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    GS 9510 Search Results

    GS 9510 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD78F9510GR-JJG-A Renesas Electronics Corporation Compact, Low-power, Low Pin-count 8-bit Microcontrollers for General Purpose Applications (Non Promotion), SSOP, /Embossed Tape Visit Renesas Electronics Corporation
    HS9-5104AEH-Q Renesas Electronics Corporation Radiation Hardened, Low Noise Quad Operational Amplifiers Visit Renesas Electronics Corporation
    HS9-5104ARH/PROTO Renesas Electronics Corporation Radiation Hardened, Low Noise Quad Operational Amplifiers Visit Renesas Electronics Corporation
    UPD78F9510GR(R)-JJG-A Renesas Electronics Corporation Compact, Low-power, Low Pin-count 8-bit Microcontrollers for General Purpose Applications (Non Promotion) Visit Renesas Electronics Corporation
    HS9-5104ARH-Q Renesas Electronics Corporation Radiation Hardened, Low Noise Quad Operational Amplifiers Visit Renesas Electronics Corporation
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    GS 9510 Price and Stock

    Samtec Inc ZW-08-08-G-S-295-103

    Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZW-08-08-G-S-295-103 180
    • 1 $1.4
    • 10 $1.4
    • 100 $0.92
    • 1000 $0.61
    • 10000 $0.51
    		Buy Now

    Samtec Inc ZW-08-09-G-S-395-105

    Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZW-08-09-G-S-395-105
    • 1 $1.57
    • 10 $1.57
    • 100 $1.03
    • 1000 $0.68
    • 10000 $0.57
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    Samtec Inc ZW-06-08-G-S-295-103

    Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZW-06-08-G-S-295-103
    • 1 $1.05
    • 10 $1.05
    • 100 $0.69
    • 1000 $0.45
    • 10000 $0.25
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    Samtec Inc ZW-10-08-G-S-295-103

    Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZW-10-08-G-S-295-103
    • 1 $1.75
    • 10 $1.75
    • 100 $1.15
    • 1000 $0.76
    • 10000 $0.41
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    Samtec Inc TW-03-04-G-S-295-100

    Board to Board & Mezzanine Connectors Flexible Surface Mount Board Stacking Header, 2.00 mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TW-03-04-G-S-295-100
    • 1 $0.92
    • 10 $0.92
    • 100 $0.59
    • 1000 $0.42
    • 10000 $0.19
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    Find more GS 9510 price and stock on Findchips.com

    GS 9510 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF3710SPBF

    Abstract: AN-994 IRF3710 IRF3710L IRF3710LPBF IRF3710S
    Text: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A


    Original     		5108A IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF AN-994 IRF3710 IRF3710L IRF3710LPBF IRF3710S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A


    Original     		5108A IRF3710SPbF IRF3710LPbF EIA-418. PDF

    IRF3710SPBF

    Abstract: AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S
    Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A


    Original     		IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. PDF

    IRF3710SPBF

    Abstract: TP1100 IRF3710LPBF IRF3710S
    Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A


    Original     		IRF3710SPbF IRF3710LPbF of626) EIA-418. TP1100 IRF3710LPBF IRF3710S PDF

    IRF3710SPBF

    Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
    Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A


    Original     		IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S PDF

    AN-994

    Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original     		IRF1010NSPbF IRF1010NLPbF EIA-418. AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted PDF

    IRF530N applications

    Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. IRF530N applications AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator PDF

    AN-994

    Abstract: IRF530N IRF530NL IRL3103L
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. AN-994 IRF530N IRF530NL IRL3103L PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!


    Original     		IRF1010NSPbF IRF1010NLPbF EIA-418. PDF

    marking code 43a

    Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original     		IRF1010NSPbF IRF1010NLPbF EIA-418. marking code 43a 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 PDF

    2N6759

    Abstract: JANTX 2n
    Text: POWER MOSFET TRANSISTORS , JTX JTXV» 400 Volt, 1.0 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		MIL-S-19500/542A 2N6759 2N6760 JANTX 2n PDF

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PHP65N06LT, PHB65N06LT T0220AB) PDF

    2N6761

    Abstract: UNITRODE TRANSISTORS SA-A
    Text: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		MIL-S-19500/542A 2N6761 UNITRODE TRANSISTORS SA-A PDF

    2N6764 JANTX

    Abstract: 2N6763 2n6764
    Text: POWER MOSFET TRANSISTORS , JTX JTXV¡¡Jgg 100 Volt, 0.055 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		MIL-S-19500/543A K1111. 2N6764 JANTX 2N6763 2n6764 PDF

    ufnd123

    Abstract: UFND120
    Text: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION


    OCR Scan     		UFND120 UFND123 ufnd123 UFND120 PDF

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		2N6758 1L-S-19500/542A 2N6758 6757 PDF

    2N6756 JAN

    Abstract: 2N6755
    Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 4 0 0 Volt, 1.8 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability UFN322 UFN323 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		UFN322 UFN323 UFN32Û UFN321 UFN322 PDF

    2N6770

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


    OCR Scan     		2N6769 2N6770 001D523 2N6770 PDF

    2N6756

    Abstract: 2N6755
    Text: UNITRODE CORP TS 9347963 UNITRODE CORP '' P O W E R M O S F E Î DE § ^ 3 4 7 ^ 3 920 T R A N S I S T O R S 10492 00104^2 0 T , JTX, JTXV ¡ ¡ ¡ g * 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power M OSFET design utilizes the most advanced technology available.


    OCR Scan     		IL-S-19500/542A 2N6756 2N6755 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRO.DE corp 9347963 U N ïT r ÔDE CORP 92D 10500 D /-3 ?-// POWER MOSFET TRANSISTORS , JTX,JTXVg « 400 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		MIL-S-19500/542A PDF

    2N6767

    Abstract: No abstract text available
    Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		supplie-1064 2N6767 2N6768 PDF

    UFNZ40

    Abstract: No abstract text available
    Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w


    OCR Scan     		UFNZ40 UFNZ42 UFNZ40, PDF