1SS133 T77
Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T77
diode T-77
1SS133
1SS133 T-77
T-77
diode T77
t 77
do-34 rohm
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1SS133 T-77
Abstract: No abstract text available
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T-77
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1SS133
Abstract: do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133
do-34 rohm
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1SS133
Abstract: 29010
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1/10IR
1SS133
29010
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1SS133
Abstract: diode 1ss133
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1SS133
diode 1ss133
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1SS133
Abstract: No abstract text available
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1SS133
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125OC
Abstract: FDLL3595 FDLL4148 semiconductor band color code
Text: FDLL3595 General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Cathode Band ORANGE YELLOW Placement of the Expansion Gap has no relationship to
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FDLL3595
LL-34
125OC
FDLL3595
FDLL4148
semiconductor band color code
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Untitled
Abstract: No abstract text available
Text: FDLL3595 General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Cathode Band ORANGE YELLOW Placement of the Expansion Gap has no relationship to
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FDLL3595
LL-34
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DFG3A4
Abstract: DFG3A1 DFG3A HITACHI hitachi Black FAST RECOVERY DIODE
Text: FAST RECOVERY DIODE DFG3A FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. (100V) (200V) (400V) Cathode band 7MAX (0.28) Yellow Black Blue 28MIN. (1.1) DFG3A1 DFG3A2
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28MIN.
62MIN.
DFG3A4
DFG3A1
DFG3A HITACHI
hitachi Black FAST RECOVERY DIODE
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Untitled
Abstract: No abstract text available
Text: CONTROLLED AVALANCHE DIODE U17 FEATURES OUTLINE DRAWING φ 5 MAX 0.2 • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) U17B(100V) U17C(200V) U17D(300V) U17E(400V) Yellow Black Purple Blue Cathode band
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28MIN.
62MIN.
PDE-U17-0
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DDG1C10
Abstract: DDG1C13 DDG1C HITACHI Hitachi DSA0047
Text: FAST RECOVERY DIODE DDG1C FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. DDG1C10 (1000V) DDG1C13 (1300V) Yellow Black Cathode band Symbol(Red) Color of cathode band
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DDG1C10
DDG1C13
28MIN.
62MIN.
DDG1C10
DDG1C13
DDG1C HITACHI
Hitachi DSA0047
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DFG3A2
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFG3A FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. (100V) (200V) (400V) Cathode band 7MAX (0.28) Yellow Black Blue 28MIN. (1.1) DFG3A1 DFG3A2
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62MIN.
28MIN.
DFG3A2
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U17E
Abstract: U17C U17B U17D Semiconductor u17 hitachi U17 U17 HITACHI Hitachi DSA00515
Text: CONTROLLED AVALANCHE DIODE U17 FEATURES OUTLINE DRAWING φ 5 MAX 0.2 • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) U17B(100V) U17C(200V) U17D(300V) U17E(400V) Yellow Black Purple Blue Cathode band
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28MIN.
62MIN.
U17E
U17C
U17B
U17D
Semiconductor u17
hitachi U17
U17 HITACHI
Hitachi DSA00515
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DFG3A4
Abstract: DFG3A1 Hitachi DSA0047
Text: FAST RECOVERY DIODE DFG3A FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. (100V) (200V) (400V) Cathode band 7MAX (0.28) Yellow Black Blue 28MIN. (1.1) DFG3A1 DFG3A2
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28MIN.
62MIN.
DFG3A4
DFG3A1
Hitachi DSA0047
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U17C
Abstract: U17E U17B U17D hitachi U17
Text: CONTROLLED AVALANCHE DIODE U17 FEATURES OUTLINE DRAWING φ 5 MAX 0.2 • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) U17B(100V) U17C(200V) U17D(300V) U17E(400V) Yellow Black Purple Blue Cathode band
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28MIN.
62MIN.
U17C
U17E
U17B
U17D
hitachi U17
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE U07 FEATURES OUTLINE DRAWING φ 5 MAX 0.2 • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) Green Yellow Black Red Cathode band 7MAX (0.28) 28MIN. (1.1) U07J (800V) U07L (1000V) U07M (1300V)
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62MIN.
28MIN.
PDE-U07-0
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U07L
Abstract: U07J U07M U07N Hitachi DSA00513
Text: FAST RECOVERY DIODE U07 FEATURES OUTLINE DRAWING φ 5 MAX 0.2 • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) Green Yellow Black Red Cathode band 7MAX (0.28) 28MIN. (1.1) U07J (800V) U07L (1000V) U07M (1300V)
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28MIN.
62MIN.
U07L
U07J
U07M
U07N
Hitachi DSA00513
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U07N
Abstract: U07J U07L U07M
Text: FAST RECOVERY DIODE U07 OUTLINE DRAWING φ 5 MAX 0.2 • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. Unit in mm(inch) Green Yellow Black Red Cathode band 7MAX (0.28) 28MIN. (1.1) U07J (800V) U07L (1000V) U07M (1300V)
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28MIN.
62MIN.
U07N
U07J
U07L
U07M
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Untitled
Abstract: No abstract text available
Text: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 MA4SW210B-1 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation
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MA4SW210B-1
MA4SW310B-1
MA4SW210B-1
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MA4SW310B-1
Abstract: MA4SW210B-1 MA4SW
Text: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 MA4SW210B-1 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation
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MA4SW210B-1
MA4SW310B-1
MA4SW210B-1
MA4SW310B-1
MA4SW
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Untitled
Abstract: No abstract text available
Text: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network MA4SW210B-1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation
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MA4SW210B-1
MA4SW310B-1
MA4SW210B-1
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MA4SW210B-1
Abstract: MA4SW310B-1 MA4SW210 SN62 PB36 ag2 210B1 MA4SW
Text: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network RoHS Compliant MA4SW210B-1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation
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MA4SW210B-1
MA4SW310B-1
MA4SW210B-1
MA4SW310B-1
MA4SW210
SN62 PB36 ag2
210B1
MA4SW
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MASW-002102-13580
Abstract: No abstract text available
Text: MASW-002102-13580 MASW-003102-13590 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ RoHS Compliant M/A-COM Products MASW-002102-13580 Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network
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MASW-002102-13580
MASW-003102-13590
MASW-002102-13580
MASW-003102-13590
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MASW-002102-13580
Abstract: B 1359 MA8020
Text: MASW-002102-13580 MASW-003102-13590 HMIC Silicon PIN Diode Switches with Integrated Bias Network Rev. V4 MASW-002102-13580 Features • Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network
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MASW-002102-13580
MASW-003102-13590
MASW-002102-13580
B 1359
MA8020
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