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    GP DIODE Search Results

    GP DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GP DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    spi eeprom flash programmer schematic

    Abstract: 3 phase MOTOR CONTROL ic 2X16 lcd PIN OUT LCD 1X16 40X4 LCD LCD 2x16-Bit ST6201C ST6220C ST6225C microcontroller ST7 tutorial
    Text: STMicroelectronics MICROCONTROLLER DEVELOPMENT TOOLS EPROM PROGRAMMERS EPROM Programmer Complete Gang2 ST62E2XC-EPB1) ST62E3X-EPB1) ST62E4XB-EPB1) ST62E6XB-EPB1) ST62E8X-EPB1) ST62E0X-GP/DIP ST62E0X-GP/SO ST62E10-GP/DIP ST62E10-GP/SO ST62E15-GP/DIP or /SO


    Original     		ST62E2XC-EPB1) ST62E3X-EPB1) ST62E4XB-EPB1) ST62E6XB-EPB1) ST62E8X-EPB1) ST62E0X-GP/DIP ST62E0X-GP/SO ST62E10-GP/DIP ST62E10-GP/SO ST62E15-GP/DIP spi eeprom flash programmer schematic 3 phase MOTOR CONTROL ic 2X16 lcd PIN OUT LCD 1X16 40X4 LCD LCD 2x16-Bit ST6201C ST6220C ST6225C microcontroller ST7 tutorial PDF

    igbt BSM 50 gp 120

    Abstract: igbt BSM 50 gp 60 15GP120 FP50R12KS4C 35GP120 GP120G igbt BSM 20 gp 60 igbt BSM 30 gp 60 igbt BSM 35 gp 120 fp50r12ks4
    Text: Click on outline no. Power Integrated Modules PIM Type IGBT Inverter IC R thJC A K/W VCE V T C =80 °C 600 600 600 600 600 600 600 600 1200 1200 1200 1200 1200 1200 BSM 10 GP 60 BSM 15 GP 60 BSM 20 GP 60 BSM 30 GP 60 BSM 50 GP 60G BSM 50 GP 60 BSM 75 GP 60


    Original     		BSM100GP FP15R12KS4C FP25R12KS4C FP35R12KS4C FP50R12KS4C igbt BSM 50 gp 120 igbt BSM 50 gp 60 15GP120 FP50R12KS4C 35GP120 GP120G igbt BSM 20 gp 60 igbt BSM 30 gp 60 igbt BSM 35 gp 120 fp50r12ks4 PDF

    IN4001GP

    Abstract: IN4007 IN5399GP IN5399 IN4001 Fagor GP IN-4001 IN5624 IN5627GP P600M
    Text: FAGOR ^ Rectifier Diodes - Quick Guide CURRENT VOLTAGE CASE Plastic IN 4001 GP to IN 4007 GP 1.0 A @ 7 5 °C 50 -s-1000 V DO-41 GP 10 A to GP 10 M 1.0 A @ 55°C 50 -s-1000 V DO-41 BYW 27-50 to BYW 27-1000 1,0 A @ 7 0 °C 50 -¡-1000 V D O -15 IN 5391 GP to


    OCR Scan     		P600M -s-1000 DO-41 DO-41 DO-201 IN4001GP IN4007 IN5399GP IN5399 IN4001 Fagor GP IN-4001 IN5624 IN5627GP P600M PDF

    BZY97C

    Abstract: bzy200 BZY10 BZY180 BZY120 BZY150 ZENER bzy18 BZY56 bzy100 bzy39
    Text: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.


    Original     		BZY97C10 BZY97C200 DO-41 BZY68 BZY82 BZY100 BZY120 BZY150 BZY180 BZY200 BZY97C BZY10 ZENER bzy18 BZY56 bzy39 PDF

    ZENER bzy18

    Abstract: bzy15 bzy200
    Text: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.


    Original     		BZY97C10 BZY97C200 DO-41 55Test BZY68 BZY82 BZY100 BZY120 BZY150 BZY180 ZENER bzy18 bzy15 bzy200 PDF

    GP 015 DIODE

    Abstract: M63813FP M63813GP M63813KP M63813P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current


    Original     		M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP 300mA) GP 015 DIODE M63813FP M63813GP M63813KP M63813P PDF

    M63814FP

    Abstract: M63814GP M63814KP M63814P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current


    Original     		M63814P/FP/GP/KP 300mA M63814P/FP/GP/KP 300mA) M63814FP M63814GP M63814KP M63814P PDF

    SUS410

    Abstract: analog displacement sensor for 0 to 50 mm GP-A10MI ca2t Contact Image Sensor Head Displacement Sensors eddy current GP-A10M GP-A12ML GP-A12MLI GP-A5S
    Text: SERIES High Accuracy Eddy Current Type Displacement Sensor High Accuracy Analog Sensing of Minute Displacement Outer Diameter Measurement GP-A VI Displacement Sensing Image Sensor LD LA-300 LA Collimated Beam Sensors MEASUREMENT SENSORS GP-A High Resolution 0.04% F.S.


    Original     		LA-300 GP-A14F SUS410 analog displacement sensor for 0 to 50 mm GP-A10MI ca2t Contact Image Sensor Head Displacement Sensors eddy current GP-A10M GP-A12ML GP-A12MLI GP-A5S PDF

    7500 IC 14 PIN

    Abstract: earth leakage diagram scr drive circuit diagram M54134FP inverter SCR M54133FP SCR Inverter datasheet Zener Diode 4,7v 10 z M54134GP SSOP16-P-225-0
    Text: M54134FP/GP Earth Leakage Current Detector REJ03F0030-0100Z Rev.1.0 Sep.16.2003 Description The M54134FP/GP is a semiconductor integrated circuit developed for use in high-speed earth leakage breakers incorporating functions to protect against voltage surges and inverter noise.


    Original     		M54134FP/GP REJ03F0030-0100Z M54134FP/GP 7500 IC 14 PIN earth leakage diagram scr drive circuit diagram M54134FP inverter SCR M54133FP SCR Inverter datasheet Zener Diode 4,7v 10 z M54134GP SSOP16-P-225-0 PDF

    7500 IC 14 PIN

    Abstract: scr drive circuit diagram SCR control circuit 16-pin SCR Inverter datasheet SCR PIN CONFIGURATION Zener Diode 4,7v 10 z M54133FP M54133GP SSOP16-P-225-0 Nippon capacitors
    Text: M54133FP/GP Earth Leakage Current Detector REJ03F0029-0100Z Rev.1.0 Sep.16.2003 Description The M54133FP/GP is a semiconductor integrated circuit developed for use in high-speed earth leakage breakers incorporating functions to protect against voltage surges and inverter noise.


    Original     		M54133FP/GP REJ03F0029-0100Z M54133FP/GP 7500 IC 14 PIN scr drive circuit diagram SCR control circuit 16-pin SCR Inverter datasheet SCR PIN CONFIGURATION Zener Diode 4,7v 10 z M54133FP M54133GP SSOP16-P-225-0 Nippon capacitors PDF

    Industrial Power

    Abstract: No abstract text available
    Text: MR5001GN/GP-MR5007GN/GP 1/2" Press-fit Industrial Power Glass Passivation Diodes 特征 MR FEATURES .底成本. Low cost .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability .设计应用于机动车上. Designed for automotive applications


    Original     		MR5001GN/GP-MR5007GN/GP MIL-STD-202, MR5001GN/GP MR5007GN/GP Industrial Power PDF

    D024

    Abstract: 32P2U M66010FP/GP
    Text: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66010FP/GP M66010FP/GP 24-BIT I/O EXPANDER 24-BIT I/O EXPANDER DESCRIPTION M66010 Semiconductor Integrated Circuit inputs 24-bit data in series and outputs it in parallel and vice versa, using shift


    Original     		M66010FP/GP 24-BIT M66010 D024 32P2U M66010FP/GP PDF

    Untitled

    Abstract: No abstract text available
    Text: MR3501GN/GP-MR3507GN/GP 1/2" Press-fit Industrial Power Glass Passivation Diodes 特征 MR FEATURES .底成本. Low cost .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability .设计应用于机动车上. Designed for automotive applications


    Original     		MR3501GN/GP-MR3507GN/GP MIL-STD-202, MR3501GN/GP MR3507GN/GP PDF

    Untitled

    Abstract: No abstract text available
    Text: MR2501GN/GP-MR2507GN/GP 1/2" Press-fit Industrial Power Diodes 特征 MR FEATURES .底成本. Low cost .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability .设计应用于机动车上. Designed for automotive applications


    Original     		MR2501GN/GP-MR2507GN/GP MIL-STD-202, MR2501GP/GN MR2507GP/GN PDF

    DS70571

    Abstract: dsPIC33e family Reference Manual dc 12v to ac 220v simple inverter circuit schema DSPIC33EP512MU810 ieee embedded system projects free DS70356 DS70609 control 220V using Parallel port Fuses class H dspic33ep256mu806
    Text: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-bit Microcontrollers and Digital Signal Controllers (up to 512 KB Flash and 52 KB SRAM) with High-Speed PWM, USB, and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture


    Original     		dsPIC33EPXXX PIC24EPXXX 16-bit 32-bit dsPIC33E/PIC24E DS70616F-page DS70571 dsPIC33e family Reference Manual dc 12v to ac 220v simple inverter circuit schema DSPIC33EP512MU810 ieee embedded system projects free DS70356 DS70609 control 220V using Parallel port Fuses class H dspic33ep256mu806 PDF

    70616G

    Abstract: dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616
    Text: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-Bit Microcontrollers and Digital Signal Controllers with High-Speed PWM, USB and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS


    Original     		dsPIC33EPXXX PIC24EPXXX 16-Bit 32-bit dsPIC33E/PIC24E DS70616G-page 70616G dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616 PDF

    220vac relay

    Abstract: agastat GP agastat* GPD relays agastat AGASTAT RELAY solenoid coils to make electromagnet 220VAC to 12VDC 10A circuit diagram CR0002 yoke coil diagram agastat 70
    Text: Catalog 1308242 Issued 3-03 AGASTAT GP/ML/TR series 10 Amp Control Relay Non-latching, Latching & Timing Versions File E15631 SERIES GP SERIES TR File LR29186 Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent


    Original     		E15631 LR29186 extr133 CR0001 CR0002 CR0155 CR0095 CR0190 CR0179 220vac relay agastat GP agastat* GPD relays agastat AGASTAT RELAY solenoid coils to make electromagnet 220VAC to 12VDC 10A circuit diagram CR0002 yoke coil diagram agastat 70 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP PDF

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


    OCR Scan     		3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r PDF

    M63814FP

    Abstract: M63814GP M63814KP M63814P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		M63814P/FP/GP/KP 300mA M63814P/FP/GP/KP M63814FP M63814GP M63814KP M63814P PDF

    GP 015 DIODE

    Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP GP 015 DIODE GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P PDF

    MC101

    Abstract: No abstract text available
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F Code60-4-227-8870 MC101 PDF

    DS70207

    Abstract: DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-bit Digital Signal Controllers (up to 32 KB Flash and 2 KB SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		dsPIC33FJ16 dsPIC33FJ32 16-bit 10-bit, 18-pin 44-pin dsPIC33F 40-bit d8-366 DS70207 DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644 PDF

    example dsPIC33fj16

    Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F 40-Bit example dsPIC33fj16 DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD PDF