EBC49DCWN-S420
Abstract: S420
Text: Sullins Edgecards Sullins Edgecards .100” [2.54 mm] Contact Centers, .610” [15.49 mm] Insulator Height, [ISA] Dip Solder/Wire Wrap/Right Angle SPECIFICATIONS READOUT DUAL D POLARIZING KEY PLC-K1 • Accommodates .062” ± .008” [1.57 ± .20] PC board
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EBC18DCWN-S524
EBC31DCWN-S524
EBC49DCWN-S518
EBC31DCWN-S371
EBC49DCWN-S420
EBC49DCAN-S605
EBC49DCWN-S420
S420
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
200ns
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EI1805TBOPL
Abstract: 30M30 specifications of scr EI3015TBOPS EI3015TBOPL EI1805TBCPL
Text: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, AC, M12, M18, M30 • Thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
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STTA1512P
Abstract: STTA1512PI
Text: STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA1512P/PI
STTA1512P
STTA1512PI
STTA1512P
STTA1512PI
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Untitled
Abstract: No abstract text available
Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
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M12x1
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EI1202TBCSL
Abstract: TBL 6 A 6 Y 1204 scr
Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M12, M18, M30 • Stainless steel housing, cylindrical • Diameter: M12, M18, M30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching • Protection: Overvoltage
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Untitled
Abstract: No abstract text available
Text: PXI Chassis PXIS-3320 15-Slot 6U PXI/CompactPCI Chassis with AC Introduction The ADLINK PXIS-3320 is a 19" 6U PXI chassis comes with one system slot and 14 peripheral slots that supports both PXI and CompactPCI modules. Compliant with the PXI specifications Rev. 2.2, the PXIS-3320 highlights a star trigger,
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PXIS-3320
15-Slot
PXIS-3320
PXIS-3320/1000W/TB
with100
PXIS-3320/1000W
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Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant includes all homogeneous materials FEATURES O • HIGH TEMPERATURE 150 C *See Part Number System for Details • CAPACITANCE VALUES UP TO 1,000 F
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120Hz/20
120Hz)
50Vdc
10x12
10x16*
10x20*
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44-PIN
Abstract: E250 T15S4M16A T15S4M16A-250C
Text: tm TE CH Preliminary T15S4M16A SRAM 256K X 16 LOW POWER CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡E Low-power consumption - Operating current : 15mA max - Stand-by current : 2£gA (CMOS input/output) ¡E250 ns access time The T15S4M16A is a very Low Power CMOS
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T15S4M16A
T15S4M16A
44-PIN
E250
T15S4M16A-250C
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A12L
Abstract: IDT7005 IDT7005L IDT7005S
Text: IDT7005S/L HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35/55/70ns max. – Industrial: 35/55ns (max.) – Commercial:15/17/20/25/35/55ns (max.)
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IDT7005S/L
20/25/35/55/70ns
35/55ns
15/17/20/25/35/55ns
IDT7005S
750mW
IDT7005L
700mW
IDT7005
A12L
IDT7005L
IDT7005S
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H16TBXX
Abstract: thyristor h 250 tb 16 TLXX thyristor phase control rectifier thyristor H 40 TB 16A thyristor H 65 TB 16A Hirect thyristor H 65 TB 16 or equivalent 850C
Text: PHASE CONTROL THYRISTOR H16TB/TLXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 125 15 15 600 mA mA V/ S 16 A 25 A 350 A 610 A 2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage
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H16TB/TLXX
June-2008
H16TBXX
thyristor h 250 tb 16
TLXX
thyristor phase control rectifier
thyristor H 40 TB 16A
thyristor H 65 TB 16A
Hirect
thyristor H 65 TB 16 or equivalent
850C
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H30TBXX
Abstract: thyristor h 250 tb 15 thyristor phase control rectifier thyristor rectifier 100a Hirect 30A 850C H30TB thyristor h 250 tb GD 08 Rectifiers
Text: PHASE CONTROL THYRISTOR H30TB/TLXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 125 15 15 600 mA mA V/ S 30 A 50 A 500 A 1250 A 2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage
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H30TB/TLXX
June-2008
H30TBXX
thyristor h 250 tb 15
thyristor phase control rectifier
thyristor rectifier 100a
Hirect 30A
850C
H30TB
thyristor h 250 tb
GD 08 Rectifiers
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AP 1510 equivalent
Abstract: Optical Couplers
Text: STANDARD SINGLEMODE COUPLERS C-NS DESCRIPTION FOCI’s Standard Singlemode Couplers are used to split light with minimal loss from one into two fibers, or to combine light from two fibers onto one fiber. Designed to operate at a single wavelength, typically 1310nm or 1550nm, these components
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1310nm
1550nm,
1310nm
1550nm
9901CAT-C-Ver004
AP 1510 equivalent
Optical Couplers
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pavilion
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
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QID4515001
Amperes/4500
180nH
100nH
pavilion
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Untitled
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
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QID4515001
Amperes/4500
00A/s
100nH
180nH
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Untitled
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
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QID4515001
Amperes/4500
180nH
100nH
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Untitled
Abstract: No abstract text available
Text: EUPEC blE D • 3 M 0 3 E ^ 7 0 0 D 1 1 2 2 Tb^ H U P E C T T250 N, TD 250 N, DT250 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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DT250
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ScansU9X26
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
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ry-34B
ry-345
B03flyujH0e
ry-34E
1000i/a
ScansU9X26
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Untitled
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
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ry-34B
ry-345
flnana30He
B03flyujH0e
ry-34E
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3C15A
Abstract: GTS FC-618A
Text: T e m ic SMD15N06 Siliconix _ N-Channel Enhancement-Mode Transistor 175°C Maximum Junction Temperature Product Summary jÜ H l FB M artfP} 60 0.10 15 D DPAK TO-252 D n°u G S S Top View N-Channel M OSFFT Absolute Maximum Ratings (Tc = 25° C Unless Otherwise Noted)
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SMD15N06
O-252)
3C15A
GTS FC-618A
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Untitled
Abstract: No abstract text available
Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)
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IDT7M4048
IDT7MB4048
400jiA
32-pin,
IDT7M4048/7MB4048
7MB4048SXXP
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BY223
Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Text: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38
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BY223
OD-38
BYW19
BYW29
tBYX71
S0D38
BY277
t1N3889
BY223
BYX50-200R
BYX50-200
bridge RECTIFIER GI
by277 750r
diode BY223
600R
800R
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Untitled
Abstract: No abstract text available
Text: RF TRANSFORMERS Im p ed an ce R atio Type Freq u en cy R ange M H z V ersus M axim um In sertio n Loss 3dB * * * 2dB 1 dB P o w er R ating (W atts) m ax. P/N 1:1 1:1 1:1 1:1.5 1:1.5 1:2 1:4 1:4 1:9 1:16 A A A A A A A A A A 5-1000 0.15-400 0.01-150 2-400
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TA-01-*
TA-05-*
TA-06-*
TA-09-*
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Untitled
Abstract: No abstract text available
Text: CAT28C256 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 120/150/200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max. -S tan d b y: 150 jiA Max. ■ End of Write Detection:
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CAT28C256
256K-Bit
CAT28C256
28C256
CAT28C256H
NI-20T
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