GSM LNA
Abstract: IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
Text: IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise Amplifier
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IBM43RCLNA1115
IBM43RCLNA1115
lna1115
GSM LNA
IBM REV 2.8
gsm amplifier schematic
schematic GSM ESD
IBM REV 2.8 Circuit sheet
IBM Microelectronics
igc1
gsm amplifier circuit
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows
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AWT0908
T0908
T0908
28-pin
theAWT0908
AWT0908
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%
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CGY2013G
PCA5075
SA1620.
SCA50
647021/1200/01/pp12
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U244
Abstract: 800MHz gsm Handset Circuit Diagram block diagram for automatic room power control RF2123 schematic diagram 48v dc charger automatic room power control applications LA 7625 schematic diagram 50 VDC POWER SUPPLY 6v battery charger circuit diagram schematic diagram 48v charger
Text: RFI RF2123 MICRO-DEVICES GSM POWER AMPLIFIER T yp ica l A p plicatio ns • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment < cc Product Description .158 .150 The RF2123 is a high power, high efficiency amplifier IC.
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RF2123
RF2123
800MHz
950MHz
T004131
100pF
U244
800MHz gsm Handset Circuit Diagram
block diagram for automatic room power control
schematic diagram 48v dc charger
automatic room power control applications
LA 7625
schematic diagram 50 VDC POWER SUPPLY
6v battery charger circuit diagram
schematic diagram 48v charger
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gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
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RF5110
Abstract: RF5111 GSM900
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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RF5110
RF5110
800MHz
950MHz
203mm
330mm
025mm
RF5111
GSM900
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RF2173
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
RF2173
800MHz
950MHz
203mm
330mm
025mm
RF2173)
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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Philips LQFP MARKING CODE
Abstract: Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES
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CGY2013G
PCF5077
SA1620.
CGY2013GBE
OT313
Philips LQFP MARKING CODE
Philips LQFP PART MARKING CODE
Philips lqfp date CODE MARKING
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RF5111
Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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RF5110
RF5110
800MHz
950MHz
203mm
330mm
025mm
RF5111
GSM900
SiGe BiCMOS transistor bias block generator shunt
PFC915
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RF2173
Abstract: IPC-SM-782 RF2174 030514
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
RF2173
800MHz
950MHz
203mm
330mm
025mm
RF2173)
IPC-SM-782
RF2174
030514
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gsm transceiver
Abstract: PHILIPS databook MMIC BSR14 CGY2013G LQFP48 PHP212L SA1620 1210 pressure sensor ics
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES
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CGY2013G
CGY2013G
SCA50
437027/1200/02/pp12
gsm transceiver
PHILIPS databook MMIC
BSR14
LQFP48
PHP212L
SA1620
1210 pressure sensor ics
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c1533
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description 1 2 The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
800MHz
950MHz
36dBm.
36dBm,
c1533
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2-bit comparator
Abstract: PCF5075 SSOP20 BAS70-07
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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Dat31
SCA53
437027/1200/03/pp28
2-bit comparator
PCF5075
SSOP20
BAS70-07
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RF2123
Abstract: No abstract text available
Text: RF2123 MICRO-DEVICES GSM POWER AMPLIFIER Typical Applications • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment Product Description The RF2123 is a high power, high efficiency am plifier IC.
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RF2123
RF2123
0D00420
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smd diode schottky code marking nu
Abstract: 18Tcy diode marking BM8 18T marking
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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PCF5075
PCF5075T/F2
PCF5075TDK-T
OT266
smd diode schottky code marking nu
18Tcy
diode marking BM8
18T marking
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GSM lna
Abstract: igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet
Text: Preliminary IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise
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IBM43RCLNA1115
lna1115
GSM lna
igc1
IBM REV 2.8
ibm rev 2.1
lna gsm 900
IBM REV 2.8 Circuit sheet
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RF2138
Abstract: RF2140
Text: RF2138 2 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Portable Battery Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • Commercial and Consumer Systems Product Description The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2138
RF2138
800MHz
950MHz
36dBm.
36dBm,
RF2140
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material declaration taiyo yuden
Abstract: No abstract text available
Text: RF5110G 3V GSM POWER AMPLIFIER 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz
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RF5110G
16-Pin,
36dBm
800MHz
950MHz
150MHz/220MHz/
450MHz/865MHz/915MHz
RF5110G
2002/95/EC
DS080717
material declaration taiyo yuden
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Power Amplifier GSM
Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
Text: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave
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CGY2015
CGY2015
HVQFN16
SCA74
403506/01/pp24
Power Amplifier GSM
smd transistor A1 HB
SOT629-1
h2lb
BA891
philips rf manual
power amplifier circuit diagram with pcb layout
power amplifier handbook
schematics for a PA amplifier
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awt0904
Abstract: No abstract text available
Text: APPLICATION NOTE - AWT0904 AWT0904 Power Amplifier for G SM Phones INTRODUCTION This application note describes the use of ANADIGICS AWT0904 Single Supply, GSM Band, Power Amplifier . The AWT0904 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows
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AWT0904
AWT0904
28-pin
theAWT0904
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Untitled
Abstract: No abstract text available
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLW S060A -M AY 1998 Modulation and Upconversion from l/Q Baseband to RF on Single Chip Power Amplifier Driver Designed for GSM Portable Cellular Telephones 3.75-V Operation Internal VCO and SSB Mixer for Transmit
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TRF3520
S060A
48-Pin
900-MHz
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Untitled
Abstract: No abstract text available
Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • Quad-Band GSM/EDGE Handsets • GSM850/EGSM900/DCS/PCS Products • GSM/EDGE Transmitter Line-ups • GPRS Class 12 Compatible Products
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RF3158
GSM/EDGE/GSM850/DCS/PCS
GSM850/EGSM900/DCS/PCS
RF3158
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RF5110G
Abstract: RF5110 VA-PC 10 making 865 RF5111 2C10 C102 C113 RF5110GPCBA-410 NR3012T1R0N
Text: RF5110G 3V GSM POWER AMPLIFIER 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz
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RF5110G
150MHz/220MHz/
450MHz/865MHz/915MHz
800MHz
950MHz
36dBm
16-Pin,
B30/-0
EIA-481.
DS071026
RF5110G
RF5110
VA-PC 10
making 865
RF5111
2C10
C102
C113
RF5110GPCBA-410
NR3012T1R0N
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