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    GSM BASE STATION Search Results

    GSM BASE STATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    GSM BASE STATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gsm signal Booster

    Abstract: gsm signal amplifier gsm Booster GSM max power diagram DML Microwave gsm power amplifiers 10 w 1702 gsm booster circuit circuit booster gsm md68
    Text: 27223 DML Microwave 4/7/01 1:51 pm Page 5 GSM P.A. 10 W BOOSTER AMPLIFIER EXTENDS POWER CAPABILITY OF GSM MICROCELL BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave Booster Amplifier increases the power capability of GSM Microcell Base Stations up to 10. The product is compact


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    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


    Original     		SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210 PDF

    A 434 RF

    Abstract: RF receiver 434 Mhz
    Text: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION


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    base station receiver GSM

    Abstract: No abstract text available
    Text: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION


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    Untitled

    Abstract: No abstract text available
    Text: QHD-2BH-0.9G QUAD HYBRID REV: 002, 09/08/04 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION


    Original     		yield-20 PDF

    DML Microwave

    Abstract: circulator MHz
    Text: GSM CIRCULATOR GENERAL INFORMATION DML Microwave’s GSM Circulators have been developed specifically to meet the technical requirements of GSM Base Stations. The designs are based on techniques well proven in high volume Cellular radio applications. The device featured is a single junction circulator with low


    Original     		FM25025 DML Microwave circulator MHz PDF

    DML Microwave

    Abstract: 1702 rf amplifier 100w rf power amplifier 100w
    Text: 27223 DML Microwave 4/7/01 1:46 pm Page 1 PCS P.A. SOLID STATE 40 W POWER AMPLIFIER FOR GSM 1800 BASE STATIONS GENERAL INFORMATION ADVANTAGES MCE DML Microwave has designed this 40W Power Amplifier for use in GSM 1800 PCS 1900 version available Base Station applications


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    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AV131-315, AV131-315LF: HIP3 Variable Attenuator for AMPS and GSM Base Stations Features 23 dB attenuation range 1.5 dB insertion loss, 1.5 SWR ● 0–12 V control voltage ● 43 dBm IP3 ● Small footprint LGA package ● Designed for AMPS and GSM base stations


    Original     		AV131-315, AV131-315LF: J-STD-020 AV131-315 PDF

    12065G105AT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A PDF

    MRF7S18125

    Abstract: J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF7S18125AH MRF7S18125AHR3 MRF7S18125AHSR3 38yees, MRF7S18125AHR3 MRF7S18125 J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35 PDF

    C5750X5R1H106M

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S18060 Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060MR1 MRF6S18060MBR1 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF6S18060 MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060MR1 MRF6S18060MBR1 C5750X5R1H106M PDF

    BGF1801-10

    Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
    Text: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for


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    MRFE6S9046GN

    Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9046GN ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H PDF

    85024A

    Abstract: No abstract text available
    Text: GSM mobile service test solutions Product overview HP 8922S option H13/14 GSM MS service test set with remote front panel interface With a rapidly increasing installed base of GSM subscribers worldwide, pressure is increasing on mobile repair organizations to optimize


    Original     		8922S H13/14 8922S 17-21/F 5964-9880E 85024A PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 A114 A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 PDF

    ATC100B470

    Abstract: ESME630E MRFE6S9130HR3 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 0, 4/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRFE6S9130H MRFE6S9130HR3 MRFE6S9130HSR3 MRFE6S9130HR3 ATC100B470 ESME630E A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H PDF

    KME63VB

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB PDF

    gsm signal amplifier

    Abstract: gsm amplifier AWG171638-1 C406506576 172165-1
    Text: m at&t Preliminary Data Sheet March 1993 Microelectronics GSM Low-Noise Amplifier Features Description • Frequency range from 890 MHz to 915 MHz AT&T’s GSM Low-Noise Amplifier was specially designed for applications in GSM base station receivers and operates in a frequency range from


    OCR Scan     		005002b 001370b C406506576 05002b gsm signal amplifier gsm amplifier AWG171638-1 C406506576 172165-1 PDF