GRM1882C1H100FA Search Results

Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

2S110

Abstract: GRM188B11H102KA01D
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

mar 827

Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater