GXM05552 Search Results

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

XY 805 ic

Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Contextual Info: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006

transistor "micro-x" "marking" 3

Abstract: marking K "micro x" BFY420
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding G ms = 21 dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz

GaAs Amplifier Micro-X Marking 865

Abstract: Micro-X Marking 865 transistor GaAS marking 576 CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P 09 67 025 4715
Contextual Info: CFY67. HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo- morphic AlGaAs/lnGaAs/ GaAs HEMT • For professional super low-noise amplifiers • For frequenzcies from 500 MHz to >20 Ghz • Hermetically sealed micorowave package

BFY640-04

Abstract: bfy640 BFY640 ES
Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz

BFY196

Contextual Info: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6,5 GHz F = 3 dB at 2 GHz • esa Space Qualification Expected 1998

BFY181

Contextual Info: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz

BFY193

Contextual Info: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified

Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •

marking A04

Abstract: BFY181 p 181 V Q62702F1715
Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz

on semiconductor marking code A04

Abstract: marking A04 C BFY182
Contextual Info: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz

A03 transistor

Abstract: microwave transducer BFY196 BFY 36 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz

MICROWAVE TRANSITOR

Abstract: BFY405
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

A21E

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz

BFY182

Contextual Info: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified

35 micro-X 20ghz gaas

Abstract: marking K "micro x" transistor GaAS marking 576 CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P 133 marking Micro-X
Contextual Info: CFY25. HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

A03 transistor

Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Contextual Info: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

GaAs Amplifier Micro-X Marking k

Abstract: marking K "micro x" CGY41 GaAs Amplifier Micro-X
Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single- stage monolithic mircrowave IC MMIC- amplifier • Application range: 100 MHZ to 3 GHz • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz