GK TRANSISTOR 42 Search Results

Contextual Info: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: TO SH IBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 Í Q MAY GK 7 + (1 ?

GK transistor 42

Abstract: transistor FET cd 332 m
Contextual Info: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G

Transistor GK 0.9

Abstract: GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X
Contextual Info: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS

br101

Contextual Info: N AMER PHILIPS/DISCRETE b^E » b b S B 'O l ;_ QDE7621 234 APX BR101 l SILIC O N C O N T R O L L E D SW IT C H The BR101 is a planar p-n-p-n switch in a TO -72 metal envelope, intended for time base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/

4302NG

Abstract: Magnus BMR ericsson
Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659

photo transistor application

Abstract: pair of led and photo transistor oki oc340 AN/npn photo transistor
Contextual Info: - ♦PRODUCT o v e r v ie w # PHOTO COUPLING DEVICES PHOTO COUPLERS APPLICATION NOTES 1. General Description By coupling a light emitting element and a light sensing element, a single-function element

gk 106

Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
Contextual Info: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707

s41 hall sensor

Abstract: Russian diode Transistor ML614S IC6001 FP99
Contextual Info: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM

Contextual Info: SAMSUNG ELECTRONICS INC MEE D MPSA92/93 Bl 7 U 4 1 4 2 000=1070 0 H S M G K PNP EPITAXIAL SILICON TRANSISTOR -T -Z 7 -1 S HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage r MPSA92 : MPSA93 Collector-Emitter Voltage: MPSA92

distance measure ultrasonic transducer

Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor
Contextual Info: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52

Ericsson GM 12

Abstract: Ericsson GM 22 4302NG Ericsson reference manual GK transistor ericsson BMR 610 45 Ericsson AIR ericsson BMR 610 TP1 Thermal protection P1 TRANSISTOR
Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659

BR101

Abstract: transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE D • ^53=131 DDE7&EL 23H BR101 I SILICON CONTROLLED SWITCH The 8R 101 is a planar p-n-p-n switch in a T O -72 metal envelope, intended fo r tim e base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/

led phototransistor pair

Abstract: toco Phototransistor til 81
Contextual Info: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor

pin configuration transistor bd140

Abstract: 1N4007 L3234 L3235N STLC5046 STLC5048 TQFP44 V100 CR injector driver MJE350 equivalent
Contextual Info: L3234 L3235N  HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED

CR injector driver

Abstract: TQFP44 package 1N4007 L3234 L3235N MJE350 STLC5046 STLC5048 TQFP44 V100
Contextual Info: L3234 L3235N HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED

long range Phototransistor Detector 880nm

Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate optocoupler with schmitt trigger input h11c optocoupler Silicon bilateral switch phototransistor ultraviolet
Contextual Info: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SY S T E M S Light, Irradiance and Effectiveness When the word “ light” is used in this discussion instead of “ electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

Contextual Info: MG200Q1ZS40 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. C H O PPER A PPLIC A TIO N S. • • • • • High Input Impedance High Speed : tf=0.5,-/s Max. trr = 0.5,i/s (Max.) Low Saturation Voltage ; VCE (sat) = 4-0v (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

2SK2744

Abstract: SC-65
Contextual Info: TOSHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 Í Q MAY

AN549

Abstract: AN9607 HC4P5524-9 HC-5524 HC9P5524-5
Contextual Info: HC-5524 Data Sheet February 1999 File Number 2798.6 EIA/ITU 24V PABX SLIC with 25mA Loop Feed Features The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI

Contextual Info: HC-5524 Data Sheet [ /Title HC5524 /Subject (EIA/I TU 24V PABX SLIC with 25mA Loop F eed) /Autho r () /Keywords (Intersil Corporation, PRIS M, Wireless Communications , RF, Radio Frequency , IF, Intermediate Frequency February 1999 File Number 2798.6 EIA/ITU 24V PABX SLIC with 25mA

TRANSISTOR GK 66 smd

Contextual Info: HC-5509B Data Sheet [ /Title HC5509B /Subject (ITU CO/Lo op Carrier SLIC) /Autho r () /Keywords (Intersil Corporation, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Local Loop, PBX, Private Branch Exchan ge, NT1+, July 1998 File Number 2799.6

TRANSISTOR GK 66 smd

Abstract: TRANSISTOR GKD smd 12v ballast ic HC4P5509B AN549 AN9607 HC-5509B TRANSFORMER ERL 35 GKD transistor
Contextual Info: HC-5509B Data Sheet July 1998 File Number 2799.6 ITU CO/Loop Carrier SLIC Features The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI