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    GT50J Price and Stock

    Toshiba America Electronic Components GT50J341,Q

    IGBT 600V 50A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT50J341,Q Tray 90 1
    • 1 $4.48
    • 10 $2.964
    • 100 $2.1017
    • 1000 $1.64625
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    Avnet Americas GT50J341,Q Tray 18 Weeks 100
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    • 100 $2.01501
    • 1000 $1.77795
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    Mouser Electronics GT50J341,Q
    • 1 $4.36
    • 10 $2.91
    • 100 $2.1
    • 1000 $1.64
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    Toshiba America Electronic Components GT50JR21(STA1,E,S)

    IGBT 600V 50A TO-3P
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    DigiKey GT50JR21(STA1,E,S) Tube 33 1
    • 1 $6.54
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    • 1000 $2.73124
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    Mouser Electronics GT50JR21(STA1,E,S) 64
    • 1 $6.16
    • 10 $5.64
    • 100 $3.19
    • 1000 $2.73
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    TME GT50JR21(STA1,E,S) 1
    • 1 $4.64
    • 10 $3.68
    • 100 $3.31
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    EBV Elektronik GT50JR21(STA1,E,S) 21 Weeks 25
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    Toshiba America Electronic Components GT50JR22(STA1,E,S)

    IGBT 600V 50A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT50JR22(STA1,E,S) Tube 19 1
    • 1 $6.54
    • 10 $6.54
    • 100 $6.54
    • 1000 $2.73124
    • 10000 $2.73124
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    Mouser Electronics GT50JR22(STA1,E,S) 164
    • 1 $6.68
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    • 100 $3.83
    • 1000 $2.73
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    Newark GT50JR22(STA1,E,S) Bulk 328 1
    • 1 $5.84
    • 10 $5.15
    • 100 $4.09
    • 1000 $3.8
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    TME GT50JR22(STA1,E,S) 72 1
    • 1 $4.1
    • 10 $3.19
    • 100 $2.87
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    EBV Elektronik GT50JR22(STA1,E,S) 21 Weeks 25
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    Toshiba America Electronic Components GT50J121(Q)

    IGBT 600V 50A 240W TO3P LH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT50J121(Q) Tube
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    Toshiba America Electronic Components GT50JR21(STA1ES)

    IGBTs - Trays (Alt: GT50JR21(STA1,E,S))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GT50JR21(STA1ES) Tray 12 Weeks 25
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    • 100 $3.1027
    • 1000 $2.94975
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    Find more GT50J price and stock on Findchips.com

    GT50J Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT50J101 Toshiba Discrete IGBTs Original PDF
    GT50J101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT50J101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT50J101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT50J101 Toshiba TRANSISTOR IGBT 50A 600V Scan PDF
    GT50J102 Toshiba Discrete IGBTs Original PDF
    GT50J102 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Original PDF
    GT50J102 Toshiba Discrete IGBTs Original PDF
    GT50J102 Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF
    GT50J121 Toshiba Original PDF
    GT50J121 Toshiba High-Speed IGBTs Original PDF
    GT50J121 Toshiba Discrete IGBTs Original PDF
    GT50J121 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT50J121(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 240W TO3P LH Original PDF
    GT50J122 Toshiba N-channel IGBT Original PDF
    GT50J122 Toshiba Discrete IGBTs Original PDF
    GT50J301 Toshiba TRANS IGBT CHIP N-CH 600V 50A 3(2-21F2C) Original PDF
    GT50J301 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Original PDF
    GT50J301 Toshiba Discrete IGBTs Original PDF
    GT50J301 Toshiba Discrete IGBTs Original PDF

    GT50J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gt50j341

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		GT50J341 gt50j341 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J121 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長


    Original     		GT50JR22 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)


    Original     		GT50J342 PDF

    GT50J301

    Abstract: bipolar power transistor data toshiba set igbt on off Vge
    Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		GT50J301 GT50J301 bipolar power transistor data toshiba set igbt on off Vge PDF

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 GT50J325 PDF

    GT50J121

    Abstract: GT50J325
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J121 GT50J121 GT50J325 PDF

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		GT50J322 GT50J322 PDF

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 GT50J325 PDF

    gt50j322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		GT50J322 gt50j322 PDF

    50J328

    Abstract: GT50J328 TF01S
    Text: GT50J328 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J328 単位 : mm ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		GT50J328 2-16C1C 50J328 2002/95/EC) 00A/s 50J328 GT50J328 TF01S PDF

    GT50J301

    Abstract: No abstract text available
    Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		GT50J301 2-21F2C GT50J301 PDF

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		GT50J325 2-21F2C 20070701-JA GT50J325 PDF

    IC-50A

    Abstract: GT50J322 2-21F2C
    Text: GT50J322 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J322 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)


    Original     		GT50J322 2-21F2C 20070701-JA IC-50A GT50J322 2-21F2C PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		GT50J341 PDF

    gt50j325

    Abstract: GT50J325 Toshiba
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 gt50j325 GT50J325 Toshiba PDF

    GT50JR21

    Abstract: No abstract text available
    Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		GT50JR21 GT50JR21 PDF

    gt50j301

    Abstract: No abstract text available
    Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage


    Original     		GT50J301 2-21F2C gt50j301 PDF

    GT50J102

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.


    OCR Scan     		GT50J102 961001EAA GT50J102 PDF

    gt50j

    Abstract: No abstract text available
    Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2


    OCR Scan     		GT50J102 2-21F2C gt50j PDF

    GT50J101

    Abstract: No abstract text available
    Text: GT50J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm . High Input Impedance : tf=0.35ns Max. io -6 . . P •» < = i —r _| sl = . Low Saturation Voltage : VcE(sat)=4 .0V(Max.) ) 2.50 . Enhancement-Mode j L 'i i l 3.0 +2.5 1.0-0 .2 5 I'.AXIMUM RATINGS (Ta=25°C)


    OCR Scan     		GT50J101 GT50J101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO S H IBA GT50J301 T O S H IB A IN S U L A T E D G ATE B IP O L A R TR A N S IS T O R SILICO N N C H A N N E L IG BT GT50J301 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S Z0.5M AX. The 3rd Generation


    OCR Scan     		GT50J301 PDF

    dh 1117

    Abstract: No abstract text available
    Text: TOSHIBA GT50J322 T O S H IB A IN S U L A T E D GATE BIPO LAR T R A N SISTO R SILICO N N C H A N N E L M O S TYPE GT50J322 Unit in mm TH E 4 T H G E N E R A T IO N C U R R EN T RESO NA NCE INVERTER S W IT C H IN G A P P L IC A T IO N S • • • • FRD Included Between Emitter and Collector


    OCR Scan     		GT50J322 ic1998 dh 1117 PDF

    GT50J101

    Abstract: CP100
    Text: GT50J101 HIGH POWER S W I T C H I N G A P P L I C A T I O N S . Unit 20.5MAX High Input I m p e d an ce High Speed tf=0. 35/is Max. Low S a t u r a t i o n Vo lt a g e v C E ( s a t ) = 4 .0 V ( M a x .) in m m 0 3.3 ±0.2 Enhancement-Mode 2.5 3.0 MAXI MUM R A T I N G S


    OCR Scan     		GT50J101 35/is GT50J101 CP100 PDF