H 649 A TRANSISTOR Search Results

H 649 A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

H 649 A TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BO 649 Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington	OCR Scan	0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN	PDF
BD 649 Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650 Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan		PDF
IC 651 Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651 Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION	OCR Scan	DD4314b BDS643/645/647/649/651 r-33-z OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 IC 651 BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651	PDF
BD 649 Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington	OCR Scan	fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65	PDF
Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general	OCR Scan	BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll	PDF
transistor bd650 Abstract: BD648 BD646 BD652 BD644 BD650 IC 651 Contextual Info: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD644 BD646 BD648 transistor bd650 BD648 BD646 BD652 BD644 IC 651	PDF
BD645 Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646 Contextual Info: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646	PDF
669a Abstract: 649a transistor 669A transistor 649A CSD669A transistors D 669 CSB649 CSB649A CSD669 PC 649 Contextual Info: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM "V rx i_ Iff E I— MAX. 7.4 7.8 B 10.5 10.8 C 2.4 2.7	OCR Scan	CSB649, CSB649A CSD669, CSD669A 669a 649a transistor 669A transistor 649A CSD669A transistors D 669 CSB649 CSD669 PC 649	PDF
h 669A Abstract: 669A 649a C649A h 649A Contextual Info: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7 .4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E	OCR Scan	CSB649, CSB649A CSD669, CSD669A h 669A 669A 649a C649A h 649A	PDF
capacitor 106 35K Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to	Original	MRF21120/D MRF21120 MRF21120S MRF21120 capacitor 106 35K capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet	PDF
capacitor 226 35K Abstract: 226 35K capacitor Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to	Original	MRF21120/D MRF21120 MRF21120S capacitor 226 35K 226 35K capacitor	PDF
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21120/D MRF21120 MRF21120S MRF21120	PDF
226 35K capacitor Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to	Original	MRF21120/D MRF21120 MRF21120S MRF21120 226 35K capacitor 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor	PDF
226 35k 051 Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21120/D MRF21120 MRF21120S MRF21120/D 226 35k 051	PDF

z40 mosfet Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF21120/D MRF21120R6 MRF21120/D z40 mosfet	PDF
capacitor 226 35K Abstract: R 226 35k 226 35K capacitor Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21120/D MRF21120 MRF21120/D capacitor 226 35K R 226 35k 226 35K capacitor	PDF
h 669A Abstract: 669A 649a transistor 669A transistor 649A A649A CSD669A CSB649 CSB649A CSD669 Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier	Original	ISO/TS16949 CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669A 649a transistor 669A transistor 649A A649A CSD669A CSB649 CSB649A CSD669	PDF
h 669A Abstract: 669A transistor 649A 649a transistor 669A CSB649 CSB649A CSD669 CSD669A h 649A Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier	Original	CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669A transistor 649A 649a transistor 669A CSB649 CSB649A CSD669 CSD669A h 649A	PDF
h 669A Abstract: 669a Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier	Original	CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669a	PDF
h 669A Abstract: 669a transistor 649A transistor 669A 649a CSD669A CSB649 CSB649A CSD669 D 669A Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier	Original	ISO/TS16949 CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669a transistor 649A transistor 669A 649a CSD669A CSB649 CSB649A CSD669 D 669A	PDF
h 669A Abstract: 669a transistor 669A 649A transistor 649A CSD669A CSB649 CSB649A CSD669 A649A Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS	Original	CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669a transistor 669A 649A transistor 649A CSD669A CSB649 CSB649A CSD669 A649A	PDF
A4514 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21120 MRF21120R6 A4514	PDF
226 35K capacitor Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21120 MRF21120R6 226 35K capacitor	PDF
226 35K Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21120 MRF21120R6 226 35K 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6	PDF

H 649 A TRANSISTOR Search Results

H 649 A TRANSISTOR Result Highlights (5)

H 649 A TRANSISTOR Datasheets Context Search

BO 649

BD 649

IC 651

BD 649

transistor bd650

BD645

669a

h 669A

capacitor 106 35K

capacitor 226 35K

226 35K capacitor

226 35k 051

z40 mosfet

capacitor 226 35K

h 669A

h 669A

h 669A

h 669A

h 669A

A4514

226 35K capacitor

226 35K