GK TRANSISTOR Search Results

Contextual Info: TO SH IBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 Í Q MAY GK 7 + (1 ?

Contextual Info: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

SP3467QDB

Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.

TCA940N

Contextual Info: SGS-THOMSON ^ 7 # . ^]D gK(Q iLi(gir^(Q)^D(gi TDA1908 8W AUDIO AMPLIFIER The TDA1908 is a m onolithic integrated circuit in 12 lead quad in-line plastic package intended for low frequency power applications. The mounting is compatible w ith the old types TBA800, TBA810S, TCA830S and TCA940N.

Contextual Info: MICROCOUPLERS FOR HYBRID CIRCUITS m M C 0 2 2, M C 0 3 5, M C 074 n OPTOELECTRONIC PRODUCTS DIVISION FEATURES gk . • Variety of output circuits • Small size saves real estate • Guaranteed performance over full military tem­ perature range • Large thick film gold bonding pads

GK transistor 42

Abstract: transistor FET cd 332 m
Contextual Info: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G

Contextual Info: / I T S C S -1H 0 M S 0 N ^ 7 1 , [10 gK [l[L[I(gîœMÔ©i L6201 0.3Q DMOS FULL BRIDGE DRIVER ADVANCE DATA to 48V and e ffic ie n tly at high sw itching speeds. A ll the logic inputs are T T L , CMOS and fjtC com patible. Each channel (half-bridge o f the

Dow Corning TC 1996

Abstract: 02e5 TCA 345 STM961-15
Contextual Info: _ _ S C S - T H O M S O N k7#s, M gK i[L[I(gïrCMDiES STM961-15 RF POWER MODULE DIGITAL CELLULAR APPLICATIONS L IN E A R PO W ER A M P L IF IE R 9 1 5 -9 6 0 MHz 26 V O LTS IN P U T /O U T P U T 50 OHM S P o u t = 4 2 dBm CW o r P E P G AIN = 30 dB PIN C O N N E C T IO N

Diode LT 432

Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

IC ST 201A

Abstract: avalanche transistors GA201 B200A
Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATURES DESCRIPTION • • • • • The Unitrode N anosecond Thyristor Switch com bines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SC R s. With

h11cx

Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

h11cx

Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

Transistor GK 0.9

Abstract: GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X
Contextual Info: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS

B897

Contextual Info: Optoisolator Specifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES LIMÊTERS N. WIN MAX MAX 8 38 B 89 7 G2 REF 8 64 T h e H I 1C 1, H I 1C 2 a n d H I 1C3 a re g alliu m a rs e n id e , in fra r e d e m ittin g d io d e s co u p le d w ith lig h t activ ated s ilic o n c o n tro lle d

4302NG

Abstract: Magnus BMR ericsson
Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659

Contextual Info: TISP61CAP3 PROGRAMMABLE OVERVOLTAGE PROTECTOR C o p y rig h t 1997, Power Innovations Limited, UK SEPTEM BER 1994 - REVISED SEPTEM BER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • Programmable Voltage Triggered SCR with high Holding Current • Transistor Buffered Inputs for Low

st GK 12

Abstract: BY2202
Contextual Info: SCRs G A IO O Nuclear Radiation Resistant, Planar G A 1 0 2 FEATURES • Optimized for Radiation Resistance • Ful ly Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter

br101

Abstract: GK transistor 72
Contextual Info: BR101 J V_ SILICON CONTROLLED SWITCH The BR101 is a planar p-n-p-n sw itch in a TO -72 m etal package, intended fo r tim e base circ u its and o th e r television applications. It is also suitable as trigger device fo r th y ris to rs . It is an integrated p-n-p/

Contextual Info: Transistors SMD Type Product specification 2SD1615 Features World Standard Miniature Package. Low VCE sat VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V

B589

Contextual Info: KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AM PLIFIER TRAN SISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t Characteristic Collector-Base Voltage Colleclor-Emitter Vottage Emitter-Base Voltage Collector Current Collector Dissipation (T*=25t;) Derate above 2 5 t

GK 243

Abstract: MPEH
Contextual Info: Optotsolator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN WAX MIN MAX T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e s c o u p le d w ith lig h t a ctiv ate d silic o n

transistor smd marking gk

Abstract: GK marking SMD transistor GK transistor marking gk 2SD1615 transistor smd marking gm
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1615 Features World Standard Miniature Package. Low VCE sat VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

AT3904

Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
Contextual Info: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches