EBC49DCWN-S420
Abstract: S420
Text: Sullins Edgecards Sullins Edgecards .100” [2.54 mm] Contact Centers, .610” [15.49 mm] Insulator Height, [ISA] Dip Solder/Wire Wrap/Right Angle SPECIFICATIONS READOUT DUAL D POLARIZING KEY PLC-K1 • Accommodates .062” ± .008” [1.57 ± .20] PC board
|
Original
|
PDF
|
EBC18DCWN-S524
EBC31DCWN-S524
EBC49DCWN-S518
EBC31DCWN-S371
EBC49DCWN-S420
EBC49DCAN-S605
EBC49DCWN-S420
S420
|
RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
RURU150120
RURU150120
200ns)
200ns
|
EI1805TBOPL
Abstract: 30M30 specifications of scr EI3015TBOPS EI3015TBOPL EI1805TBCPL
Text: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, AC, M12, M18, M30 • Thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
|
Original
|
PDF
|
|
STTA1512P
Abstract: STTA1512PI
Text: STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
|
Original
|
PDF
|
STTA1512P/PI
STTA1512P
STTA1512PI
STTA1512P
STTA1512PI
|
Untitled
Abstract: No abstract text available
Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
|
Original
|
PDF
|
M12x1
|
EI1202TBCSL
Abstract: TBL 6 A 6 Y 1204 scr
Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M12, M18, M30 • Stainless steel housing, cylindrical • Diameter: M12, M18, M30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching • Protection: Overvoltage
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PXI Chassis PXIS-3320 15-Slot 6U PXI/CompactPCI Chassis with AC Introduction The ADLINK PXIS-3320 is a 19" 6U PXI chassis comes with one system slot and 14 peripheral slots that supports both PXI and CompactPCI modules. Compliant with the PXI specifications Rev. 2.2, the PXIS-3320 highlights a star trigger,
|
Original
|
PDF
|
PXIS-3320
15-Slot
PXIS-3320
PXIS-3320/1000W/TB
with100
PXIS-3320/1000W
|
Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant includes all homogeneous materials FEATURES O • HIGH TEMPERATURE 150 C *See Part Number System for Details • CAPACITANCE VALUES UP TO 1,000 F
|
Original
|
PDF
|
120Hz/20
120Hz)
50Vdc
10x12
10x16*
10x20*
|
44-PIN
Abstract: E250 T15S4M16A T15S4M16A-250C
Text: tm TE CH Preliminary T15S4M16A SRAM 256K X 16 LOW POWER CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡E Low-power consumption - Operating current : 15mA max - Stand-by current : 2£gA (CMOS input/output) ¡E250 ns access time The T15S4M16A is a very Low Power CMOS
|
Original
|
PDF
|
T15S4M16A
T15S4M16A
44-PIN
E250
T15S4M16A-250C
|
A12L
Abstract: IDT7005 IDT7005L IDT7005S
Text: IDT7005S/L HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35/55/70ns max. – Industrial: 35/55ns (max.) – Commercial:15/17/20/25/35/55ns (max.)
|
Original
|
PDF
|
IDT7005S/L
20/25/35/55/70ns
35/55ns
15/17/20/25/35/55ns
IDT7005S
750mW
IDT7005L
700mW
IDT7005
A12L
IDT7005L
IDT7005S
|
H16TBXX
Abstract: thyristor h 250 tb 16 TLXX thyristor phase control rectifier thyristor H 40 TB 16A thyristor H 65 TB 16A Hirect thyristor H 65 TB 16 or equivalent 850C
Text: PHASE CONTROL THYRISTOR H16TB/TLXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 125 15 15 600 mA mA V/ S 16 A 25 A 350 A 610 A 2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage
|
Original
|
PDF
|
H16TB/TLXX
June-2008
H16TBXX
thyristor h 250 tb 16
TLXX
thyristor phase control rectifier
thyristor H 40 TB 16A
thyristor H 65 TB 16A
Hirect
thyristor H 65 TB 16 or equivalent
850C
|
H30TBXX
Abstract: thyristor h 250 tb 15 thyristor phase control rectifier thyristor rectifier 100a Hirect 30A 850C H30TB thyristor h 250 tb GD 08 Rectifiers
Text: PHASE CONTROL THYRISTOR H30TB/TLXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 125 15 15 600 mA mA V/ S 30 A 50 A 500 A 1250 A 2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage
|
Original
|
PDF
|
H30TB/TLXX
June-2008
H30TBXX
thyristor h 250 tb 15
thyristor phase control rectifier
thyristor rectifier 100a
Hirect 30A
850C
H30TB
thyristor h 250 tb
GD 08 Rectifiers
|
pavilion
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
|
Original
|
PDF
|
QID4515001
Amperes/4500
180nH
100nH
pavilion
|
Thomson varistor ve17
Abstract: varistors ve07 Thomson-CSF* relay VARISTOR NTC 220 VE09 0250 VE07 0250 Thomson varistor varistor Ve24 Varistor VE09 thomson-csf relay
Text: NTC THERMISTORS DESCRIPTION LEADLESS DISCS CHIPS NC12 Type/Size NC20 Climatic category Operating temperature range NN.NR. LEADED CHIPS NJ28 NK20 2,8 3 1,75 ± 0,25 1,75 ± 0,25 0,4 0,7 ± 0,25 40/125/56 -55 +150°C D L Dmax/L Hmax/l E/tmin d/e 2,00 ± 0,3
|
Original
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
|
Original
|
PDF
|
QID4515001
Amperes/4500
180nH
100nH
|
QID4515001
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
|
Original
|
PDF
|
QID4515001
Amperes/4500
180nH
100nH
QID4515001
|
transistor k 975
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
|
Original
|
PDF
|
QID4515001
Amperes/4500
180nH
100nH
transistor k 975
|
Untitled
Abstract: No abstract text available
Text: EUPEC blE D • 3 M 0 3 E ^ 7 0 0 D 1 1 2 2 Tb^ H U P E C T T250 N, TD 250 N, DT250 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
|
OCR Scan
|
PDF
|
DT250
|
ScansU9X26
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
|
OCR Scan
|
PDF
|
ry-34B
ry-345
B03flyujH0e
ry-34E
1000i/a
ScansU9X26
|
Untitled
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
|
OCR Scan
|
PDF
|
ry-34B
ry-345
flnana30He
B03flyujH0e
ry-34E
|
3C15A
Abstract: GTS FC-618A
Text: T e m ic SMD15N06 Siliconix _ N-Channel Enhancement-Mode Transistor 175°C Maximum Junction Temperature Product Summary jÜ H l FB M artfP} 60 0.10 15 D DPAK TO-252 D n°u G S S Top View N-Channel M OSFFT Absolute Maximum Ratings (Tc = 25° C Unless Otherwise Noted)
|
OCR Scan
|
PDF
|
SMD15N06
O-252)
3C15A
GTS FC-618A
|
Untitled
Abstract: No abstract text available
Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)
|
OCR Scan
|
PDF
|
IDT7M4048
IDT7MB4048
400jiA
32-pin,
IDT7M4048/7MB4048
7MB4048SXXP
|
BY223
Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Text: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38
|
OCR Scan
|
PDF
|
BY223
OD-38
BYW19
BYW29
tBYX71
S0D38
BY277
t1N3889
BY223
BYX50-200R
BYX50-200
bridge RECTIFIER GI
by277 750r
diode BY223
600R
800R
|
Untitled
Abstract: No abstract text available
Text: CAT28C256 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 120/150/200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max. -S tan d b y: 150 jiA Max. ■ End of Write Detection:
|
OCR Scan
|
PDF
|
CAT28C256
256K-Bit
CAT28C256
28C256
CAT28C256H
NI-20T
|