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    Infineon Technologies AG BGT60ATR24CE6327XTMA1

    SENSOR - RADAR SENSOR DIGITAL
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    Infineon Technologies AG BGT60LTR11AIPE6327XUMA2

    IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
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    DigiKey BGT60LTR11AIPE6327XUMA2 Digi-Reel 3,262 1
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    Mouser Electronics BGT60LTR11AIPE6327XUMA2 3,123
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    Vyrian BGT60LTR11AIPE6327XUMA2 10,568
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    Goford Semiconductor GT600P15M

    MOSFET P-CH 150V 54A 276W 65M(M
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    DigiKey GT600P15M Cut Tape 800 1
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    GT600P15M Digi-Reel 800 1
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    NXP Semiconductors MC9S08GT60ACFBE

    IC MCU 8BIT 60KB FLASH 44QFP
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    DigiKey MC9S08GT60ACFBE Tray 572 1
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    Richardson RFPD MC9S08GT60ACFBE 480
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    Chip Stock MC9S08GT60ACFBE 192,155
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    EBV Elektronik MC9S08GT60ACFBE 2,880 15 Weeks 96
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    Infineon Technologies AG DEMOBGT60LTR11AIPTOBO1

    EVAL BOARD FOR BGT60LTR11AIP
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    DigiKey DEMOBGT60LTR11AIPTOBO1 Box 38 1
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    Find more GT60 price and stock on Findchips.com

    GT60 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT600 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT60-005 Fronter Electronics DIODE SWITCHING DIODE 50V 22A 2GT Original PDF
    GT60-005 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-005G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT60-01 Fronter Electronics DIODE SWITCHING DIODE 100V 22A 2GT Original PDF
    GT60-01 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-01G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT60-02 Fronter Electronics DIODE SWITCHING DIODE 200V 22A 2GT Original PDF
    GT60-02 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-02G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT60-04 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-04G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT60-06 Fronter Electronics DIODE SWITCHING DIODE 600V 22A 2GT Original PDF
    GT60-06 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-06G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT60-10 Fronter Electronics DIODE SWITCHING DIODE 1000V 22A 2GT Original PDF
    GT60-10 Frontier Electronics 6A GENERAL PURPOSE PLASTIC RECTIFIER Original PDF
    GT60-10G Frontier Electronics 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER Original PDF
    GT605 Taiwan Semiconductor 6.0 A Glass Passivated Rectifier Original PDF
    GT605 Taiwan Semiconductor 6.0 AMPS. Glass Passivated Rectifiers Original PDF

    GT60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT60M101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0


    OCR Scan     		GT60M101 --15V GT60M101 PDF

    GT60M303

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


    OCR Scan     		GT60M303 25//s GT60M303 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT605 THRU GT610 6.0 AMPS. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes GT Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant


    Original     		GT605 GT610 MILSTD-202, 25ambient GT610) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.


    OCR Scan     		GT60M301 PDF

    GT60M302

    Abstract: P channel 600v 20a IGBT
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)


    OCR Scan     		GT60M302 GT60M302 P channel 600v 20a IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		GT60M303 25//s PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60-04

    Abstract: GT60-005G GT60-10G TA60 GT60-04G
    Text: GT60-005G THRU GT60-10G FRONTIER ELECTRONICS CO., LTD. 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER FEATURES ! UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND ! DIFFUSED JUNCTION ! HIGH SURGE CURRENT CAPABILITY ! BEVEL ROUND CHIP,AVALANCHE OPERATION ! GLASS PASSIVATED JUNCTION


    Original     		GT60-005G GT60-10G 300us GT60-04 GT60-005G GT60-10G TA60 GT60-04G PDF

    GT60M303

    Abstract: GT60M303 application GT60M303 circuit
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		GT60M303 GT60M303 GT60M303 application GT60M303 circuit PDF

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		GT60J321 GT60J321 PDF

    GT60M301

    Abstract: 20A igbt
    Text: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.


    OCR Scan     		GT60M301 GT60M301 20A igbt PDF

    610G

    Abstract: GT605G GT64G
    Text: 6 Amp Glass Passivated Quick Connect Rectifier GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Package suitable for assembly Glass passivated junction High current capability Plastic package has underwriters laboratory


    Original     		GT605G~ GT610G 610G GT605G GT64G PDF

    GT60J323

    Abstract: GT60J IC-3360 PF1510000
    Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)


    Original     		GT60J323 GT60J323 GT60J IC-3360 PF1510000 PDF

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		GT60M303 GT60M303 application GT60M303 PDF

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		GT60M303 GT60M303 application GT60M303 circuit igbt failure rate PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Unit: mm Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		GT60J321 2-21F2C PDF

    GT605

    Abstract: GT610
    Text: GT605 THRU GT610 6.0 AMPS. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes GT Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant


    Original     		GT605 GT610 MILSTD-202, 25ambient GT610 PDF

    GT60M322

    Abstract: No abstract text available
    Text: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A)


    Original     		GT60M322 GT60M322 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)


    Original     		GT60N321 170mitation, PDF

    gt60n321

    Abstract: IC601 GT60N32 15AVge V16S
    Text: GT60N321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60N321 ○ 並列共振スイッチング用 ○ 第 4 世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		GT60N321 2-21F2C gt60n321 IC601 GT60N32 15AVge V16S PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 PDF

    transistor fc 1013

    Abstract: No abstract text available
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		GT60M302 transistor fc 1013 PDF

    S5J12

    Abstract: IC60N gt60m104
    Text: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 S5J12 IC60N gt60m104 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)


    OCR Scan     		GT60M104 PDF