GSTM Search Results

TSC 232 CPE

Abstract: RS -12V SDS RELAY RS -24V SDS RELAY RSL -12V SDS RELAY univac DS1 frame synchronization CMI 1990 MS NAS DC standards parts cross reference coded mark inversion 1990 mtbf slc TCP 8026
Contextual Info: Philips Semiconductors Acronyms Networking acronyms A B ATM Adaptation Layer, two sublayers concerned with segmenting large PDUs into ATM cells; type 1 = CBR, 2 = VBR. See also SAR. B Bearer channel, a DS–0 for user trafrlc. BCC Block Check Code, a CRC or similarly calculated number

telephone main distribution frame

Abstract: RJ48 pin out APDU spec mcl plp
Contextual Info: Philips Semiconductors Acronyms Networking acronyms A B ATM Adaptation Layer, two sublayers concerned with segmenting large PDUs into ATM cells; type 1 = CBR, 2 = VBR. See also SAR. B Bearer channel, a D S-0 for user trafrlc. BCC Block Check Code, a CRC or similarly calculated number

BLW79

Abstract: IEC134
Contextual Info: N AMER PHILIPS/DISCRETE bTE bfc.53^31 002cmDfl TS1 » A . t5 L W /y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applicationsin class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V . The resistance stabilization of the

mic bias circuit

Abstract: "SIDE TONE CONTROL" FORMIC Genarator tsz02201 BU7841GLU mb20n BRTT y28k
Contextual Info: Semiconductor Integrated Circuit ST R U C T U R E sem iconductor lotegrated circuit PRO D U C T PC M Voice C O D EC IC for mobile phone M O D ELN A M E BU 7 8 4 1 G LU EX T ER N A L V IEW Figure-1 BLO C K DIAGRAM F EA T U R E S BU7841GLU Extem a! View Figure-2 Block diagram

TMs 1122 NL

Abstract: GENERAL SEMICONDUCTOR ed 7ca spectrum node receiver sn 8602 CMIP Common Management Information Protocol MS NAS DC standards parts cross reference satellite beacon receiver DDS 4 wire e&m on DS1 hybrid "User Datagram Protocol" ami 8025
Contextual Info: P h ilip s S em iconductors Data Com m unications Products A cronym s Networking acronyms A AAL B ATM Adaptation Layer, two sublayers concerned with segmenting large PDUs into ATM cells; type 1 = CBR, 2 = VBR . See also SAR. B Bearer channel, a D S -0 for user trafrlc.

Contextual Info: 4GE » ROHM CO LTD 7 0 2 f l cm D O O S 1^ IRHM =1 /Transistors 2SD1720 'T - 3 3 - / I 2SÛ1720 • NPN y V 3 > iif f f l/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor ‘ • ^ Jfi^ jÉE iJ/D im en sion s Unit: mm 1) V ce ( sat) = 0 . 3 V (Typ.)

Contextual Info: 2 _ JK 9ZL6E0PS ‘ ON B & REV. DON DATE S! M NO. fi & M $[ £ m ÜÉ CHK. DR. DESCRIPTION BS & ^ APPD. APPD. ON IM V d Q £ # M g ] ±0.4 CONTACTS NO. :40, 60, 80, 100, 120 ±0.05 CONTACTS NO. :30, 50, 70

SWT-9

Abstract: s1495
Contextual Info: OUTLINE DRAWINGS You will find the SUHNER type No. which corresponds to the respective drawing number within the specifications of the respective EMP protector under "Fig.” If nothing else is mentioned all drawings are given in [mm]. Figure 1 Figure 2 Figure 3

circuito integrado 555

Abstract: manual circuitos integrados timbres integrados circuitos integrados tn750 libro sistemas digitales la 4001 LLAM QUE ES UN
Contextual Info: 555-233-712SPL Comcode 108605981 2ª edición Junio 1999 0MWXE HI GSRXVSP TEVE E»EHMV YR RYIZS YWYEVMS XIPIJºRMGS Utilice esta lista de control para asegurarse de que la información de cada usuario es completa y precisa en todas las aplicaciones de su empresa.

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