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    GT25 Price and Stock

    Samsung Electro-Mechanics CIGT252010LM1R0MNE

    FIXED IND 1UH 3.1A 50 MOHM SMD
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    Kyocera AVX Components 600S180GT250XT4K

    CAP CER 18PF 250V C0G/NP0 0603
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    DigiKey 600S180GT250XT4K Cut Tape 9,800 1
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    Kyocera AVX Components 600S360GT250XT4K

    CAP CER 36PF 250V NP0 0603
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    DigiKey 600S360GT250XT4K Cut Tape 7,622 1
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    Kyocera AVX Components 600S470GT250XT4K

    CAP CER 47PF 250V C0G/NP0 0603
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    DigiKey 600S470GT250XT4K Digi-Reel 7,247 1
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    600S470GT250XT4K Cut Tape 7,247 1
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    600S470GT250XT4K Reel 4,000 4,000
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    Kyocera AVX Components 600S120GT250XT

    CAP CER 12PF 250V C0G/NP0 0603
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    DigiKey 600S120GT250XT Cut Tape 3,906 1
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    TTI 600S120GT250XT Reel 4,500 500
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    GT25 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT-25 GlobTek SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT Original PDF
    GT-25 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT25 Thermometrics GENERAL PURPOSE SENSOR Original PDF
    GT250P10T Goford Semiconductor MOSFET P-CH 100V 56A TO-220 Original PDF
    GT-25-12 GlobTek SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT Original PDF
    GT25-12DP-2.2H Hirose Electric SMT multipin connectors; HRS No: 775-0005-4 00; No. of Positions: 12; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle Original PDF
    GT25-12DS-HU Hirose Electric Connectors, Interconnects - Rectangular Connectors - Housings - CONN HSG Original PDF
    GT25-12DS-HU/RE-MD Hirose Electric Uncategorized - Miscellaneous - TOOL ACCY Original PDF
    GT25-12DS-R Hirose Electric Connectors, Interconnects - Rectangular Connectors - Accessories - CONN RETAINER Original PDF
    GT-25-15 GlobTek SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT Original PDF
    GT25-16DP-2.2H Hirose Electric SMT multipin connectors; HRS No: 775-0006-7 00; No. of Positions: 16; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle Original PDF
    GT25-16DP-2.2V(01) Hirose Electric Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN 16POS PCB Original PDF
    GT25-2024SCF Hirose Electric SMT multipin connectors; HRS No: 775-0002-6 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact Original PDF
    GT25-2428SCF Hirose Electric SMT multipin connectors; HRS No: 775-0013-2 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact Original PDF
    GT25-2428SCF(01) Hirose Electric SMT multipin connectors; HRS No: 775-0013-2 01; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact Original PDF
    GT25-24DP-2.2H Hirose Electric SMT multipin connectors; HRS No: 775-0007-0 00; No. of Positions: 24; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle Original PDF
    GT25-24DP-2.2V(01) Hirose Electric Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN 24POS PCB Original PDF
    GT25-2630SCF Hirose Electric SMT multipin connectors; HRS No: 775-0012-0 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact Original PDF
    GT25-2630SCF(01) Hirose Electric SMT multipin connectors; HRS No: 775-0012-0 01; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact Original PDF
    GT2530 GTM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF

    GT25 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Toshiba transistor Ic 100A

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e


    OCR Scan     		GT25Q301 120IG Toshiba transistor Ic 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode


    OCR Scan     		GT25G102 2-10S2C GT25G1Q2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		GT25G101 10S2C PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s Max.


    OCR Scan     		GT25J101 PDF

    TOSHIBA IGBT DATA BOOK

    Abstract: GT25Q102 GT25Q301
    Text: GT25Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		GT25Q102 000707EAA1 TOSHIBA IGBT DATA BOOK GT25Q102 GT25Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 01 ( S M ) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 170A) Enhancement-Mode 12V Gate Drive


    OCR Scan     		GT25G101 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25C08 GT25C08 SPI 8K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,


    Original     		GT25C08 PDF

    TRANSISTOR BJ 033

    Abstract: GT25Q301
    Text: T O S H IB A GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT25Q301 TRANSISTOR BJ 033 GT25Q301 PDF

    GT25G101

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)


    Original     		GT25G101 2-10S1C GT25G101 PDF

    GT25H101

    Abstract: GT25H Opto Speed SA
    Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		15BKAX GT25H101-3 GT25H101 GT25H Opto Speed SA PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		GT25G101 2-10S1C PDF

    GT25G102

    Abstract: No abstract text available
    Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		GT25G102 2-10S1C GT25G102 PDF

    GT2531

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		GT2531 GT2531 OT-26 PDF

    GT25Q101

    Abstract: No abstract text available
    Text: GT25Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. #3.3±02 20 5MAX . High Input Impedance . High Speed tf-0.5 is(Max. . Low Saturation Voltage VcE(sat)=4.0V(Max.) <=f; . Enhancement-Mode 2.5 30 + 2.5 1.0-0.25 5.4 5±0.1 5 MAXIMUM RATINGS (Ta-25°C)


    OCR Scan     		GT25Q101 Ta-25 2-21F1C GT25Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • High Input Impedance • High Speed • Low Saturation Voltage : VGE sat = 4-0V (Max.)


    OCR Scan     		GT25Q101 2-21F1C PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		GT25G101 2-10S2C PDF

    Untitled

    Abstract: No abstract text available
    Text: GT250 grid-tie solar inverters High availability from a provider you can trust Easy to install and operate, the Schneider ElectricTM GT250 grid tie inverters automate startup, shut down and fault detection scenarios. They incorporate advanced Maximum Power Point Tracking technology to maximize the


    Original     		GT250 GT250? RS485 RS232 UL1741 DS20141002 GT250 PDF

    IGBT GT25q101

    Abstract: GT25q101 transistor gt25q101
    Text: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. • High Input Impedance • High Speed • Low Saturation Voltage : V q e


    OCR Scan     		GT25Q101 IGBT GT25q101 GT25q101 transistor gt25q101 PDF

    TRANSISTOR BJ 033

    Abstract: GT25Q301
    Text: TO SH IBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT25Q301 TRANSISTOR BJ 033 GT25Q301 PDF

    giantec

    Abstract: No abstract text available
    Text: GT25C128 Advanced GT25C128 SPI 128K Bits Serial EEPROM Copyright 2011 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,


    Original     		GT25C128 MO-153 giantec PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25C256 GT25C256 SPI 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,


    Original     		GT25C256 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E sat = 8V (Max.) (IC = 150A)


    OCR Scan     		GT25G102 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A)


    OCR Scan     		GT25G102 GT25G1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT25J102 TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=U.35//s Max. • Low Saturation Voltage


    OCR Scan     		GT25J102 35//s PDF