GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
|
Original
|
|
PDF
|
s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
|
Original
|
E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
|
PDF
|
GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
|
Original
|
BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
|
PDF
|
GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
|
Original
|
BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
|
PDF
|
GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
|
PDF
|
GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
|
PDF
|
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
|
Original
|
2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
|
PDF
|
j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
|
OCR Scan
|
O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
|
PDF
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
|
PDF
|