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    GT15 Price and Stock

    Kyocera AVX Components 100A390GT150XT

    CAP CER 39PF 150V P90 0505
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    DigiKey 100A390GT150XT Digi-Reel 2,378 1
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    100A390GT150XT Cut Tape 2,378 1
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    100A390GT150XT Reel 2,000 500
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    Richardson RFPD 100A390GT150XT 500
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    Kyocera AVX Components 100A470GT150XT1K

    CAP CER 47PF 150V P90 0505
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    DigiKey 100A470GT150XT1K Digi-Reel 1,663 1
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    100A470GT150XT1K Cut Tape 1,663 1
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    100A470GT150XT1K Reel 1,000 1,000
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    TDK Corporation VGT15SEFD-250S4A7

    XFMR FLYBACK AC/DC CONV 2.6UH SM
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    DigiKey VGT15SEFD-250S4A7 Cut Tape 747 1
    • 1 $11.53
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    VGT15SEFD-250S4A7 Digi-Reel 747 1
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    VGT15SEFD-250S4A7 Reel 450 150
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    Avnet Americas VGT15SEFD-250S4A7 Reel 150 20 Weeks 300
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    TDK Corporation VGT15EFD-200S3A6

    XFMR FLYBACK AC/DC CONV 8UH SMD
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    DigiKey VGT15EFD-200S3A6 Cut Tape 716 1
    • 1 $10.92
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    VGT15EFD-200S3A6 Digi-Reel 716 1
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    VGT15EFD-200S3A6 Reel 360 360
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    Cinch Connectivity Solutions CGT-1500-F0-24M-02

    FEMALE 2.4MM TERMINATION, 50GHZ
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    DigiKey CGT-1500-F0-24M-02 Box 62 1
    • 1 $238.95
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    • 100 $188.75
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    Find more GT15 price and stock on Findchips.com

    GT15 Datasheets (160)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT-15 Greenlee Textron Equipment - Electrical Testers, Current Probes, Test and Measurement, DETECTOR NON CONTACT Original PDF
    GT15 Thermometrics GENERAL PURPOSE SENSOR Original PDF
    GT150L105A Carlo Gavazzi Relays - Accessories - TOR LUG 150A 80-105A Original PDF
    GT150L130A Carlo Gavazzi Relays - Accessories - TOR LUG 150A 95-130A Original PDF
    GT150L150A Carlo Gavazzi Relays - Accessories - TOR LUG 150A 110-150A Original PDF
    GT150S105A Carlo Gavazzi Relays - Accessories - TOR SCREW 150A 80-105A Original PDF
    GT150S130A Carlo Gavazzi Relays - Accessories - TOR SCREW 150A 95-130A Original PDF
    GT150S150A Carlo Gavazzi Relays - Accessories - TOR SCREW 150A 110-150A Original PDF
    GT15-100-100-0.23-0 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 100X100X0.23MM Original PDF
    GT15-150-150-0.23-0 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 150X150X0.23MM Original PDF
    GT-1515RP2 Soberton Buzzers, Audio Products, BUZZER 2.73KHZ 1-2V EXT DRV PCB Original PDF
    GT-1515RP2H Soberton Buzzers, Audio Products, BUZZER 2.73KHZ 1-2V EXT DRV PCB Original PDF
    GT-1515RP3 Soberton Buzzers, Audio Products, BUZZER 3.1KHZ 1-2V EXT DRV PCB Original PDF
    GT-1515RP3H Soberton Buzzers, Audio Products, BUZZER 3.1KHZ 1-2V EXT DRV PCB Original PDF
    GT15-2024SCF(70) Hirose Electric HID head lamp valve socket; HRS No: 765-0003-1 70; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Female contact Original PDF
    GT15-2S Hirose Electric HID head lamp valve socket; HRS No: 765-0001-6 00; No. of Positions: 2; Connector Type: Wire; Contact Gender: Female; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Housing Original PDF
    GT15-2S(45) Hirose Electric HID head lamp valve socket; HRS No: 765-0001-6 45; No. of Positions: 2; Connector Type: Wire; Contact Gender: Female; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Housing Original PDF
    GT15-2S-F Hirose Electric HID head lamp valve socket; HRS No: 765-0002-9 00; No. of Positions: 2; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Accessory; Cover Original PDF
    GT153 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT15-300-300-0.23-0 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 300X300X0.23MM Original PDF
    ...

    GT15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT15Q101

    Abstract: No abstract text available
    Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL


    OCR Scan     		GT15Q101 2-16C1C GT15Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)


    OCR Scan     		GT15Q311 --100A PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA GT15J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 1 5 .9 M A X M O TO R CONTROL APPLICATIONS • • • • ;S3.2 ± 0 .2 m High Input Impedance High Speed : tf=0.35/*s Max.


    OCR Scan     		GT15J101 PDF

    GT15N101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15N101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX 02 l2±O.2 . High Input Impedance . High Speed : tf=1 *O y s M a x , . Low Saturation Voltage : V c e (s a t ) ~ 5•0 V ( M a x .)


    OCR Scan     		GT15N101 GT15N101 PDF

    TRANSISTOR 15J321

    Abstract: 15j321 RG105
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		GT15J321 TRANSISTOR 15J321 15j321 RG105 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth-generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.20 µs TYP. (IC = 15 A)


    Original     		GT15M321 2-16F1A PDF

    GT15Q301

    Abstract: No abstract text available
    Text: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.


    OCR Scan     		GT15J102 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		GT15J102 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiT iin ? n i HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 /¿s Max. Low Saturation Voltage : V q e (sat) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 PDF

    GT15Q301

    Abstract: No abstract text available
    Text: TO SH IBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 GT15Q301 PDF

    15j331

    Abstract: No abstract text available
    Text: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 µs typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)


    Original     		GT15J331 2-10HIBA 15j331 PDF

    VF50

    Abstract: No abstract text available
    Text: GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q311 2-16H1A VF50 PDF

    GT15Q301

    Abstract: No abstract text available
    Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.32 s Max. z Low saturation voltage


    Original     		GT15Q301 GT15Q301 PDF

    GT15J331

    Abstract: No abstract text available
    Text: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • The 4th Generation • Enhancement-Mode • High Speed: tf = 0.10 µs typ. • Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)


    Original     		GT15J331 GT15J331 PDF

    2-10R1C

    Abstract: GT15J321
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • The 4th generation • FS fast switching • Enhancement-mode • High speed: tf = 0.03 µs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.)


    Original     		GT15J321 2-10R1C GT15J321 PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 2-16C1C GT15Q102 GT15Q301 PDF

    toshiba Ta

    Abstract: GT15M321
    Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 µs TYP. (IC = 15 A)


    Original     		GT15M321 toshiba Ta GT15M321 PDF

    GT15M321

    Abstract: No abstract text available
    Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.20 µs TYP. (IC = 15 A) Low Saturation Voltage


    Original     		GT15M321 GT15M321 PDF

    15j301

    Abstract: transistor 15j301 GT15J301 2-10R1C
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage


    Original     		GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C PDF

    GT15J341

    Abstract: No abstract text available
    Text: GT15J341 Discrete IGBTs Silicon N-Channel IGBT GT15J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit


    Original     		GT15J341 O-220SIS GT15J341 PDF

    gt15j101

    Abstract: No abstract text available
    Text: GT15J101 TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 01 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS 1 5.9 M A X M O TO R CONTROL APPLICATIONS • • • • H igh Input Impedance H igh Speed : tf= 0 .3 5 //s Max.


    OCR Scan     		GT15J101 50//s gt15j101 PDF

    LTSG

    Abstract: gt15j101
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH GT15J101 POWER SWITCHING APPLICATIONS. U n it in nun MOTOR CONTROL A P PL IC AT IO NS. High In p u t Impedance High Speed Low S a t u r a t i o n V oltag e Enhancement-Mode 1 5 .9 MAX . 0 3 .2 ± 0 .2


    OCR Scan     		GT15J101 35fjs LTSG gt15j101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 1 5 J 1 SILICON N -CH ANN EL IGBT 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.


    OCR Scan     		GT15J102 PDF