GTO MOTOROLA Search Results

BUT50P

Abstract: MC 340 transistor y145m But50
Contextual Info: M O TO RO LA SC XSTRS/R F is e D | b3fc.7aS4 GQflMfl7M M | T -3 3 - J 9 MOTOROLA SEM ICO NDU CTO R BUT50P TECHNICAL DATA AD V A N C E INFORM ATION 8 AM PERES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS

BUT51P

Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Slotted Optical Sw itch D a rlin gto n O u tp u t These devices consist of two gallium arsenide infrared emitting diodes facing two NPN silicon photodarlingtons across a 0.100" wide slot in the housing. Switching takes

MFOD73

Abstract: MFOE76
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFOD73 Fiber O p tics — FLCS Fam ily P ho to D e te c to r D a rlin gto n O utput FLCS FAM ILY FIBER OPTICS PHOTO DETECTOR DARLINGTON OUTPUT The MFOD73 is designed for low cost, short distance Fiber Optic Systems using 1000 micron

BOX34C

Abstract: Transistors bd 133 BOX34B X33C 3B33C 750 V dc 100 amp GTO X33A bd 1382 semiconductor BDX33 bd 139 package
Contextual Info: m o to ro la sc x s trs /r 12E D I f b3t7SSM 000477=1 T | 7-33-29 • 7 ^ 3 3 -3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLIN GTO N COM PLEMENTARY SILICO N POWER TRANSISTORS . designed fo r geneial purpose and low speed NPN PMP BDX33 B0X33A BDX33B BDX33C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6 -Pin D IP O p to is o la to r H igh Tem perature D a rlin gto n O utput • • • • • • Convenient Plastic Dual-In-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature

D679A

Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc

MGT01000

Abstract: CS thyristor cs 3-04 7623A MGT01200 pearson 411 1N6292 221A-04 SG diodes high speed low power thyristor Gate Turn-Off Thyristors
Contextual Info: MOTOROLA SC DIODES/OPTO k3b?2S5 0001103 =| • 25E D r - a s w f Gate Turn-Off Thyristors The GTO is a family of asym metric gate turn-off thyristors designed primarily for dc power switching applications such as motor drives, switching power supplies, inverters, or wherever a need exists for high surge current capabilities and fast

2N6300

Contextual Info: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching

4n29 Motorola

Abstract: 4T-05
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA <Ê> «1 C ; ® ® ® ® VDE UL CSA SEMKO DEMKO NEMKO se n BAST GlobalOptolsolator 6 -Pin D IP O p to lso la to rs D arlin gto n O utput The 4N29/A, 4N30,4N31,4N320 and 4N33 1) devices consist of a gallium arsenide Infrared emitting diode optically coupled to a monolithic silicon

4n32

Abstract: 4N33 Motorola
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Photo Detector MRD360 D arlin gto n O u tp u t M o to ro la Preferred Device The M R D 3 6 0 ¡s designed for applications requiring very high radiation sensitivity at low light levels. PHO TO DETECTOR D A R L IN G T O N O U T P U T

SG DIODE

Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Contextual Info: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,

h22b1

Abstract: H21B1 typical circuit
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H21B1 H 21B2 H 21B 3 Slotted Optical Switches Darlington Output T h e se devices each co n sist of a galliu m arse nid e infrared em itting d iod e facing a sili­ con N P N p ho to d arlin gto n in a m old e d plastic h o u sin g. A slot in the h o u sin g betw een the

354A-01

Abstract: 354E-01 20 PM 05
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC71 Series Slotted O ptical Sw itch e s D arlington Output Eac h device c o n s is ts of a galliu m a rse n id e infrared em itting d iod e fa c in g a silic o n N P N p h o to d a rlin gto n in a m o ld e d plastic h o u sin g . A slot in the h o u sin g betw een the em itter

V14SM

Contextual Info: MOTOROLA •B SEMICONDUCTOR TECHNICAL DATA MOC71 S lo tte d O p tic a l S w itc h e s Series D a rlin gto n O u tpu t Each device co n sists o f a g a lliu m arsen id e infrare d e m ittin g d io d e fa cing a s ilico n NPN p h o to d a rlin g to n in a m o ld e d p la stic h ou sin g. A s lo t in th e h o u sin g betw een th e e m itte r

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 6 -Pin D IP O p to is o la to r D a rlin gto n O u tpu t T h is d e v ic e c o n s is t s o f a g a lliu m a r s e n id e in fra re d e m itt in g d io d e o p t ic a lly c o u p le d to a m o n o lit h ic s ilic o n p h o t o d a r lin g t o n detector.

MLED71

Abstract: MRD711 0PIW
Contextual Info: MOTOROLA H SE M IC O N D U C T O R TECHNICAL DATA P h o to D e te c to r D a rlin gto n O u tpu t . . . d e s i g n e d f o r a w i d e v a r i e t y o f i n d u s t r ia l p r o c e s s i n g a n d c o n t r o l a p p l i c a t i o n s r e q u i r ­ i n g a s e n s i t i v e d e t e c t o r . T h e M R D 7 1 1 i s in a n id e n t ic a l p a c k a g e a n d is d e s i g n e d f o r u s e

gto Gate Drive circuit

Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
Contextual Info: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the

MOTOROLA SCR

Abstract: transistor equivalent Gate Turn-Off Thyristors scr 15 amps scr 1000 amps SCR GTO asymmetrical SCR MCR1000-6 GTO Gate Drivers MCR1000-4
Contextual Info: TMOS SCR - MCR1000 TW O T R A N S IS T O R E Q U IV A L E N T T O T M O S S C R P o w e r FE T te c h n o lo g y is n o w e x te n d e d to in c lu d e a tw o - tra n s is to r e q u iv a le n t to la tc h in g s ilic o n c o n tro lle d re c tifie rs S C R s . T h is firs t-g e n e ra tio n T M O S S C R h a s v e ry fa s t s w itc h in g tim e s , h igh line

d223 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD223 Darlington Output [CTR > 500% Min] The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington

MFOD

Abstract: MF0073 363B-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFOD73 Fiber O ptics — FLC S Family Photo Detector Darlington Output F LC S F A M IL Y F IB ER O P T IC S P H O TO D E T E C T O R D A R L IN G T O N O U T P U T . d e sign e d for lo w cost, sh o rt distance Fiber Optic S y st e m s u sin g 1000 m icron core

MK1V240

Abstract: style 1 case 263-04 Case 175-03 CASE 221A-04 motorola MCR69-2 MCR71-2 mcr71 MOTOROLA MCR71-6 MCR716 MK1V-240
Contextual Info: M O T O R OL A SC 14E D I -CTELECOd} b3b7E53 Thyristors 0061443 3 | T -2 S -O I Table 30. Crowbar SCRs Peak Capacitor Discharge Current 1 750 AMPS 300 AMPS ELECTRICAL CHARACTERISTICS Maximum or Min/Max , , I'lr-*», 11 . li'W W'1 ,1*.1'I'll'!)!!* 1• >' > 111• .

TRANSISTOR bd 147

Abstract: BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45
Contextual Info: MOTOROLA SC X S T R S /R F 7 ^ 3 3 -o *f MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA D ARLINGTON COMPLEMENTARY SILICO N POWER TRANSISTORS High DC Current Gain — hpg » 2500 typ. @ lc “ 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: