Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GP 2 BJT Search Results

    GP 2 BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    OPA2863DGKEVM Texas Instruments Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp Visit Texas Instruments
    P3LP-157L Coilcraft Inc Low Pass Filter, 150MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P3LP-604L Coilcraft Inc Low Pass Filter, 0.6MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P7LP-155L Coilcraft Inc Low Pass Filter, 1.5MHz, ROHS COMPLIANT PACKAGE-9 Visit Coilcraft Inc

    GP 2 BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    RSMRST

    Abstract: ICH2 82801BA PCA9504A PCA9504ADGG SW00578
    Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product specification Supersedes data of 2000 Jul 25 Philips Semiconductors 2000 Aug 16 Philips Semiconductors Product specification Glue chip 4 PCA9504A FEATURES PIN CONFIGURATION • Dual, Strapping, Selectable Feature Sets


    Original     		PDF PCA9504A RSMRST ICH2 82801BA PCA9504A PCA9504ADGG SW00578

    INTEL 845 MOTHERBOARD CIRCUIT diagram

    Abstract: PC 845 MOTHERBOARD CIRCUIT diagram ICH2 intel 845 MOTHERBOARD CIRCUIT 82801BA JESD22-A114 JESD78 PCA9504A PCA9504ADGG ICH2-A20M
    Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2000 Aug 16 Philips Semiconductors 2002 Mar 28 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on


    Original     		PDF PCA9504A PCA9504A INTEL 845 MOTHERBOARD CIRCUIT diagram PC 845 MOTHERBOARD CIRCUIT diagram ICH2 intel 845 MOTHERBOARD CIRCUIT 82801BA JESD22-A114 JESD78 PCA9504ADGG ICH2-A20M

    845 MOTHERBOARD CIRCUIT diagram

    Abstract: RSMRST SW00582 PCA9504A SW00580
    Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2003 Mar 28 Philips Semiconductors 2003 Nov 10 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on


    Original     		PDF PCA9504A PCA9504A 845 MOTHERBOARD CIRCUIT diagram RSMRST SW00582 SW00580

    PCA9504ADGG

    Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram ICH2 82801BA JESD22-A114 JESD78 PCA9504A TSSOP56 845 MOTHERBOARD CIRCUIT diagram
    Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2003 Nov 10 Philips Semiconductors 2004 May 11 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on


    Original     		PDF PCA9504A PCA9504A PCA9504ADGG INTEL 845 MOTHERBOARD CIRCUIT diagram ICH2 82801BA JESD22-A114 JESD78 TSSOP56 845 MOTHERBOARD CIRCUIT diagram

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    transistor gl 1117

    Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019

    transistor T1J

    Abstract: NEC 9319 bjt npn
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn

    BF 3027

    Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20

    TLE6240

    Abstract: TLE 6220 GP TLE6240GP spi transistor INJECTOR 6220 hybrid regulator controller ic automotive injector powertrain controller three phase SCR gate drive circuit VHDL-AMS
    Text: Multi Domain Behavioral Models of Smart-Power ICs for Design Integration in Automotive Applications Dieter Metzner, Jürgen Schäfer, Chihao Xu Infineon Technologies AG P.O. Box 800949 , D-81609 München, Germany dieter.metzner@infineon.com, juergen.schaefer@infineon.com , chihao.xu@infineon.com


    Original     		PDF D-81609 TLE6240 TLE 6220 GP TLE6240GP spi transistor INJECTOR 6220 hybrid regulator controller ic automotive injector powertrain controller three phase SCR gate drive circuit VHDL-AMS

    ADSP21532

    Abstract: ADSP-21532
    Text: PRELIMINARY TECHNICAL DATA a t ADSP-21532 Preliminary Technical Data FEATURES 300 MHz High-Performance MSA DSP Core Two 16-Bit MACs, Two 40-Bit ALUs, Four 8-Bit Video ALUs, 40-Bit Shifter RISC-Like Register and Instruction Model for Ease of Programming and Compiler-Friendly Support


    Original     		PDF ADSP-21532 16-Bit 40-Bit 160-Lead Managem15 ADSP-21532SBCA-300 ADSP21532 ADSP-21532

    Large-signal Modeling of SiGe HBT for PA Applications

    Abstract: No abstract text available
    Text: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan


    Original     		PDF

    FQPF8N60C equivalent

    Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent
    Text: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as


    Original     		PDF

    SUF-8533SR

    Abstract: pHEMT operating junction temperature DS110718
    Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 DS110718 SUF-8533SB SUF-8533SQ SUF-8533SR SUF-8533TR7 pHEMT operating junction temperature DS110718

    SUF-8533

    Abstract: gp bjt
    Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 EDS-106168 SUF-8533PCBA-410 gp bjt

    Untitled

    Abstract: No abstract text available
    Text: Blackfin Dual Core Embedded Processor ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 FEATURES MEMORY Dual-core symmetric high-performance Blackfin processor, up to 500 MHz per core Each core contains two 16-bit MACs, two 40-bit ALUs, and a 40-bit barrel shifter


    Original     		PDF SP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 16-bit 40-bit 349-ball

    mobile rf power amplifier transistor

    Abstract: RF3931 GaN amplifier
    Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features       Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB


    Original     		PDF RF3931 EAR99 RF3931 DS091021 mobile rf power amplifier transistor GaN amplifier

    Untitled

    Abstract: No abstract text available
    Text: SUF-8500 SUF-8500DC to 10 GHz, Cascadable pHEMT MMIC Amplifier DC to 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-8500 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self biased direct coupled topology provides exceptional cascadable performance from DC - 10 GHz. Its efficient operation


    Original     		PDF SUF-8500 SUF-8500DC SUF-8500 EDS-105932 SGA-8311Z

    Untitled

    Abstract: No abstract text available
    Text: FDC37C68X s n is c STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O Controller with GPI/O FEATURES • • • • • • • 5 Volt Operation PC97 Compliant SMI Support Intelligent Auto Power Management 2.88MB Super I/O Floppy Disk Controller


    OCR Scan     		PDF FDC37C68X 82077AA FDC37C68X

    tl071 tl081

    Abstract: ad517jh AD7546KN AD7546 AP-754 DB15-DBC jsw 06 WE MQH 200 ad746 ISA S20
    Text: JUL 31 ’00 09=37 FR SPC TECHNOLOGY u/^x/^uu rAA öl aoi 773 907 5180 TO 9011441132794449 P.02/11 aumJKi ««1002 a u i -iüo ü <9 3» 3 5 2 c M' CMOS 16-Blt Voltage Out DAC* ANALOG ► DEVICES AD7546 FEATURES AD7546 FUNCTIONAL BLOCK DIAGRAM Monotonie to 16 Bits Over Tempersture


    OCR Scan     		PDF 16-Bit AD7546 AD7546 12-bit 14-Lcad 16-Lead 20-Lead tl071 tl081 ad517jh AD7546KN AP-754 DB15-DBC jsw 06 WE MQH 200 ad746 ISA S20