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    H 4242 TRANSISTOR Search Results

    H 4242 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    H 4242 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor C 4242

    Abstract: D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		P-TO263-7-1 transistor C 4242 D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G PDF

    D 4242

    Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		P-TO263-7-1 D 4242 transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242 PDF

    4269g

    Abstract: IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b
    Text: Adjustable LED Driver TLE 4242 G Target Data Features • • • • • • • • Adjustable constant current up to 500mA ±5% Wide input voltage range up to 42V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		500mA P-TO263-7-1 P-TO-263-7-1 4269g IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


    Original     		HE6739 HSC4242 HSC4242 O-220 183oC 217oC 260oC PDF

    RL400

    Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
    Text: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new


    Original     		D-34123 RL400 RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301 PDF

    HD6417709A

    Abstract: hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020
    Text: INDEX Subjects Products Suppliers Page 1. CPU & PERIPHERAL Embedded Processor Microcontroller CPU Peripherals DSP Voice Recognition Motorola / NS / Hitachi / Intel Atmel / Intel / Motorola / Hitachi / NS / Microchip NS / Intersil / Intel Motorola Sensory 2-10


    Original     		RSC-300 HD6417709A hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020 PDF

    B384F120T30

    Abstract: D496 D505
    Text: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2


    Original     		B384F120T30 B384F120T30 D496 D505 PDF

    B384F120T30

    Abstract: BCM reflow
    Text: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		B384F120T30 B384F120T30 BCM reflow PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		B384F120T30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		B384F120T30 PDF

    FR-D720S

    Abstract: FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC
    Text: Specifications /// Product Information EBG 184-EN MITSUBISHI ELECTRIC FACTORY AUTOMATION Type FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D740-050-EC FR-D740-080-EC


    Original     		184-EN FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D720S FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		B384F120T30 PDF

    B384F120T30

    Abstract: D496 D505
    Text: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2


    Original     		B384F120T30 B384F120T30 D496 D505 PDF

    MM8001

    Abstract: M8-001 MM8000 M8000
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­


    OCR Scan     		b3b7554 MM8000 MM8001 M8001) 240ohm MM8001 M8-001 M8000 PDF

    D 4242 transistor

    Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
    Text: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456 PDF

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750 PDF

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


    OCR Scan     		B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383 PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Linear USICs FB3651 IAN Transceiver Array GENERAL DESCRIPTION The FB3651 is an application focused tile array intended for local area network transceiver applications. This array was developed using Micro Linear's proprietary mini tile architecture. This mini tile


    OCR Scan     		FB3651 1020K 5432K 310pF FB3651 PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six Independent gates each of which performs an Inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		DM54368 PDF

    Untitled

    Abstract: No abstract text available
    Text: co <o « CTI National ÉSà Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		DM54368 PDF

    6573

    Abstract: DM54368 DM54368J DM54368W J16A W16A
    Text: 368 CTl National ÉSASemiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		DM54368 6573 DM54368J DM54368W J16A W16A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRF740 O-220AB PDF

    D 4242 transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF3P03HD Medium Power Surface Mount Products Motorola Preferred Dtvlci T M O S P-Channel Field Effect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		MMSF3P03HD D 4242 transistor PDF

    transistor 2 SC 4242

    Abstract: MHPM7A8A120A gate drive circuit for igbt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7A8A120A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


    OCR Scan     		MHPM7A5S120DC3) G50---------E50---------- MHPM7A8A120A transistor 2 SC 4242 MHPM7A8A120A gate drive circuit for igbt PDF