GT30 Search Results

GT30 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)

GT30 Price and Stock

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ROHM Semiconductor RGT30NS65DGC9 IGBT TRENCH FIELD 650V 30A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT30NS65DGC9	Tube	2,894		1	1 $3.86 10 $3.86 100 $3.86 1000 $1.34723 10000 $1.28875	Buy Now
Ameya Holding Limited	RGT30NS65DGC9		35		1	1 $2.9 10 $2.6 100 $2.1311 1000 $1.5465 10000 $1.5465	Buy Now
CoreStaff Co Ltd	RGT30NS65DGC9		47			1 $0.505 10 $0.492 100 $0.473 1000 $0.47 10000 $0.47	Buy Now
ROHM Semiconductor RGT30NS65DGTL IGBT TRENCH FIELD 650V 30A LPDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT30NS65DGTL	Cut Tape	978		1	1 $3.05 10 $1.98 100 $3.05 1000 $1.10886 10000 $1.10886	Buy Now
	RGT30NS65DGTL	Digi-Reel	978		1	1 $3.05 10 $1.98 100 $3.05 1000 $1.10886 10000 $1.10886	Buy Now
Mouser Electronics	RGT30NS65DGTL		852			1 $2.75 10 $1.84 100 $1.3 1000 $1.02 10000 $0.937	Buy Now
Ameya Holding Limited	RGT30NS65DGTL		925		1	1 $1.911 10 $1.7248 100 $1.3916 1000 $0.9408 10000 $0.9408	Buy Now
CoreStaff Co Ltd	RGT30NS65DGTL		1,000			1 $5 10 $1.338 100 $0.762 1000 $0.711 10000 $0.711	Buy Now
ROHM Semiconductor RGT30TM65DGC9 IGBT TRNCH FLD 650V 14A TO220NFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT30TM65DGC9	Tube	768		1	1 $2.01 10 $2.01 100 $2.01 1000 $0.62934 10000 $0.52688	Buy Now
Mouser Electronics	RGT30TM65DGC9		3,874			1 $1.42 10 $1.27 100 $1.27 1000 $1.26 10000 $1.23	Buy Now
ComSIT USA	RGT30TM65DGC9		38,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	RGT30TM65DGC9			25 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	RGT30TM65DGC9	Tube	700			1 $0.56 10 $0.515 100 $0.269 1000 $0.218 10000 $0.218	Buy Now

CoreStaff Co Ltd	RGT30TM65DGC9		1,000			1 $2.034 10 $1.668 100 $0.889 1000 $0.801 10000 $0.801	Buy Now
Toshiba America Electronic Components GT30J121(Q) IGBT 600V 30A 170W TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT30J121(Q)	Tray	137		1	1 $4.24 10 $2.793 100 $1.9737 1000 $1.525 10000 $1.525	Buy Now
Mouser Electronics	GT30J121(Q)		126			1 $3.86 10 $2.61 100 $1.87 1000 $1.52 10000 $1.52	Buy Now
Verical	GT30J121(Q)		200		200	1 - 10 - 100 - 1000 $1.0743 10000 $1.0743	Buy Now
Arrow Electronics	GT30J121(Q)		200	20 Weeks	200	1 - 10 - 100 - 1000 $1.0698 10000 $1.0698	Buy Now
EBV Elektronik	GT30J121(Q)			21 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
t-Global Technology GT30S-150-150-0.23-0 THERM PAD 150MMX150MM PINK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT30S-150-150-0.23-0	Bulk	96		1	1 $13.1 10 $12.374 100 $10.1907 1000 $9.09884 10000 $9.09884	Buy Now

Find more GT30 price and stock on Findchips.com

GT30 Datasheets (72)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-30	MCE / KDI	ATTENUATOR, PIN DIODE	Original	PDF
GT300AL-16	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
GT300AL16	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AL-20	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
GT300AL20	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AL-24	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
GT300AL24	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AL-32	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
GT300AL32	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AV70	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AV80	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT300AV90	Powerex	Asymmetrical GTO Thyristors	Scan	PDF
GT30-100-100-0.23	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT30 100X100X0.23M	Original	PDF
GT30-100-100-0.23-0	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT30 SHEET 100X100X0.23MM	Original	PDF

GT30-300-300-0.23-0	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT30 SHEET 300X300X0.23MM	Original	PDF
GT303J1K	US Sensor/Littelfuse	Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 30K OHM 10% BEAD	Original	PDF
GT305A	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT305B	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT305V	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT308A	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

GT30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GT30J341 ディスクリートIGBT シリコンNチャネルIGBT GT30J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 30 A) (3) 接合温度が高い: Tj = 175 (最大) (4)	Original	PDF	GT30J341
Untitled Abstract: No abstract text available Text: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz	Original	PDF	VS-GT300FD060N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
GT3020 Abstract: in 4436 MARK 2T X2C-BXXXXXXXXX 10MAY2010 Q2C-B2832AC2 Text: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide	Original	PDF	GT3020/X2C-BXXXXXXXXX/2T GT3020 10-May-chnical 10-May-2010 in 4436 MARK 2T X2C-BXXXXXXXXX 10MAY2010 Q2C-B2832AC2
Untitled Abstract: No abstract text available Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122
Untitled Abstract: No abstract text available Text: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)	Original	PDF	GT30J121 50kHz Tj125
GT30J101 Abstract: GT30J301 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 2-16C1C GT30J101 GT30J301
GT30J126 Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba Text: GT30J126 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	PDF	GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
GT30J101 Abstract: GT30J301 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 GT30J101 GT30J301
GT30J324 Abstract: No abstract text available Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J324 GT30J324
GT30J301 Abstract: No abstract text available Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)	Original	PDF	GT30J301 GT30J301
GT30J301 Abstract: failure report IGBT Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. z Low saturation voltage	Original	PDF	GT30J301 GT30J301 failure report IGBT
GT30J121 Abstract: GT30J324 Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121 GT30J121 GT30J324
IGBT GT30J121 Abstract: GT30J121 GT30J324 Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121 IGBT GT30J121 GT30J121 GT30J324
Untitled Abstract: No abstract text available Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)	Original	PDF	GT30J301

GT30J322 Abstract: MARKING toshiba Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage	Original	PDF	GT30J322 GT30J322 MARKING toshiba
in 4436 Abstract: GT3020 Text: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide	Original	PDF	GT3020/X2C-BXXXXXXXXX/2T GT3020 13-Apr in 4436
GT300FD060N Abstract: No abstract text available Text: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz	Original	PDF	VS-GT300FD060N E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GT300FD060N
GT30J301 Abstract: No abstract text available Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)	Original	PDF	GT30J301 GT30J301
RKM 40 Abstract: No abstract text available Text: Housing Style 30 mm - Nonembeddable, minifast Connection, Teflon Coated Part Number Ni20U-GT30-ADZ30X2-B1131 ID Number M4281822 Features Sen s Ran ing ge m m Inductive Sensors Output 20 2-Wire AC/DC Short-Circuit Protected 30 mm - Nonembeddable, Right Angle minifast Connection	Original	PDF	Ni20U-GT30-ADZ30X2-B1131 M4281822 Ni15-G30-AN6X-B1441 T4695590 Ni15-G30-AP6X-B1441 T4697000 Ni15-G30-AZ3X-B1431 T4372700 RKM 40
Untitled Abstract: No abstract text available Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage	Original	PDF	GT30J301
Untitled Abstract: No abstract text available Text: GT30 High Thermal Conductivity Glassfiber Reinforcement Features Natural tack Smooth surface & low thermal contact resistance Exceptional thermal performance at lower application pressures 20psi~400psi Usable over a wide temperture range Simplified processing and reduced operating costs	Original	PDF	20psi 400psi) D5470 D2240
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.	OCR Scan	PDF	GT30J301
Untitled Abstract: No abstract text available Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)	OCR Scan	PDF	GT30J311 30/iS
GT30J322 Abstract: No abstract text available Text: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed	OCR Scan	PDF	GT30J322 GT30J322

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GT30 Search Results

GT30 Result Highlights (1)

GT30 Price and Stock

ROHM Semiconductor RGT30NS65DGC9

ROHM Semiconductor RGT30NS65DGTL

ROHM Semiconductor RGT30TM65DGC9

Toshiba America Electronic Components GT30J121(Q)

t-Global Technology GT30S-150-150-0.23-0

GT30 Datasheets (72)

GT30 Datasheets Context Search

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GT3020

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GT30J101

GT30J126

GT30J101

GT30J324

GT30J301

GT30J301

GT30J121

IGBT GT30J121

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GT30J322

in 4436

GT300FD060N

GT30J301

RKM 40

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GT30J322