES Power dissipation TO-126 1.25W (Tamb=25°C) P cm; C o llecto r current 1 .E M IT T E R I cm ; -3 A 2 .COLLECTOR -base voltage 3 . BASE V(BR)CBO: -4 0 V O perating and storage ju n ctio n tem perature range
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O-126
O-126
b772 q
B772 031
br b772
B772
BR 8772
H B772
CA 8772
transistor b772
B772 C S
transistor 8772
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B772Y
Abstract: B772-Y B772-GR B772O
Text: MCC TM Micro Commercial Components B772-R B772-O B772-Y B772-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 1.25Watts of Power Dissipation. Collector-current 3.0A
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B772-R
B772-O
B772-Y
B772-GR
25Watts
-55OC
-10mAdc,
-100uAdc,
B772Y
B772-GR
B772O
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transistor b722
Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)
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O-126
O-126
transistor b722
transistor b722 p
B722 p
B722 TRANSISTOR DATA
b772 to 126
transistor b722 b
N E C B772
b722
transistor pnp b722
b772 p
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range
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O-126
290TYP
090TYP
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Untitled
Abstract: No abstract text available
Text: B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES Low frequency power amplifier High Current Low Speed Switching Emitter
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B772C
O-126C
B772C-R
B772C-O
B772C-Y
B772C-GR
-10mA,
-100mA
-200mA
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d82 sot-23
Abstract: datasheet d882 B772SS D882SS d82 sot23
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot-23
datasheet d882
B772SS
D882SS
d82 sot23
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datasheet d882
Abstract: b72 voltage regulator B772 TRANSISTOR b72 B772SS D882SS transistor marking 2A H B721
Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES 3 *High current output up to 3A
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B772SS
B772SS
D882SS
OT-23
QW-R206-017
datasheet d882
b72 voltage regulator
B772
TRANSISTOR b72
D882SS
transistor marking 2A H
B721
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d82 sot23
Abstract: D882* transistor
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
D882SSL
10sing
QW-R206-018
d82 sot23
D882* transistor
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d82 sot23
Abstract: B772SS D882SS
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot23
B772SS
D882SS
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TRANSISTOR b72
Abstract: B721
Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES *High current output up to 3A
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B772SS
B772SS
D882SS
OT-23
QW-R206-017
TRANSISTOR b72
B721
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PDF
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d82 sot-23
Abstract: datasheet d882 D882SS MARKING D82 d82 sot23 D882SSL d882* npn transistor d82 diode D882 d882s
Text: UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES 3 * High current output up to 3A * Low saturation voltage * Complement to B772SS 1 APPLICATIONS 2 SOT-23 * Audio power amplifier * DC-DC convertor * Voltage regulator
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D882SS
B772SS
OT-23
D882SSL
D882SS
D882SSL-x-AE3-R
882SSL-x-AE3-R
QW-R206-018
d82 sot-23
datasheet d882
MARKING D82
d82 sot23
D882SSL
d882* npn transistor
d82 diode
D882
d882s
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PDF
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B72 sot-23
Abstract: TRANSISTOR b72 B772SS D882SS D882* transistor
Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES
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B772SS
B772SS
OT-23
D882SS
B772SSL
B772SS-x-AE3-R
B772SSL-x-AE3-R
B72 sot-23
TRANSISTOR b72
D882SS
D882* transistor
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B43876
Abstract: B43875 B43991 B41684 B43405 B82727-C1-A1 B43471 B43465 b41876 B43406
Text: SAW Components Data Sheet B7725, Pb-free SAW Components B7725 Low-Loss Filter 1575,42 MHz Data Sheet Chip Sized SAW Package QCS5H Features 0,1 Low loss RF filter for GPS receivers Unbalanced to balanced operation Low amplitude ripple Impedance transformation from 50 Ω
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B7725,
B7725
B7725
B39162-B7725-K910
C61157-A7-A139
F61074-V8189-Z000
2002/95/EC
2005/747/EC
B43876
B43875
B43991
B41684
B43405
B82727-C1-A1
B43471
B43465
b41876
B43406
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